Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and magnetic memory

Patent metadata

Field	Value
Publication number	US-2020235290-A1
Application number	US-202016844249-A
Country	US
Kind code	A1
Filing date	Apr 9, 2020
Priority date	Nov 14, 2017
Publication date	Jul 23, 2020
Grant date	—

Abstract

Provided is a spin-orbit-torque magnetization rotational element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The spin-orbit-torque magnetization rotational element includes a spin-orbit torque wiring that extends in a first direction, and a first ferromagnetic layer that is located on a side of one surface of the spin-orbit torque wiring. A side surface of the spin-orbit torque wiring and a side surface of the first ferromagnetic layer form a continuous inclined surface in any side surface.

First claim

What is claimed is:

1 . A spin-orbit-torque magnetoresistance effect element, comprising:
a spin-orbit torque wiring that extends in a first direction; a first ferromagnetic layer that is located on a side of one surface of the spin-orbit torque wiring, wherein a side surface of the spin-orbit torque wiring and a side surface of the first ferromagnetic layer form a continuous inclined surface in any side surface, a second ferromagnetic layer that is disposed to face a side of the first ferromagnetic layer which is opposite to the spin-orbit torque wiring; a nonmagnetic layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer, and the thickness of inside the nonmagnetic layer is thicker than the thickness of outside the nonmagnetic layer.

2 . The spin-orbit-torque magnetoresistance effect element according to claim 1 , further comprising:
two via wirings extending from a surface of the spin-orbit torque wiring which is opposite to the first ferromagnetic layer, wherein the two via wirings are located at positions at which the first ferromagnetic layer is sandwiched when viewed from the lamination direction, and partially overlap the first ferromagnetic layer.

3 . The spin-orbit-torque magnetoresistance effect element according to claim 1 , further comprising:
an underlayer between the spin-orbit torque wiring and the first ferromagnetic layer, wherein side surfaces of the spin-orbit torque wiring, the first ferromagnetic layer, and the underlayer form a continuous inclined surface in any side surface.

4 . The spin-orbit-torque magnetoresistance effect element according to claim 3 , wherein the underlayer is amorphous.

5 . The spin-orbit-torque magnetoresistance effect element according to claim 1 , further comprising:
a magnetization control layer between the spin-orbit torque wiring and the first ferromagnetic layer, wherein side surfaces of the spin-orbit torque wiring, the first ferromagnetic layer, and the magnetization control layer form a continuous inclined surface in any side surface.

6 . The spin-orbit-torque magnetoresistance effect element according to claim 5 ,
wherein a crystal structure of the magnetization control layer is tetragonal.

7 . The spin-orbit-torque magnetoresistance effect element according to claim 1 ,
wherein the first ferromagnetic layer and the second ferromagnetic layer have magnetic anisotropy in an in-plane direction, and axes of easy magnetization of the layers are inclined with respect to the first direction.

8 . A magnetic memory, comprising:
a plurality of the spin-orbit-torque magnetoresistance effect elements according to claim 1 .

9 . A magnetoresistance effect element, comprising:
a wiring that extends in a first direction; a first ferromagnetic layer that is located on a side of one surface of the wiring; and a nonmagnetic layer that is provided on a side of one surface of the first ferromagnetic layer with the wiring or a side of other surface of the first ferromagnetic layer opposite to the wiring, wherein a side surface of the wiring and a side surface of the first ferromagnetic layer form a continuous inclined surface in any side surface, and the thickness of inside the nonmagnetic layer is thicker than the thickness of outside the nonmagnetic layer.

10 . The magnetoresistance effect element according to the claim 9 , wherein the nonmagnetic layer that is provided on the side of one surface of the first ferromagnetic layer with the wiring.

11 . The magnetoresistance effect element according to claim 10 , further comprising:
two via wirings extending from a surface of the wiring which is opposite to the first ferromagnetic layer, wherein the two via wirings are located at positions at which the first ferromagnetic layer is sandwiched when viewed from the lamination direction, and partially overlap the first ferromagnetic layer.

12 . A magnetic memory, comprising:
a plurality of the magnetoresistance effect elements according to claim 10 .

Assignees

• Tdk Corp

Inventors

• Sasaki Tomoyuki
• SHIOKAWA Yohei
• Komura Eiji
• SUDA Keita

Classifications

• H10N50/85 Primary

  Materials of the active region · CPC title

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H10N50/80

  Constructional details · CPC title

• H10N50/10 Primary

  Magnetoresistive devices · CPC title

• H10N52/80

  Constructional details · CPC title