Semiconductor memory device of three-dimensional structure

Patent metadata

Field	Value
Publication number	US-2020152573-A1
Application number	US-202016747171-A
Country	US
Kind code	A1
Filing date	Jan 20, 2020
Priority date	Oct 16, 2017
Publication date	May 14, 2020
Grant date	—

Abstract

A semiconductor memory device includes a memory chip defined with a first pad on one surface thereof; and a circuit chip defined with a second pad which is coupled with the first pad, on one surface thereof bonded with the one surface of the memory chip. The memory chip comprising: a memory cell array; a bit line disposed in a first wiring layer between the one surface and the memory cell array, and separated into a first bit line section and a second bit line section; and a power pad disposed in a space between the first bit line section and the second bit line section in the first wiring layer, and coupled with the first pad.

First claim

What is claimed is:

1 . A semiconductor memory device comprising:
a memory chip defined with a first pad on one surface thereof; and a circuit chip defined with a second pad which is coupled with the first pad, on one surface thereof bonded with the one surface of the memory chip, the memory chip comprising: a memory cell array; a bit line disposed in a first wiring layer between the one surface and the memory cell array, and separated into a first bit line section and a second bit line section; and a power pad disposed in a space between the first bit line section and the second bit line section in the first wiring layer, and coupled with the first pad.

2 . The semiconductor memory device according to claim 1 , further comprising:
an external coupling pad disposed on the other surface of the memory chip which faces away from the one surface, and provided with power from an external device; and a power coupling contact passing through the memory cell array, and coupling the power pad and the external coupling pad.

3 . The semiconductor memory device according to claim 2 , wherein
the circuit chip includes a peripheral circuit which is coupled to the second pad, and the external coupling pad, the power coupling contact, the power pad, the first pad and the second pad configure a power transmission path for transferring power received from the external device, to the peripheral circuit.

4 . The semiconductor memory device according to claim 2 , wherein
the memory cell array includes a memory block and a dummy block through which the power coupling contact passes, the memory block includes a plurality of gate electrode layers and a plurality of first interlayer dielectric layers which are alternately stacked, and vertical channels which pass through the plurality of gate electrode layers and the plurality of first interlayer dielectric layers stacked alternately, and the dummy block includes a plurality of dummy gate electrode layers and a plurality of second interlayer dielectric layers which are alternately stacked.

5 . The semiconductor memory device according to claim 4 , wherein the memory block and the dummy block are arranged in an extending direction of the bit line.

6 . The semiconductor memory device according to claim 4 , further comprising:
a coupling line disposed on the dummy block, and extending in a direction parallel to the bit line; a first contact coupling the first bit line section and one end of the coupling line; and a second contact coupling the second bit line section and the other end of the coupling line.

7 . The semiconductor memory device according to claim 6 , wherein the coupling line has the same width as the bit line.

8 . The semiconductor memory device according to claim 2 , wherein
the memory chip further includes a semiconductor layer which supports the memory cell array, and the semiconductor layer includes an opening which accommodates an isolation dielectric layer through which the power coupling contact passes.

9 . The semiconductor memory device according to claim 1 , wherein a width of the power pad in a direction perpendicular to the extending direction of the bit line is larger than a width of the bit line.

10 . A semiconductor memory device comprising:
a memory chip defined with a plurality of first pads on one surface thereof; and a circuit chip defined with a plurality of second pads which are coupled with the plurality of first pads, on one surface thereof bonded with the one surface of the memory chip, the memory chip comprising: a memory cell array including a plurality of memory blocks and a plurality of dummy blocks; a plurality of bit lines disposed in a first wiring layer between the one surface and the memory cell array, and each cut over a corresponding dummy block; and a plurality of power pads disposed in spaces in the first wiring layer, respectively, which are provided by cut bit lines, and coupled with the first pads, respectively.

11 . The semiconductor memory device according to claim 10 , wherein the power pads are arranged in an oblique direction that intersects with an extending direction of the bit lines and an arrangement direction of the bit lines.

12 . The semiconductor memory device according to claim 10 , further comprising:
a plurality of external coupling pads disposed on the other surface of the memory chip which faces away from the one surface, and provided with power from an external device; and a plurality of power coupling contacts passing through the dummy blocks, and coupling the power pads and the external coupling pads.

13 . The semiconductor memory device according to claim 10 , wherein
each of the memory blocks includes a plurality of gate electrode layers and a plurality of first interlayer dielectric layers which are alternately stacked, and vertical channels which pass through the plurality of gate electrode layers and the plurality of first interlayer dielectric layers stacked alternately, and each of the dummy blocks includes a plurality of dummy gate electrode layers and a plurality of second interlayer dielectric layers which are alternately stacked.

14 . The semiconductor memory device according to claim 10 , wherein the memory blocks and the dummy blocks are arranged in the extending direction of the bit lines.

15 . The semiconductor memory device according to claim 10 , wherein each of the bit lines includes a first bit line section and a second bit line section which are spaced apart from each other with one of the power pads interposed therebetween.

16 . The semiconductor memory device according to claim 15 , further comprising:
a plurality of coupling lines disposed on the dummy blocks, and extending in a direction parallel to the bit lines; a plurality of first contacts coupling first bit line sections of the bit lines and one ends of the coupling lines; and a plurality of second contacts coupling second bit line sections of the bit lines and the other ends of the coupling lines.

17 . The semiconductor memory device according to claim 16 , wherein the coupling lines have the same pitch as the bit lines.

18 . The semiconductor memory device according to claim 12 , wherein
the memory chip further includes a semiconductor layer which supports the memory blocks and the dummy blocks, and the semiconductor layer includes openings which accommodate isolation dielectric layers through which the power coupling contacts pass.

19 . The semiconductor memory device according to claim 10 , wherein a width of each of the power pads in a direction perpendicular to the extending direction of the bit lines is larger than a width of each of the bit lines.

20 . A semiconductor memory device comprising:
a first pad defined on one surface; an external coupling pad defined on the other surface which faces away from the one surface; a memory cell array disposed between the one surface and the other surface, and including a memory block and a dummy block; a bit line disposed in a first wiring layer between the memory cell array and the one surface, and separated into a first bit line section and a second bit line section by being cut over the dummy block; a power pad disposed in a space in the first wiring layer, which is provided by the cut bit line, and coupled with the first pad; and a power coupling contact passing through the dummy block, and coupling the power pad and the external coupling pad.

21 . The semiconductor memo

Assignees

• Sk Hynix Inc

Inventors

• Oh Sung-Lae
• Kim Dong-Hyuk
• Jung Soo-Nam

Classifications

• H10W80/00

  Direct bonding of chips, wafers or substrates · CPC title

• G11C7/18

  Bit line organisation; Bit line lay-out · CPC title

• H01L23/5283

  Electricity · mapped topic

• H01L27/11565

  Electricity · mapped topic

• H01L27/11529

  Electricity · mapped topic