Damage free metal conductor formation

Patent metadata

Field	Value
Publication number	US-2020350178-A1
Application number	US-202016901210-A
Country	US
Kind code	A1
Filing date	Jun 15, 2020
Priority date	May 1, 2019
Publication date	Nov 5, 2020
Grant date	—

Abstract

Exemplary methods of etching semiconductor substrates may include flowing a halogen-containing precursor into a processing region of a semiconductor processing chamber. The processing region may house a substrate having a conductive material and an overlying mask material. The conductive material may be characterized by a first surface in contact with the mask material, and the mask material may define an edge region of the conductive material. The methods may include contacting the edge region of the conductive material with the halogen-containing precursor and the oxygen-containing precursor. The methods may include etching in a first etching operation the edge region of the conductive material to a partial depth through the conductive material to produce a footing of conductive material protruding along the edge region of the conductive material. The methods may also include removing the footing of conductive material in a second etching operation.

First claim

1 . A method of etching a semiconductor substrate, the method comprising:
flowing a first precursor into a processing region of a semiconductor processing chamber, wherein the processing region houses a substrate having a conductive material and an overlying mask material, wherein the conductive material is characterized by a first surface in contact with the mask material, and wherein the mask material defines an edge region of the conductive material; flowing a second precursor into the processing region of the semiconductor processing chamber; contacting the edge region of the conductive material with the first precursor and the second precursor; etching in a first etching operation the edge region of the conductive material to produce a footing of conductive material; and removing the footing of conductive material in a second etching operation.

2 . The method of etching a semiconductor substrate of claim 1 , wherein the second etching operation comprises contacting the footing of conductive material with ions configured to sputter the footing of conductive material.

3 . The method of etching a semiconductor substrate of claim 2 , wherein the first etching operation occurs in a first direction through a thickness of the conductive material, and wherein the second etching operation delivers ions in a direction substantially normal to the first direction.

4 . The method of etching a semiconductor substrate of claim 2 , wherein the second etching operation is performed at an ionic source power below or about 5 kW.

5 . The method of etching a semiconductor substrate of claim 1 , wherein the semiconductor processing chamber is a first chamber, and wherein the second etching operation is performed in a second chamber different from the first chamber.

6 . The method of etching a semiconductor substrate of claim 5 , wherein the first chamber and the second chamber are coupled with a single processing system, wherein the method further comprises transferring the substrate from the first chamber to the second chamber.

7 . The method of etching a semiconductor substrate of claim 6 , wherein the substrate is maintained under vacuum conditions during the transferring from the first chamber to the second chamber.

8 . The method of etching a semiconductor substrate of claim 1 , wherein the first precursor comprises at least one of a chlorine-containing precursor and a fluorine-containing precursor.

9 . The method of etching a semiconductor substrate of claim 1 , wherein the method is performed at a chamber temperature less than or about 150° C.

10 . The method of etching a semiconductor substrate of claim 1 , wherein the conductive material comprises one or more elements selected from the group consisting of titanium, platinum, nickel, tantalum, molybdenum, silicon, and ruthenium.

11 . The method of etching a semiconductor substrate of claim 10 , wherein the conductive material comprises more than 90% by volume nickel monosilicide.

12 . A method of etching a semiconductor substrate, the method comprising:
flowing an etchant precursor into a processing region of a semiconductor processing chamber, wherein the processing region houses a substrate having a conductive material, wherein the conductive material is characterized by a first surface and an edge region of the conductive material; contacting the edge region of the conductive material with the etchant precursor; etching in a first etching operation the edge region of the conductive material, wherein the conductive material is at least partially maintained during the first etching operation; and sputtering the conductive material that is at least partially maintained in a second etching operation.

13 . The method of etching a semiconductor substrate of claim 12 , wherein the etchant precursor comprises a halogen-containing precursor and an oxygen-containing precursor.

14 . The method of etching a semiconductor substrate of claim 13 , wherein at least one of the halogen-containing precursor or the oxygen-containing precursor is plasma enhanced during the first etching operation.

15 . The method of etching a semiconductor substrate of claim 13 , wherein the halogen-containing precursor comprises a combination of a chlorine-containing precursor and a fluorine-containing precursor.

16 . The method of etching a semiconductor substrate of claim 12 , wherein the conductive material comprises a silicide of titanium, nickel, platinum, tantalum, tungsten, cobalt, or molybdenum.

17 . The method of etching a semiconductor substrate of claim 12 , wherein the substrate further comprises a mask material defining the edge region of the conductive material, and wherein the mask material comprises a transition-metal nitride.

18 . The method of etching a semiconductor substrate of claim 12 , wherein the first etching operation occurs in a first direction through a thickness of the conductive material, and wherein the second etching operation delivers ions in a direction substantially normal to the first direction.

19 . A method of etching a semiconductor substrate, the method comprising:
flowing an etchant precursor into a processing region of a first semiconductor processing chamber, wherein the processing region houses a substrate having a conductive material; contacting an edge region of the conductive material with the etchant precursor; etching in a first etching operation the edge region of the conductive material, wherein the conductive material is at least partially maintained during the first etching operation; transferring the substrate from the first semiconductor processing chamber to a second semiconductor processing chamber; and removing the conductive material that is at least partially maintained in a second etching operation in the second semiconductor processing chamber.

20 . The method of etching a silicon-containing material of claim 19 , wherein the first etching operation occurs in a first direction through a thickness of the conductive material, and wherein the second etching operation delivers ions in a direction substantially normal to the first direction.

Assignees

• Applied Materials Inc

Inventors

• Ren He
• Kim Jong Mun
• Clemons Maximillian
• Yu Minrui
• Naik Mehul
• Ying Chentsau

Classifications

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• H10P50/268 Primary

  of silicon-containing layers · CPC title

• H01L21/32139

  Electricity · mapped topic

• H01L21/32137 Primary

  Electricity · mapped topic