Semiconductor laser wafer and semiconductor laser

Patent metadata

Field	Value
Publication number	US-2020274331-A1
Application number	US-201916704157-A
Country	US
Kind code	A1
Filing date	Dec 5, 2019
Priority date	Feb 27, 2019
Publication date	Aug 27, 2020
Grant date	—

Abstract

A semiconductor laser wafer includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and a composition evaluation layer. The active layer is provided on the first semiconductor layer; multiple periods of pairs of a light-emitting multi-quantum well region and an injection multi-quantum well region are stacked in the active layer; the light-emitting multi-quantum well region is made of a first compound semiconductor and a second compound semiconductor. The second semiconductor layer is provided on the active layer. The composition evaluation layer is provided above the active layer and includes a first film and a second film; the first film is made of the first compound semiconductor and has a first thickness; and the second film is made of the second compound semiconductor and has a second thickness.

First claim

What is claimed is:

1 . A semiconductor laser wafer, comprising:
a substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer, multiple periods of pairs of a light-emitting multi-quantum well region and an injection multi-quantum well region being stacked in the active layer, the light-emitting multi-quantum well region being made of a first compound semiconductor and a second compound semiconductor, the injection multi-quantum well region being made of the first compound semiconductor and the second compound semiconductor; a second semiconductor layer provided on the active layer; and a composition evaluation layer including a first film and a second film and being provided above the active layer, the first film being made of the first compound semiconductor and having a first thickness, the second film being made of the second compound semiconductor and having a second thickness.

2 . The wafer according to claim 1 , wherein the composition evaluation layer is provided at least one of on the second semiconductor layer, between the active layer and the second semiconductor layer, or inside the second semiconductor layer.

3 . The wafer according to claim 1 , wherein
the first thickness is not less than 5 nm and not more than 30 nm, and the second thickness is not less than 5 nm and not more than 30 nm.

4 . The wafer according to claim 2 , wherein
the first thickness is not less than 5 nm and not more than 30 nm, and the second thickness is not less than 5 nm and not more than 30 nm.

5 . The wafer according to claim 1 , wherein the first compound semiconductor and the second compound semiconductor each are ternary crystals.

6 . The wafer according to claim 2 , wherein the first compound semiconductor and the second compound semiconductor each are ternary crystals.

7 . The wafer according to claim 3 , wherein the first compound semiconductor and the second compound semiconductor each are ternary crystals.

8 . A semiconductor laser, comprising:
a substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer, multiple periods of pairs of a light-emitting multi-quantum well region and an injection multi-quantum well region being stacked in the active layer, the light-emitting multi-quantum well region being made of a first compound semiconductor and a second compound semiconductor, the injection multi-quantum well region being made of the first compound semiconductor and the second compound semiconductor; a second semiconductor layer provided on the active layer; and a composition evaluation layer including a first film and a second film and being provided above the active layer, the first film being made of the first compound semiconductor and having a first thickness, the second film being made of the second compound semiconductor and having a second thickness.

9 . The laser according to claim 8 , wherein the first compound semiconductor and the second compound semiconductor each are ternary crystals.

10 . The laser according to claim 8 , wherein the composition evaluation layer is provided at least one of on the second semiconductor layer, between the active layer and the second semiconductor layer, or inside the second semiconductor layer.

11 . The laser according to claim 8 , wherein
the first thickness is not less than 5 nm and not more than 30 nm, and the second thickness is not less than 5 nm and not more than 30 nm.

Assignees

• Toshiba Kk

Inventors

• Kaneko Kei
• Saito Shinji
• Hashimoto Rei
• Kakuno Tsutomu
• Yamamoto Yuichiro
• Takase Tomohiro

Classifications

• H01S2304/00

  Special growth methods for semiconductor lasers · CPC title

• H01S2301/17

  Semiconductor lasers comprising special layers · CPC title

• H01S5/34306

  emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers · CPC title

• H01S5/343 Primary

  in AIIIBV compounds, e.g. AlGaAs-laser {, InP-based laser} · CPC title

• H01S5/3419

  intersubband lasers, e.g. laser transitions within the conduction or valence bands in non unipolar structures · CPC title