Monitoring device for cryogenic device

US2020411217A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2020411217-A1
Application numberUS-201916965793-A
CountryUS
Kind codeA1
Filing dateJan 30, 2019
Priority dateJan 30, 2018
Publication dateDec 31, 2020
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A monitoring device for use in a cryogenic system. The monitoring device comprises first (201) and second (202) conducting elements and a current detector (205). The first conducting element comprises high temperature superconducting, HTS, material and is configured for connection to a current source (203) and insertion into the cryogenic system. The second conducting element comprises HTS material and is connected in parallel to the first conducting element by first and second joints (204). The current detector is configured to detect a current in the second conducting element. When the HTS material in each of the first and second conducting elements is in a superconducting state, the resistance, RT, of the first conducting element between the first and second joints, is less than the sum, RB, of the resistance of the second conducting element between the first and second joints and the resistances of the first and second joints, RT<RB.

First claim

Opening claim text (preview).

1 . A monitoring device for use in a superconducting or cryogenic system, the monitoring device comprising: a first conducting element comprising high temperature superconducting, HTS, material and configured for connection to a current source and insertion into the superconducting or cryogenic system; a second conducting element comprising HTS material and connected in parallel to the first conducting element by first and second joints; and a current detector configured to detect a current in the second conducting element; wherein, when the HTS material in each of the first and second conducting elements is in a superconducting state, the resistance, R T , of the first conducting element between the first and second joints, is less than the sum, R B , of the resistance of the second conducting element between the first and second joints and the resistances of the first and second joints, R T <R B . 2 . A monitoring device according to claim 1 , wherein the first and/or second conducting elements are arranged as one or more pairs of parallel elements, with the elements of each pair being adjacent to each other and configured to carry current in opposite directions. 3 . A monitoring device according to claim 1 , wherein the current detector comprises one or more of: a conductive loop around the second conducting element; a magnetic field detector; a Hall probe; and a strain gauge coupled to two sections of the second conducting element which carry current in different directions. 4 . A monitoring device according to claim 1 , and comprising a current source configured to provide a current to the first conducting element. 5 . A monitoring device according to claim 4 , wherein the current source is modulated to as to provide a periodic time-varying current. 6 . A monitoring device according to claim 5 , wherein the current detector comprises a phase sensitive detector. 7 . A monitoring device according to claim 5 , wherein the current detector is configured to measure a duty cycle of the current in the second conducting element. 8 . A monitoring device according to claim 4 , wherein the current source is configured to provide a peak current of at least 80% of the critical current of a part of the HTS material of the first conducting element during normal operation of the superconducting cryogenic system. 9 . A monitoring device according to claim 1 , wherein the first and/or second conducting element comprise HTS tape having an HTS layer. 10 . A monitoring device according to claim 9 , wherein a width of the HTS layer varies within the section of the first conducting element between the joints. 11 . A monitoring device according to claim 9 , wherein the HTS layer is divided into a plurality of strips connected in series. 12 . A monitoring device according to claim 1 , wherein the current detector is enclosed in a magnetic shield. 13 . A monitoring device according to claim 12 , wherein the magnetic shield comprises a bulk superconductor. 14 . A monitoring device according to claim 1 , and comprising a third conducting element comprising HTS material and connected in parallel to the first conducting element by third and fourth joints, wherein, when the HTS material in each of the first, second and third conducting elements is in a superconducting state, the resistance, R T , of the first conducting element between the first and second joints, is less than the sum, R B2 , of the resistance of the third conducting element between the third and fourth joints and the resistances of the third and fourth joints, and the sum, R B2 , of the resistance of the third conducting element between the third and fourth joints and the resistances of the third and fourth joints is less than the sum, R B , of the resistance of the second conducting element between the first and second joints and the resistances of the first and second joints R T <R B2 <R B , and wherein the peak critical current of the HTS material of the third conducting element is less than the peak critical current of the HTS material of the first conducting element, and wherein the current detector is additionally configured to detect a current in the third conducting element. 15 . A monitoring device according to claim 13 , comprising a plurality of additional conducting elements comprising HTS material and connected in parallel to the first conducting element. 16 . A monitoring device according to claim 1 , wherein the second conducting element comprises a variable resistance. 17 . A monitoring device according to claim 16 , wherein the variable resistance is one of: a potentiometer; a system for controllably causing HTS material in the second conducting element to become normal; and a joint or section of normal conducting material having a temperature-dependent resistance and a device for controlling the temperature thereof. 18 . A monitoring system comprising a plurality of monitoring devices according to claim 1 and a controller configured to monitor currents detected by each monitoring device. 19 . A monitoring system according to claim 18 , wherein the controller is configured to identify reductions in critical currents of the first conducting elements of the monitoring devices on the basis of currents detected in the second conducting elements of the respective monitoring devices. 20 . A monitoring system according to claim 19 , wherein the controller is configured to identify a cause of the reduction in critical current on the basis of the pattern of reductions in critical currents identified for the monitoring devices. 21 . A monitoring system according to claim 18 , wherein the controller is configured to identify conditions likely to result in a quench on the basis of a rapid reduction in critical currents identified for one or more of the monitoring devices. 22 . A monitoring system according to claim 18 , wherein the monitoring devices are arranged in one or more pairs, each pair comprising a first and second monitoring device, wherein: the first and second conducting elements of the first monitoring device are arranged adjacent to the respective first and second conducting elements of the second monitoring device; and the first and second monitoring devices are arranged such that currents in the first conducting element of the each monitoring device flow in the same direction, and currents in the second conducting element of the each monitoring device flow in opposite directions. 23 . A monitoring system according to claim 18 , wherein: the monitoring devices are arranged in one or more sets, each set comprising monitoring devices having first conducting elements with differing patterns of measurement regions and non-measurement regions along the first conducting element; the measurement regions having a reduced critical current compared to the non-measurement regions; and the controller is configured to identify a location of conditions causing a reduction in critical current on the basis of detection of current on a subset of the monitoring devices of a set. 24 . A monitoring system according to claim 18 , wherein the monitoring devices are connected in series. 25 . A monitoring system according to claim 18 , wherein the monitoring devices are connected in parallel, each monitoring device being connected in series with a respective resistor having at least 10 times the total resistance of the monitoring d

Assignees

Inventors

Classifications

  • H10N60/30Primary

    Devices switchable between superconducting and normal states · CPC title

  • H01F6/02Primary

    Quenching; Protection arrangements during quenching {(protection circuits H02H7/001)} · CPC title

  • Coils, e.g. winding, insulating, terminating or casing arrangements therefor · CPC title

  • using Hall-effect devices (Hall elements in arrangements for measuring electrical power G01R21/08) · CPC title

  • Measuring current only · CPC title

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What does patent US2020411217A1 cover?
A monitoring device for use in a cryogenic system. The monitoring device comprises first (201) and second (202) conducting elements and a current detector (205). The first conducting element comprises high temperature superconducting, HTS, material and is configured for connection to a current source (203) and insertion into the cryogenic system. The second conducting element comprises HTS mate…
Who is the assignee on this patent?
Tokamak Energy Ltd
What technology area does this patent fall under?
Primary CPC classification H10N60/30. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Dec 31 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).