A method for producing an electromigration-resistant crystalline transition-metal silicide layer, a corresponding layer sequence, and a micro heater

Patent metadata

Field	Value
Publication number	US-2020323041-A1
Application number	US-201716304005-A
Country	US
Kind code	A1
Filing date	May 24, 2017
Priority date	May 24, 2016
Publication date	Oct 8, 2020
Grant date	—

Abstract

A method for producing an electromigration-resistant crystalline transition-metal silicide layer of a layer sequence, for example, to provide a micro heater includes, supplying a semiconductor substrate including an electrically insulating layer; physically depositing a transition metal on the electrically insulating layer; carrying out a plasma-enhanced chemical vapor deposition while forming an inert gas plasma; conveying monosilane to the inert gas plasma, with the monosilane decomposing into silicon and hydrogen and the silicon in the gaseous phase entering into a chemical reaction with the transition metal in order to form the electromigration-resistant crystalline transition-metal silicide layer.

First claim

1 - 12 . (canceled)

13 . A method comprising:
supplying a semiconductor substrate that includes an electrically insulating layer; depositing, with a physical deposition process, a transition metal onto the electrically insulating layer; carrying out a plasma-enhanced chemical vapor deposition while forming an inert gas plasma; and conveying monosilane (SiH4) to the inert gas plasma, thereby decomposing the monosilane into:
(a) hydrogen; and
(b) silicon in a gaseous state in which the silicon chemically reacts with the transition metal, thereby forming an electromigration-resistant crystalline transition-metal silicide layer.

14 . The method of claim 13 , wherein the transition metal includes platinum.

15 . The method of claim 13 , further comprising producing the inert gas plasma by igniting argon.

16 . The method of claim 13 , wherein the deposition of the transition metal is carried out using DC magnetron sputtering.

17 . The method of claim 13 , wherein, during the plasma-enhanced chemical vapor deposition, a chamber pressure is adjusted between 1.5 Torr and 2.5 Torr at least partly attributable to the inert gas plasma.

18 . The method of claim 13 , wherein a temperature is adjusted between 700° C. and 900° C. during the plasma-enhanced chemical vapor deposition.

19 . The method of claim 13 , wherein the electromigration-resistant crystalline transition-metal silicide layer is tempered at a temperature of more than 900° C.

20 . The method of claim 13 , further comprising dinitrogen monoxide (N 2 O) to the inert gas plasma.

21 . The method of claim 13 , patterning the electromigration-resistant crystalline transition-metal silicide layer into a micro heater.

22 . The method of claim 21 , wherein the patterning is performed using ion-beam etching with a photolithographic mask.

23 . A layered arrangement comprising:
a semiconductor substrate that includes an electrically insulating layer; a transition metal on the electrically insulating layer; and an electromigration-resistant crystalline transition-metal silicide layer formed by a chemical reaction of the transition metal with gaseous silicon formed by a decomposition of monosilane (SiH4) in an inert gas plasma.

24 . A sensor comprising an electromigration-resistant crystalline transition-metal silicide layer.

25 . The sensor of claim 24 , wherein the sensor is a gas sensor.

26 . The sensor of claim 24 , wherein the sensor is a lambda sensor.

27 . The sensor of claim 24 , wherein the sensor is a MEMS sensor.

28 . The sensor of claim 24 , wherein the sensor is a pressure sensor.

29 . The sensor of claim 24 , wherein:
the electromigration-resistant crystalline transition-metal silicide layer is part of a layered arrangement of the sensor, the layered arrangement including:
the electromigration-resistant crystalline transition-metal silicide layer;
a semiconductor substrate that includes an electrically insulating layer; and
a transition metal on the electrically insulating layer and that chemically reacts with gaseous silicon formed by a decomposition of monosilane (SiH4) in an inert gas plasma, thereby forming the electromigration-resistant crystalline transition-metal silicide layer.

30 . The sensor of claim 24 , wherein the electromigration-resistant crystalline transition-metal silicide layer is arranged as a micro heater.

31 . The sensor of claim 30 , wherein the micro heater is patterned.

Assignees

• Bosch Gmbh Robert

Inventors

• Rusanov Radoslav
• Nagel Sabine

Classifications

• H05B3/265

  the insulating base being an inorganic material, e.g. ceramic (H05B3/262 takes precedence) · CPC title

• H05B3/141

  Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds · CPC title

• H05B3/16

  the conductor being mounted on an insulating base · CPC title

• H05B3/148 Primary

  Silicon, e.g. silicon carbide, magnesium silicide, heating transistors or diodes · CPC title

• H05B2203/017

  Manufacturing methods or apparatus for heaters · CPC title