Method of manufacturing display device and source substrate structure

Patent metadata

Field	Value
Publication number	US-2020357950-A1
Application number	US-202016851321-A
Country	US
Kind code	A1
Filing date	Apr 17, 2020
Priority date	May 9, 2019
Publication date	Nov 12, 2020
Grant date	—

Abstract

Provided are a method of manufacturing a display device and a source substrate structure. The method of manufacturing the display device includes holding a light-emitting element on a source substrate that passes laser light of a certain wavelength therethrough, the holding being performed by a release layer between the source substrate and the light-emitting element, forming an adhesive layer on a driving substrate on which a driving substrate-side electrode is formed, moving the light-emitting element to a surface of the adhesive layer on the driving substrate from the source substrate by irradiating laser light of the certain wavelength to the release layer through the source substrate, and adhering the moved light-emitting element to the driving substrate by using the adhesive layer, and the release layer comprises a resin material with a thickness that is greater than or equal to 0.1 μm and is less than or equal to 0.5 μm.

First claim

What is claimed is:

1 . A method of manufacturing a display device, the method comprising:
holding a light-emitting element on a source substrate that passes laser light of a certain wavelength therethrough, the holding being performed by a release layer between the source substrate and the light-emitting element; forming an adhesive layer on a driving substrate on which a driving substrate-side electrode is formed; moving the light-emitting element to a surface of the adhesive layer on the driving substrate from the source substrate by irradiating laser light of the certain wavelength to the release layer through the source substrate; and adhering the moved light-emitting element to the driving substrate by using the adhesive layer, wherein the release layer comprises a resin material with a thickness that is greater than or equal to 0.1 μm and is less than or equal to 0.5 μm.

2 . The method of claim 1 , wherein the holding of the light-emitting element on the source substrate comprises:
forming an electrode on a semiconductor layer formed on a sapphire substrate; forming a temporary adhesive layer on a surface of the semiconductor layer where the electrode is formed; adhering the surface of the semiconductor layer to a relay substrate through the temporary adhesive layer; removing the sapphire substrate; holding the source substrate, by the release layer, on a surface of the semiconductor layer from which the sapphire substrate is removed; removing the temporary adhesive layer and the relay substrate; dividing the semiconductor layer by removing an unnecessary part of the semiconductor layer; and forming a plurality of light-emitting elements on the source substrate.

3 . The method of claim 1 , wherein an absorption rate of the release layer with respect to the certain wavelength ranges from 60% to 100%.

4 . The method of claim 1 , wherein the resin material comprises any one selected from a group consisting of polyimide resin, acryl resin, epoxy resin, polypropylene resin, polycarbonate resin, and acrylonitrile butadiene styrene (ABS) resin.

5 . The method of claim 1 , wherein the release layer comprises:
a first release layer comprising a first resin material formed on the source substrate; and a second release layer comprising a second resin material that is formed on the light-emitting element and is different from the first resin material, wherein the second resin material is formed to a thickness of 0.1 μm to 0.5 μm on the light-emitting element.

6 . The method of claim 5 , wherein the holding of the light-emitting element on the source substrate comprises:
providing the source substrate and applying the first resin material to the source substrate to form the first release layer; forming an electrode on a semiconductor layer formed on a sapphire substrate and forming a temporary adhesive layer on a surface of the semiconductor layer on which the electrode is formed; adhering the surface of the semiconductor layer to a relay substrate through the temporary adhesive layer; removing the sapphire substrate; and applying the second resin material to a surface of the semiconductor layer from which the sapphire substrate is removed, to a thickness of 0.1 μm to 0.5 μm after curing, to form the second release layer.

7 . The method of claim 5 , wherein when an absorption rate of the first release layer with respect to the certain wavelength is Wa1 and an absorption rate of the second release layer with respect to the certain wavelength is Wa2, Wa1<Wa2.

8 . The method of claim 5 , wherein an absorption rate of the first release layer with respect to the certain wavelength is greater than or equal to 1% and less than or equal to 50% and an absorption rate of the second release layer with respect to the certain wavelength is greater than or equal to 60% and less than or equal to 100%.

9 . The method of claim 5 , wherein when a thickness of the first release layer is T1 and a thickness of the second release layer is T2, T1>T2.

10 . The method of claim 5 , wherein a thickness of the first release layer is in a range of 1 μm to 5 μm.

11 . The method of claim 5 , wherein the first resin material comprises polydimethylsiloxane (PDMS) resin, and
the second resin material comprises any one selected from a group consisting of polyimide resin, acryl resin, epoxy resin, polypropylene resin, polycarbonate resin, and acrylonitrile butadiene styrene (ABS) resin.

12 . The method of claim 1 , wherein the certain wavelength is in a range of 248 nm to 355 nm.

13 . The method of claim 1 , wherein the light-emitting element comprises a polygonal shape with a length of a side that is greater than or equal to 1 μm and less than or equal to 100 μm, a circular shape with a diameter that is greater than or equal to 1 μm and less than or equal to 100 μm, or an oval shape with a major axis that is greater than 1 μm and less than or equal to 100 μm and a minor axis that is greater than or equal to 1 μm and less than 100 μm.

14 . A source substrate structure comprising:
a source substrate through which laser light of a certain wavelength passes; a light-emitting element; and a release layer interposed between the source substrate and the light-emitting element, the light-emitting element being held on the source substrate by the release layer, wherein the release layer comprises a resin material with a thickness that is greater than or equal to 0.1 μm and is less than or equal to 0.5 μm.

15 . The source substrate structure of claim 14 , wherein an absorption rate of the release layer with respect to the certain wavelength ranges from 60% to 100%.

16 . The source substrate structure of claim 14 , wherein the resin material comprises any one selected from a group consisting of polyimide resin, acryl resin, epoxy resin, polypropylene resin, polycarbonate resin, and acrylonitrile butadiene styrene (ABS) resin.

17 . The source substrate structure of claim 14 , wherein the release layer comprises:
a first release layer comprising a first resin material; and a second release layer comprising a second resin material that is different from the first resin material and is formed on the light-emitting element, wherein a thickness of the second resin material is greater than or equal to 0.1 μm and is less than or equal to 0.5 μm.

18 . The source substrate structure of claim 17 , wherein when an absorption rate of the first release layer with respect to the certain wavelength is Wa1 and an absorption rate of the second release layer with respect to the certain wavelength is Wa2, Wa1<Wa2.

19 . The source substrate structure of claim 17 , wherein an absorption rate of the first release layer with respect to the certain wavelength is greater than or equal to 1% and less than or equal to 50%, and an absorption rate of the second release layer with respect to the certain wavelength is greater than or equal to 60% and less than or equal to 100%.

20 . The source substrate structure of claim 17 , wherein the first resin material comprises polydimethylsiloxane (PDMS) resin, and
the second resin material comprises any one selected from a group consisting of polyimide resin, acryl resin, epoxy resin, polypropylene resin, polycarbonate resin, and acrylonitrile butadiene styrene (ABS) resin.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Takagi Takashi

Classifications

• H10P72/0442

  Apparatus for placing on an insulating substrate, e.g. tape · CPC title

• H10H20/0364

  of interconnections · CPC title

• H10H20/032

  of electrodes · CPC title

• H10H20/854

  characterised by their material, e.g. epoxy or silicone resins · CPC title

• H10H20/821

  of the light-emitting regions, e.g. non-planar junctions · CPC title