Symmetric plasma process chamber

Patent metadata

Field	Value
Publication number	US-2020185192-A1
Application number	US-202016791947-A
Country	US
Kind code	A1
Filing date	Feb 14, 2020
Priority date	Oct 5, 2011
Publication date	Jun 11, 2020
Grant date	—

Abstract

Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

First claim

1 . A plasma processing apparatus, comprising:
a lid assembly and a chamber body enclosing a processing region; and a substrate support assembly disposed in the chamber body, wherein the substrate support assembly comprises:
a support pedestal disposed in a central region of the chamber body fluidly sealed from the processing region;
a lower electrode supported by the support pedestal;
a first actuation device disposed within the central region and configured to vertically move the lower electrode a distance;
a central support member sealed to the chamber body and the lower electrode;
a plasma screen supported by the lower electrode and extending along a periphery of the substrate support assembly;
an upper liner having an inner wall that maintains an overlap with the plasma screen as the first actuation device moves the lower electrode to protect the substrate support assembly during processing;
a plurality of lift pins disposed in the substrate support assembly; and
a second actuation device disposed within the central region and configured to vertically move the plurality of lift pins, wherein the plurality of lift pins are coupled to a lift pin plate.

2 . The plasma processing apparatus of claim 1 , further comprising a vacuum tube fluidly coupled to one or more lift pin holes disposed within the lower electrode.

3 . The plasma processing apparatus of claim 2 , further comprising a gas supply line fluidly coupled to a gas port disposed in the lower electrode.

4 . The plasma processing apparatus of claim 2 , wherein the vacuum tube is fluidly coupled to an exhaust region of the chamber body.

5 . The plasma processing apparatus of claim 1 , wherein the lid assembly comprises:
an upper electrode having one or more fluid inlets and one or more fluid outlets each having conductive fittings; and a plurality of conductive plugs, wherein the conductive fittings and conductive plugs are arranged symmetrically about a central axis of the substrate support assembly.

6 . The plasma processing apparatus of claim 1 , wherein the lid assembly comprises:
an upper electrode having a central manifold configured to distribute processing gas into the processing region and one or more outer manifolds configured to distribute processing gas into the processing region; and a ring manifold coupled to the one or more outer manifolds via a plurality of gas tubes arranged symmetrically about a central axis of the substrate support assembly.

7 . The plasma processing apparatus of claim 1 , wherein the second actuation device comprises;
a lead screw coupled to the lift pin plate; and an actuator configured to advance and retract the lead screw.

8 . The plasma processing apparatus of claim 7 , wherein the lead screw extends within the support pedestal.

9 . The plasma processing apparatus of claim 1 , wherein the lift pin plate is disposed within an opening within the lower electrode.

10 . A substrate support assembly for a plasma processing apparatus, comprising:
a support pedestal; a lower electrode coupled to and supported by the support pedestal; a first actuation device coupled to the support pedestal and configured to vertically move the lower electrode a distance; a central support member sealed to a chamber body and the lower electrode; and a plasma screen supported by the lower electrode and extending along a periphery of the substrate support assembly, the plasma screen maintaining an overlap with an upper liner as the first actuation device moves the lower electrode to protect the substrate support assembly during processing: a plurality of lift pins coupled to a lift pin plate.

11 . The substrate support assembly of claim 10 , further comprising a second actuation device coupled to the lift pin plate and configured to vertically move the plurality of lift pins.

12 . The substrate support assembly of claim 11 , wherein the second actuation device comprises;
a lead screw coupled to the lift pin plate; and an actuator configured to advance and retract the lead screw.

13 . The substrate support assembly of claim 12 , where the lead screw extends within the support pedestal.

14 . The substrate support assembly of claim 10 , wherein the lift pin plate is disposed within an opening within the lower electrode.

15 . A plasma processing apparatus, comprising:
a lid assembly and a chamber body enclosing a processing region; a substrate support assembly disposed in the chamber body, wherein the substrate support assembly comprises:
a support pedestal disposed in a central region of the chamber body fluidly sealed from the processing region;
a lower electrode supported by the support pedestal; and
a first actuation device disposed within the central region and configured to vertically move the lower electrode a distance;
a central support member sealed to the chamber body and the lower electrode; and a plasma screen supported by the lower electrode and extending along a periphery of the substrate support assembly; an upper liner having an inner wall that maintains an overlap with the plasma screen as the first actuation device moves the lower electrode to protect the substrate support assembly during processing; and an exhaust assembly defining an evacuation region with the chamber body, wherein the chamber body includes a plurality of passages symmetrically disposed about a central axis of the substrate support assembly fluidly connecting the processing region with the evacuation region.

16 . The plasma processing apparatus of claim 15 , wherein the chamber body has an exhaust port formed therethrough that is symmetric about the central axis of the substrate support assembly.

17 . The plasma processing apparatus of claim 15 , further comprising a second actuation device coupled to a lift pin plate and configured to vertically move a plurality of lift pins.

18 . The plasma processing apparatus of claim 17 , wherein the second actuation device comprises;
a lead screw coupled to the lift pin plate; and an actuator configured to advance and retract the lead screw.

19 . The plasma processing apparatus of claim 18 , wherein the lead screw extends within the support pedestal.

20 . The plasma processing apparatus of claim 17 , wherein the lift pin plate is disposed to be within an opening within the lower electrode.

Assignees

• Applied Materials Inc

Inventors

• Carducci James D
• Tavassoli Hamid
• Balakrishna Ajit
• Chen Zhigang
• Nguyen Andrew
• Buchberger Jr Douglas A
• Ramaswamy Kartik
• Rauf Shahid
• Collins Kenneth S

Classifications

• H01J37/3244 Primary

  Gas supply means · CPC title

• H01J2237/334

  Etching · CPC title

• H01J37/32834 Primary

  Exhausting · CPC title

• H01J37/32715

  Workpiece holder · CPC title

• H01J2237/3321

  CVD [Chemical Vapor Deposition] · CPC title