Piezoelectric laminate, method of manufacturing the piezoelectric laminate and piezoelectric device
US-2020028066-A1 · Jan 23, 2020 · US
Piezoelectric stack method of manufacturing piezoelectric stack, and piezoelectric element
US2021036214A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021036214-A1 |
| Application number | US-202016942815-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 30, 2020 |
| Priority date | Aug 2, 2019 |
| Publication date | Feb 4, 2021 |
| Grant date | — |
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Abstract
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There is provided a piezoelectric stack, including: a substrate; an electrode film; and a piezoelectric film which is comprised of alkali niobium oxide of a perovskite structure represented by a composition formula of (K1-xNax)NbO3 (0<x<1), wherein the piezoelectric film comprises crystals having a grain size with a standard deviation of more than 0.42 μm.
First claim
Opening claim text (preview).
What is claimed is: 1 . A piezoelectric stack, comprising: a substrate; an electrode film; and a piezoelectric film which is comprised of alkali niobium oxide of a perovskite structure represented by a composition formula of (K 1-x Na x )NbO 3 (0<x<1), wherein the piezoelectric film comprises crystals having a grain size with a standard deviation of more than 0.42 μm. 2 . The piezoelectric stack according to claim 1 , wherein the piezoelectric film has an etching rate of 0.1 μm/min or more, when etching using an etching solution obtained by mixing ethylenediaminetetraacetic acid as a chelating gent of 5 g and 0.1 M or less, 37 mL of ammonia water with an ammonia concentration of 29%, and 125 mL of hydrogen peroxide water with a concentration of 30%. 3 . The piezoelectric stack according to claim 1 , wherein the piezoelectric film contains a metallic element selected from a group consisting of Cu and Mn at a concentration of 0.2 at % or more and 2.0 at % or less. 4 . The piezoelectric stack according to claim 1 , wherein the piezoelectric film comprises the crystals having an average grain size of more than 1.0 μm and 5 μm or less. 5 . A method of manufacturing a piezoelectric stack, comprising: forming an electrode film on a substrate; and forming a piezoelectric film on the electrode film, the piezoelectric film being comprised of alkali niobium oxide of a perovskite structure represented by a composition formula of (K 1-x Na x )NbO 3 (0<x<1), wherein in the formation of the piezoelectric film, an initial deposition rate is slower than a latter deposition rate. 6 . A piezoelectric element, comprising: a substrate; a bottom electrode film formed on the substrate; a piezoelectric film formed on the bottom electrode film, and comprised of alkali niobium oxide of a perovskite structure represented by a composition formula of (K 1-x Na x )NbO 3 (0<x<1); a top electrode film formed on the piezoelectric film, wherein the piezoelectric film comprises crystals having a grain size with a standard deviation of more than 0.42 μm.
Assignees
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Classifications
Electricity · mapped topic
- H01L41/1873Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US2021036214A1 cover?
- There is provided a piezoelectric stack, including: a substrate; an electrode film; and a piezoelectric film which is comprised of alkali niobium oxide of a perovskite structure represented by a composition formula of (K1-xNax)NbO3 (0<x<1), wherein the piezoelectric film comprises crystals having a grain size with a standard deviation of more than 0.42 μm.
- Who is the assignee on this patent?
- Sumitomo Chemical Co
- What technology area does this patent fall under?
- Primary CPC classification H01L41/1873. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Feb 04 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).