Semiconductor device including word line cut

Patent metadata

Field	Value
Publication number	US-2020203366-A1
Application number	US-201916453094-A
Country	US
Kind code	A1
Filing date	Jun 26, 2019
Priority date	Dec 24, 2018
Publication date	Jun 25, 2020
Grant date	—

Abstract

A semiconductor device includes a substrate having a cell region and an extension region, channel structures disposed in the cell region and extending in a first direction substantially perpendicular to an upper surface of the substrate, gate electrode layers surrounding the channel structures and stacked to be spaced apart from each other in the first direction and to extend in a second direction substantially perpendicular to the first direction, and word line cuts cutting the gate electrode layers in the first direction and continuously extending in the second direction. At least one of the word line cuts is an extension word line cut with an extension portion having an area that is different from those of the remaining word line cuts located at the same level as the at least one word line cut in a predetermined region extending in the second direction.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
a substrate comprising a cell region and an extension region; a plurality of channel structures disposed in the cell region and extending in a first direction substantially perpendicular to an upper surface of the substrate; a plurality of gate electrode layers surrounding the channel structures, wherein the gate electrode layers are spaced apart from each other in the first direction and extend in a second direction substantially perpendicular to the first direction; and a plurality of word line cuts cutting the gate electrode layers in the first direction and continuously extending in the second direction, wherein at least one of the word line cuts is an extension word line cut comprising an extension portion having an area that is different from an area of each of the remaining word line cuts other than the at least one word line cut located at the same level as the at least one word line cut in a first predetermined region extending in the second direction.

2 . The semiconductor device of claim 1 , wherein the area of the extension portion is greater than the area of each of the remaining word line cuts other than the at least one word line cut in the first predetermined region.

3 . The semiconductor device of claim 1 , wherein the extension portion is disposed in the cell region in an area adjacent to the extension region.

4 . The semiconductor device of claim 1 , wherein the extension portion is disposed in the cell region and extends into the extension region in the second direction.

5 . The semiconductor device of claim 1 , wherein, in a plan view, the extension word line cut is disposed adjacent to both sidewalls of each of the gate electrode layers spaced apart from each other in a third direction substantially perpendicular to the second direction.

6 . The semiconductor device of claim 1 , wherein the extension word line cut is one of a plurality of identical extension word line cuts, and the extension word line cuts are alternately disposed substantially in parallel with the remaining word line cuts other than the extension word line cuts in the second direction.

7 . The semiconductor device of claim 1 , further comprising:
an insulating common source line spacer disposed in each of the word line cuts; and a conductive common source line disposed in each of the word line cuts.

8 . The semiconductor device of claim 1 , wherein the extension portion comprises:
an uppermost extension portion located at a level that is equal to that of an uppermost gate electrode layer located at an uppermost level from among the gate electrode layers; and a lowermost extension portion located at a level that is equal to that of a lowermost gate electrode layer located at a lowermost level from among the gate electrode layers and having an area that is relatively smaller than that of the uppermost extension portion.

9 . The semiconductor device of claim 8 , wherein the lowermost extension portion has a width that is greater than or equal to that of a portion disposed in a region except for a second predetermined region among the word line cuts located at the same level as the lowermost extension portion.

10 . A semiconductor device, comprising:
a substrate; a plurality of channel structures extending in a first direction substantially perpendicular to an upper surface of the substrate; a plurality of gate electrode layers surrounding the channel structures, wherein the gate electrode layers are stacked in a form of a cascade shape so as to be spaced apart from each other in the first direction and to extend in a second direction substantially perpendicular to the first direction; a plurality of word line cuts cutting the gate electrode layers in the first direction and extending in the second direction; and a connector connecting gate electrode layers disposed on a same layer and protruding from each of the gate electrode layers, wherein the word line cuts comprise extension word line cuts having an extension portion, and separation word line cuts separated by the connector.

11 . The semiconductor device of claim 10 , wherein the extension portion is disposed in a predetermined region extending in a third direction substantially perpendicular to the second direction, and has an area that is greater than an area of a portion disposed in the predetermined region among the separation word line cuts.

12 . The semiconductor device of claim 10 , wherein at least one of the extension word line cuts is disposed between adjacent separation word line cuts in the second direction.

13 . The semiconductor device of claim 10 , wherein:
the substrate comprises a cell region in which a plurality of cell channel structures is disposed and an extension region in which a plurality of pad regions in a form of a stair shape is disposed; and the extension portion is disposed in the cell region and the connector is disposed in the extension region.

14 . The semiconductor device of claim 13 , wherein the extension portion extends from the cell region into the extension region in the second direction.

15 . The semiconductor device of claim 14 , wherein:
each of the gate electrode layers comprises a ground select line, a word line, and a string select line which are sequentially stacked from an upper surface of the substrate in the first direction; the string select lines are separated from each other and extend on the same layer; and the word lines are connected by the connector and extend on the same layer.

16 . The semiconductor device of claim 15 , wherein the extension portion extends to the pad regions of the string select line in a plan view.

17 . The semiconductor device of claim 15 , wherein the extension portion located at a level that is equal to that of the string select line has an area that is relatively greater than that of the extension portion located at a level that is equal to that of the ground select line.

18 . The semiconductor device of claim 17 , wherein the extension portion located at a level that is equal to that of the ground select line has an area that is greater than or equal to that of a portion located at a level that is equal to that of the string select line and corresponding to the extension portion on the separation word line cut in a third direction substantially perpendicular to the second direction.

19 . The semiconductor device of claim 10 , wherein:
the substrate comprises a cell region in which cell channel structures are disposed and an extension region in which contacts connected to the gate electrode layers are disposed; the separation word line cuts comprises a first separation word line cut extending toward the cell region with respect to the connector in the second direction, and a second separation word line cut extending toward the extension region with respect to the connector in the second direction; and the extension portion is disposed at a position corresponding to the first separation word line cut in the second direction.

20 . A semiconductor device, comprising:
a substrate; a plurality of channel structures extending in a first direction substantially perpendicular to an upper surface of the substrate; a plurality of gate electrode layers surrounding the channel structures, wherein the gate electrode layers are spaced apart from each other in the first direction and extend in a second direction substantially perpendicular to the first direction; a plurality of comm

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Young Woo
• Kwon Joon Young
• Lee Jung Hwan
• Sung Jung Tae
• Shin Ji Min

Classifications

• H10B43/27 Primary

  the channels comprising vertical portions, e.g. U-shaped channels · CPC title

• H10W20/01

  Manufacture or treatment · CPC title

• H10B43/35 Primary

  with cell select transistors, e.g. NAND · CPC title

• H10B43/40

  characterised by the peripheral circuit region · CPC title

• H10B41/27

  the channels comprising vertical portions, e.g. U-shaped channels · CPC title