Alkali metal-incorporated chalcopyrite compound-based thin film and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-2020343393-A1
Application number	US-201916397334-A
Country	US
Kind code	A1
Filing date	Apr 29, 2019
Priority date	Apr 25, 2019
Publication date	Oct 29, 2020
Grant date	—

Abstract

A chalcopyrite compound-based thin film in which an alkali metal is incorporated, and a method of fabricating the same are provided. The chalcopyrite compound-based thin film in which an alkali metal is incorporated may have improved film characteristics such as excellent chalcopyrite crystal characteristics and improved surface characteristics, and may exhibit improved optical characteristics by control of the distribution of constituent elements in the chalcopyrite compound layer. Accordingly, performance of a solar cell including the chalcopyrite compound-based thin film may be improved. The chalcopyrite compound-based thin film may be easily fabricated through a solution process.

First claim

What is claimed is:

1 . A chalcopyrite compound-based thin film comprising:
a substrate; a chalcopyrite compound layer as a monolayer or multiple layers on the substrate; and an alkali metal layer located inside or on top of the chalcopyrite compound layer.

2 . The chalcopyrite compound-based thin film of claim 1 , wherein the alkali metal layer comprises at least one element selected from the group consisting of lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), and francium (Fr).

3 . The chalcopyrite compound-based thin film of claim 1 , wherein the alkali metal layer has a thickness of about 1 nm to about 500 nm.

4 . The chalcopyrite compound-based thin film of claim 1 , wherein an amount of the alkali metal layer is about 0.01 wt % to about 30 wt % based on a total weight of the chalcopyrite compound layer and the alkali metal layer.

5 . The chalcopyrite compound-based thin film of claim 1 , wherein the chalcopyrite compound layer comprises an inorganic compound having a chalcopyrite crystal structure consisting of Group II, III, and VI elements.

6 . The chalcopyrite compound-based thin film of claim 5 , wherein the inorganic compound comprises at least one of a copper indium selenide (CISe)-based compound, a copper indium gallium selenide (CIGSe)-based compound, a copper indium sulfide (CIS)-based compound, a copper indium gallium sulfide (CIGS)-based compound, and a copper indium gallium sulfur selenide (CIGSSe)-based compound.

7 . The chalcopyrite compound-based thin film of claim 1 , wherein a concentration distribution of at least one of In, Ga, Cu, S, and Se in upper and lower regions of the chalcopyrite compound layer is different from that in a central region of the chalcopyrite compound layer.

8 . The chalcopyrite compound-based thin film of claim 7 , wherein the concentration of at least one of In, Ga, Cu, S, and Se in the upper and lower regions of the chalcopyrite compound layer varies within a range of about 0.0001 times to about 500 times with respect to that in the central region thereof.

9 . The chalcopyrite compound-based thin film of claim 1 , wherein the chalcopyrite compound layer has a band gap grading structure varying in a depth direction of the chalcopyrite compound layer.

10 . The chalcopyrite compound-based thin film of claim 1 , wherein the substrate comprises at least one of indium tin oxide, fluorine-doped indium tin oxide, glass, molybdenum (Mo)-coated glass, metal foil, metal plate, and a conductive polymer material.

11 . A solar cell comprising the chalcopyrite compound-based thin film according to claim 1 .

12 . A method of fabricating a chalcopyrite compound-based thin film, the method comprising:
applying a first metal precursor paste onto a substrate and thermally treating the applied first metal precursor paste to form a first metal oxide thin film; applying an alkali precursor solution onto the first metal oxide thin film and thermally treating the applied precursor solution to form an alkali metal layer; applying a second metal precursor paste onto the alkali metal layer and thermally treating the applied second metal precursor paste to form a second metal oxide thin film; and thermally treating a stack of the first metal oxide thin film, the alkali metal layer, and the second metal oxide thin film under an atmosphere of a sulfur precursor in a gas state, a selenium precursor in a gas state, or a mixture thereof.

13 . The method of claim 12 , wherein the first metal precursor paste and the second metal precursor paste each independently comprise a metal precursor, an organic binder, and a solvent.

14 . The method of claim 13 , wherein the metal precursor comprises at least one Group IB metal precursor, at least one Group IIIA metal precursor, or a mixture thereof.

15 . The method of claim 13 , wherein the organic binder comprises one or a mixture of at least two of ethyl cellulose, polyvinyl acetate, palmitic acid, polyethylene glycol, polypropylene glycol, polypropylene carbonate, and propylene diol.

16 . The method of claim 13 , wherein the solvent comprises at least one of water, methanol, ethanol, propanol, butanol, acetone, dimethyl ketone, propanone, methoxyethane, ethoxyethane, 1,2-dimethoxyethane, benzene, toluene, xylene, tetrahydrofuran, anisole, hexane, cyclohexane, carbon tetrachloride, methylene chloride, and chloroform.

17 . The method of claim 12 , wherein the application and the thermal treatment of the first metal precursor paste is performed one to 20 times, and the application and the thermal treatment of the second metal precursor paste is performed one to 20 times.

18 . The method of claim 12 , wherein the alkali metal precursor solution comprises at least one compound selected from fluoride, chloride, hydroxide, bromide, iodide, nitrate, perchlorate, carbonate, and sulfate compounds of an alkali metal.

19 . The method of claim 12 , wherein the alkali metal precursor solution comprises at least one solvent selected from water, methanol, ethanol, propanol, butanol, acetone, dimethyl ketone, propanone, methoxyethane, ethoxyethane, 1,2-dimethoxyethane, benzene, toluene, xylene, tetrahydrofuran, anisole, hexane, cyclohexane, carbon tetrachloride, methylene chloride, and chloroform.

20 . The method of claim 12 , wherein the application is performed using at least one method selected from printing, spin coating, roll-to-roll coating, slot die coating, bar coating, and spray coating.

21 . A method of fabricating a chalcopyrite compound-based thin film, the method comprising:
applying a metal precursor paste onto a substrate and thermally treating the applied metal precursor paste to form a metal oxide thin film; and thermally treating the metal oxide thin film under an atmosphere of a sulfur precursor in a gas state, a selenium precursor in a gas state, or a mixture thereof, wherein the metal precursor paste comprises at least one Group IB metal precursor, at least one Group IIIA metal precursor, or a mixture thereof; and an alkali metal or an alkali metal precursor.

22 . A method of fabricating a chalcopyrite compound-based thin film, the method comprising:
applying a first metal precursor paste onto a substrate and thermally treating the applied first metal precursor paste to form a first metal oxide thin film; applying a second metal precursor paste onto the first metal oxide thin film and thermally treating the applied second metal precursor paste to form a second metal oxide thin film; and thermally treating a stack of the first metal oxide thin film and the second metal oxide thin film under an atmosphere of a sulfur precursor in a gas state, a selenium precursor in a gas state, or a mixture thereof, wherein the first metal precursor paste and the second metal precursor paste each independently comprise at least one Group IB metal precursor, at least one Group IIIA metal precursor, or a mixture thereof, and the second metal precursor paste further comprises an alkali metal precursor.

Assignees

• Korea Inst Sci & Tech

Inventors

• Min Byoung Koun
• Hwang Yun Jeong
• Oh Hyung-Suk
• Lee Ung
• Won Dahye
• Lee Dong Ki
• Kim Joo-Hyun
• Kim Min Kyu

Classifications

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title

• H10F19/30

  comprising thin-film photovoltaic cells · CPC title

• H10F77/126

  comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS] · CPC title

• H10F77/311

  for photovoltaic cells · CPC title

• H10F77/127 Primary

  comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe · CPC title