Silicon member and method of producing the same

Patent metadata

Field	Value
Publication number	US-2020365399-A1
Application number	US-202016983059-A
Country	US
Kind code	A1
Filing date	Aug 3, 2020
Priority date	Mar 28, 2013
Publication date	Nov 19, 2020
Grant date	—

Abstract

A silicon member and a method of producing the silicon member are provided. Cracking is suppressed in the silicon member even if the silicon member is used in a condition where it is heated. The silicon member 10 includes a coating layer 11 that coats a surface of the silicon member 10, wherein the coating layer 11 is composed of a product of silicon formed by reaction of the silicon on the surface, and a thickness of the coating layer is 15 nm or more and 600 nm or less. It is preferable that the coating layer is a silicon oxide film or a silicon nitride film.

First claim

1 . A silicon member that is used in a condition where the silicon member is heated,
the silicon member comprising a coating layer that coats a surface of the silicon member with micro-cracks, wherein the coating layer is composed of a product of silicon formed by reaction of the silicon on the surface, and a thickness of the coating layer is 15 nm or more and 600 nm or less.

2 . The silicon member according to claim 1 , wherein the coating layer is a silicon oxide film.

3 . The silicon member according to claim 2 , wherein a thickness of the silicon oxide film is 30 nm or more and 520 nm or less.

4 . The silicon member according to claim 1 , wherein the coating layer is a silicon nitride film.

5 . A silicon member that is used in a condition where the silicon member is heated,
wherein after forming a coating layer composed of a product of silicon formed by reaction of the silicon on a surface of the silicon member, the surface is exposed by removing the coating layer.

6 . The silicon member according to claim 5 wherein a coating layer composed of a product of silicon is re-formed on the exposed surface.

7 . A silicon member that is used in a condition where the silicon member is heated,
wherein a strained-layer on a surface layer is removed and an arithmetic average roughness Ra is 2 nm or less by polishing or etching a surface of the silicon member.

8 . The silicon member according to claim 1 , wherein the silicon member is made of a poly-crystalline silicon.

9 . The silicon member according to claim 1 , wherein the silicon member is made of a pseudo-single-crystalline silicon.

10 . The silicon member according to claim 1 , wherein a dimension of the silicon member is: width W is 500 mm to 1500 mm; length is 500 mm to 1500 mm; and thickness is 5 mm to 50 mm.

11 - 15 . (canceled)

16 . The silicon member according to claim 1 , wherein the silicon member is a holding plate for deposition and heat treatment.

17 . The silicon member according to claim 1 , wherein the surface of the holding plate is free of scratches and micro-cracks.

18 . The silicon member according to claim 1 , wherein a maximum load in four-point bending of the holding plate is between 188 to 265 MPa.

19 . The silicon member according to claim 1 , wherein the silicon member is excised from a unidirectionally solidified columnar crystal ingot.

20 . The silicon member according to claim 1 , wherein the coating layer is a silicon nitride film having a thickness of 15 nm or more and 50 nm or less.

Assignees

• Mitsubishi Materials Corp

Inventors

• Nakada Yoshinobu

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6316

  Formation by nitridation, e.g. nitridation of the substrate · CPC title

• H10P14/6309

  of silicon in uncombined form, i.e. pure silicon · CPC title

• H10P14/6304

  Formation by oxidation, e.g. oxidation of the substrate · CPC title