Method and apparatus for processing a substrate

Patent metadata

Field	Value
Publication number	US-2020161095-A1
Application number	US-202016749631-A
Country	US
Kind code	A1
Filing date	Jan 22, 2020
Priority date	Jan 9, 2017
Publication date	May 21, 2020
Grant date	—

Abstract

Embodiments of a method and apparatus for annealing a substrate are disclosed herein. In some embodiments, a substrate anneal chamber includes a chamber body having a chamber wall and an interior volume; a lamp assembly disposed in the interior volume and having a plurality of lamps configured to heat a substrate; a slit valve disposed through a wall of the chamber body and above the lamp assembly to allow the substrate to pass into and out of the interior volume; an annular lamp assembly having at least one lamp disposed in a processing volume in an upper portion of the substrate anneal chamber above the slit valve; and a top reflector disposed above the annular lamp assembly to define an upper portion of the processing volume and to reflect radiation downwards towards the lamp assembly, wherein a bottom surface of the top reflector is exposed to the interior volume.

First claim

1 . A substrate anneal chamber, comprising:
a chamber body having a chamber wall and an interior volume; a lamp assembly disposed in the interior volume and having a plurality of lamps configured to heat a substrate, wherein the lamp assembly is coupled to a shaft which supports the lamp assembly; a plurality of lift pins extending through the lamp assembly to support the substrate in a spaced apart relation to the plurality of lamps; a slit valve disposed through a wall of the chamber body and above the lamp assembly to allow the substrate to pass into and out of the interior volume; an annular lamp assembly having at least one lamp disposed in a processing volume in an upper portion of the substrate anneal chamber above the slit valve; and a top reflector disposed above the annular lamp assembly to define an upper portion of the processing volume and to reflect radiation downwards towards the lamp assembly, wherein a bottom surface of the top reflector is exposed to the interior volume of the chamber body.

2 . The substrate anneal chamber of claim 1 , wherein the at least one lamp includes one annular lamp.

3 . The substrate anneal chamber of claim 1 , wherein the at least one lamp includes two semicircular lamps.

4 . The substrate anneal chamber of claim 1 , wherein the annular lamp assembly includes an upper annular reflector disposed above the at least one lamp and a lower annular reflector disposed beneath the at least one lamp, and wherein the upper annular reflector and the lower annular reflector are configured to reflect radiation from the at least one lamp towards a substrate disposed atop the plurality of lift pins.

5 . The substrate anneal chamber of claim 4 , wherein the lower annular reflector includes an annular coolant channel.

6 . The substrate anneal chamber of claim 4 , wherein the lower annular reflector includes a lamp facing surface that extends upwards and radially outwards.

7 . The substrate anneal chamber of claim 1 , wherein the top reflector includes a recess on a processing volume facing side, and wherein a width of the recess is greater than a width of the slit valve.

8 . The substrate anneal chamber of claim 1 , wherein the lamp assembly includes a reflective plate disposed beneath the plurality of lamps and configured to reflect radiation from the plurality of lamps towards the substrate.

9 . The substrate anneal chamber of claim 1 , wherein the plurality of lamps includes halogen lamps and has a total power output between about 2.25 kW and about 9.5 kW.

10 . The substrate anneal chamber of claim 9 , wherein the plurality of lamps includes an inner array of lamps and an independently controllable outer array of lamps.

11 . A substrate anneal chamber, comprising:
a chamber body having a chamber wall and an interior volume; a lamp assembly disposed in the interior volume and having a plurality of lamps configured to heat a substrate; a slit valve disposed through a wall of the chamber body and above the lamp assembly to allow the substrate to pass into and out of the interior volume; an annular lamp assembly having at least one lamp disposed in a processing volume in an upper portion of the substrate anneal chamber above the slit valve; and a top reflector disposed above the annular lamp assembly, wherein a bottom surface of the top reflector is exposed to the interior volume of the chamber body.

12 . The substrate anneal chamber of claim 11 , wherein the at least one lamp includes one annular lamp or two semicircular lamps.

13 . The substrate anneal chamber of claim 11 , wherein a plurality of lift pins extending through the lamp assembly to support the substrate in a spaced apart relation to the plurality of lamps.

14 . The substrate anneal chamber of claim 11 , further comprising a cap disposed atop the top reflector.

15 . The substrate anneal chamber of claim 11 , wherein the annular lamp assembly includes at least one lamp disposed between an upper annular reflector and a lower annular reflector.

16 . A method of processing a substrate, comprising:
receiving a substrate to be processed; raising the substrate to a processing position; sputtering a sputtering target to deposit material on the substrate; and rapidly heating the substrate to anneal the material deposited on the substrate.

17 . The method of claim 16 , wherein sputtering and rapidly heating the substrate are performed in the same chamber, and wherein the substrate is disposed on a quartz plate and is rapidly heated by a plurality of lamps disposed beneath the quartz plate.

18 . The method of claim 16 , wherein rapidly heating the substrate comprises:
transferring the substrate to an anneal chamber having an annular lamp assembly disposed above the substrate, a plurality of lamps disposed beneath the substrate, and a plurality of reflectors configured to reflect radiation towards the substrate.

19 . The method of claim 18 , wherein the plurality of reflectors comprises:
a top reflector disposed above the annular lamp assembly to reflect radiation downwards towards the substrate; an upper annular reflector disposed above at least one lamp of the annular lamp assembly; and a lower annular reflector disposed beneath the at least one lamp to reflect radiation upwards towards the upper annular reflector, which reflects the radiation downwards towards the substrate.

20 . The method of claim 16 , wherein raising the substrate to a processing position comprises using a substrate lift that includes lift pins mounted on a platform connected to a lift mechanism for raising the substrate lift.

Assignees

• Applied Materials Inc

Inventors

• Swaminathan Bharath
• Wu Hanbing
• Mazzocco John

Classifications

• C23C14/541

  Heating or cooling of the substrates · CPC title

• C23C14/5806

  Thermal treatment · CPC title

• H01J2237/332

  Coating · CPC title

• H01J37/3411

  Constructional aspects of the reactor · CPC title

• H01J37/32522 Primary

  Temperature · CPC title