Semiconductor device and method for fabricating the same

Patent metadata

Field	Value
Publication number	US-2020328126-A1
Application number	US-202016914483-A
Country	US
Kind code	A1
Filing date	Jun 29, 2020
Priority date	Jun 12, 2018
Publication date	Oct 15, 2020
Grant date	—

Abstract

A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the fin-shaped structure into a first portion and a second portion, and a gate structure on the SDB structure. Preferably, the SDB structure includes silicon oxycarbonitride (SiOCN), a concentration portion of oxygen in SiOCN is between 30% to 60%, and the gate structure includes a metal gate having a n-type work function metal layer or a p-type work function metal layer.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
a fin-shaped structure on a substrate; a single diffusion break (SDB) structure in the fin-shaped structure to divide the fin-shaped structure into a first portion and a second portion, wherein the SDB structure comprises silicon oxycarbonitride (SiOCN); and a gate structure on the SDB structure, wherein the gate structure comprises a metal gate and the metal gate comprises a n-type work function metal layer or a p-type work function metal layer.

2 . The semiconductor device of claim 1 , further comprising a liner between the SDB structure and the fin-shaped structure.

3 . The semiconductor device of claim 2 , wherein the liner and the SDB structure comprise different materials.

4 . The semiconductor device of claim 2 , wherein the liner comprises silicon oxide.

5 . The semiconductor device of claim 1 , further comprising:
a gate dielectric layer between the SDB structure and the gate structure; and a source/drain region adjacent to the gate structure.

6 . The semiconductor device of claim 5 , wherein the gate dielectric layer comprises a L-shape.

7 . The semiconductor device of claim 1 , wherein the fin-shaped structure is disposed extending along a first direction and the SDB structure is disposed extending along a second direction.

8 . The semiconductor device of claim 7 , wherein the first direction is orthogonal to the second direction.

9 . The semiconductor device of claim 1 , wherein a concentration proportion of oxygen in SiOCN is between 30% to 60%.

10 . The semiconductor device of claim 1 , wherein a stress of the SDB structure is between 100 MPa to −500 MPa.

11 . A semiconductor device, comprising:
a substrate having a first region and a second region; a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; a first single diffusion break (SDB) structure in the first fin-shaped structure to divide the first fin-shaped structure into a first portion and a second portion, wherein the first SDB structure comprises silicon oxycarbonitride (SiOCN); a second SDB structure in the second fin-shaped structure to divide the second fin-shaped structure into a third portion and a fourth portion; a first gate structure on the first SDB structure, wherein the first gate structure comprises a first metal gate and the first metal gate comprises a n-type work function metal layer; and a second gate structure on the second SDB structure, wherein the second gate structure comprises a second metal gate and the second metal gate comprises a p-type work function metal layer.

12 . The semiconductor device of claim 11 , further comprising a first liner between the first SDB structure and the first fin-shaped structure.

13 . The semiconductor device of claim 12 , wherein the first liner and the first SDB structure comprise different materials.

14 . The semiconductor device of claim 11 , further comprising:
a first gate dielectric layer between the first SDB structure and the first gate structure; and a first source/drain region adjacent to the first gate structure.

15 . The semiconductor device of claim 14 , wherein the first gate dielectric layer comprises a L-shape.

16 . The semiconductor device of claim 11 , wherein the second SDB structure comprises SiOCN.

17 . The semiconductor device of claim 11 , wherein each of the first fin-shaped structure and the second fin-shaped structure is disposed extending along a first direction and the first SDB structure and the second SDB structure are disposed extending along a second direction.

18 . The semiconductor device of claim 17 , wherein the first direction is orthogonal to the second direction.

19 . The semiconductor device of claim 11 , wherein a concentration proportion of oxygen in SiOCN is between 30% to 60%.

20 . The semiconductor device of claim 11 , wherein a stress of the first SDB structure is between 100 MPa to −500 MPa.

Assignees

• United Microelectronics Corp

Inventors

• Chuang Fu-Jung
• Lin Ching-Ling
• Chuang Po-Jen
• Wang Yu-Ren
• Liang Wen-An
• Kuo Chia-Ming
• Huang Guan-Wei
• Chung Yuan-Yu
• Tseng I-Ming

Classifications

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10D84/853

  comprising FinFETs · CPC title

• H10D84/0193

  the components including FinFETs · CPC title

• H10D84/0188 Primary

  Manufacturing their isolation regions · CPC title