Thermistor and method for producing same and thermistor sensor

Patent metadata

Field	Value
Publication number	US-2020348186-A1
Application number	US-201916962671-A
Country	US
Kind code	A1
Filing date	Jan 11, 2019
Priority date	Jan 22, 2018
Publication date	Nov 5, 2020
Grant date	—

Abstract

Provided are a thermistor which can have a satisfactory thermistor film using a metal substrate as well as a high humidity resistance and heat resistance; a method for producing the same; and a thermistor sensor. The thermistor according to the present invention includes a metal substrate 2, an insulating base film 3 formed on the metal substrate, and a thermistor film 4 formed on the insulating base film, wherein the insulating base film is formed so as to fill the irregularities on the surface of the metal substrate where the surface roughness of the insulating base film is lower than that of the metal substrate. In the method for producing this thermistor includes the steps of: applying polysilazane on the metal substrate; drying the polysilazane to form the insulating base film of SiOx containing nitrogen; and depositing the thermistor film on the insulating base film.

First claim

What is claimed is:

1 . A thermistor comprising:
a metal substrate; an insulating base film formed on the metal substrate; and a thermistor film formed on the insulating base film, wherein the insulating base film is formed so as to fill the irregularities on the surface of the metal substrate, and wherein the surface roughness of the insulating base film is lower than that of the metal substrate.

2 . The thermistor according to claim 1 ,
wherein the metal substrate is made of stainless steel, and wherein the insulating base film is a SiO x film containing nitrogen.

3 . The thermistor according to claim 1 ,
wherein the metal substrate is a flexible metal thin sheet, and wherein the thermistor film is a flexible metal nitride film.

4 . The thermistor according to claim 1 ,
wherein the metal substrate is a stainless steel thin sheet, and wherein the thermistor film is a crystalline M-A-N metal nitride (where “M” represents at least one of Ti, V, Cr, Mn, Fe, Co, Ni, and Cu, and “A” represents Al or (Al and Si)), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

5 . A thermistor sensor comprising:
the metal substrate, the insulating base film, and the thermistor film which are included in the thermistor according to claim 1 , and a pair of pattern electrodes formed on the thermistor film.

6 . A method for producing the thermistor according to claim 1 comprising the steps of:
applying polysilazane on the metal substrate;
drying the polysilazane to form the insulating base film of SiO x containing nitrogen; and
depositing the thermistor film on the insulating base film.

Assignees

• Mitsubishi Materials Corp

Inventors

• Suzuki Shunpei
• Fujita Toshiaki
• Chitose Norihisa
• Uozumi Gakuji
• Takeshima Kazuta
• Nagatomo Noriaki

Classifications

• H01C17/283

  Precursor compositions therefor, e.g. pastes, inks, glass frits · CPC title

• H01C17/281

  by thick film techniques · CPC title

• G01K7/22 Primary

  the element being a non-linear resistance, e.g. thermistor (G01K7/26 takes precedence) · CPC title

• H01C7/02

  having positive temperature coefficient · CPC title

• H01C7/008

  Thermistors (H01C7/02 - H01C7/06 take precedence) · CPC title