Computationally Efficient X-ray Based Overlay Measurement

US2020116655A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2020116655-A1
Application numberUS-201916717475-A
CountryUS
Kind codeA1
Filing dateDec 17, 2019
Priority dateApr 28, 2015
Publication dateApr 16, 2020
Grant date

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Abstract

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Methods and systems for performing overlay and edge placement errors of device structures based on x-ray diffraction measurement data are presented. Overlay error between different layers of a metrology target is estimated based on the intensity variation within each x-ray diffraction order measured at multiple, different angles of incidence and azimuth angles. The estimation of overlay involves a parameterization of the intensity modulations of common orders such that a low frequency shape modulation is described by a set of basis functions and a high frequency overlay modulation is described by an affine-circular function including a parameter indicative of overlay. In addition to overlay, a shape parameter of the metrology target is estimated based on a fitting analysis of a measurement model to the intensities of the measured diffraction orders. In some examples, the estimation of overlay and the estimation of one or more shape parameter values are performed simultaneously.

First claim

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What is claimed is: 1 . An overlay metrology target comprising: a first structure disposed in a first layer fabricated at a first height above a surface of a planar substrate; and a second structure disposed in a second layer fabricated at a second height above the surface of the planar substrate such that the second structure is offset from the first structure in a first direction parallel to the surface of the planar substrate by a first overlay parameter value, wherein the first structure, the second structure, or both, are asymmetrical, and wherein the overlay metrology target diffracts incident x-ray radiation from multiple, different angles of incidence and multiple, different azimuth angles such that a measured intensity associated with each x-ray diffraction order of a plurality of diffraction orders is modulated. 2 . The overlay metrology target of claim 1 , further comprising: a third structure disposed in a third layer fabricated at a third height above the surface of the planar substrate such that the third structure is offset from the first structure and the second structure in the first direction parallel to the surface of the planar substrate by a second overlay parameter value and and a third overlay parameter value, respectively, wherein a first separation distance between the first and second heights, a second separation distance between the first and third heights, and a third separation distance between the second and third heights are each different, independent distances. 3 . The overlay metrology target of claim 1 , wherein the first structure is periodic with a first periodicity, and wherein the second structure is periodic with a second periodicity, wherein the first periodicity and the second periodicity are selected such that a first diffraction order number associated with the first structure constructively interferes with a second diffraction order number associated with the second structure. 4 . The overlay metrology target of claim 3 , wherein a direction of the periodicity of the first structure is aligned with a direction of periodicity of the second structure. 5 . The overlay metrology target of claim 1 , wherein the first structure is periodic with a first periodicity, and wherein the second structure is periodic with a second periodicity, wherein the first periodicity is a first integer multiple of a constant value and the second periodicity is a second integer multiple of the constant value. 6 . The overlay metrology target of claim 1 , wherein the first structure, the second structure, or both, is not periodic. 7 . The overlay metrology target of claim 1 , wherein the overlay metrology target is a design rule target. 8 . The overlay metrology target of claim 1 , wherein the overlay metrology target is disposed in-die. 9 . The overlay metrology target of claim 1 , wherein the first structure is spatially periodic in at least one direction parallel to a planar surface of the planar substrate. 10 . The overlay metrology target of claim 1 , wherein the first structure, the second structure, or both, is spatially periodic in two directions. 11 . The overlay metrology target of claim 10 , wherein the two directions are orthogonal. 12 . An overlay metrology target comprising: a first structure disposed in a first layer fabricated at a first height above a surface of a planar substrate; and a second structure disposed in a second layer fabricated at a second height above the surface of the planar substrate such that the second structure is offset from the first structure in a first direction parallel to the surface of the planar substrate by a first overlay parameter value, wherein the first structure is spatially periodic in a first direction, wherein the second structure is spatially periodic in a second direction different from the first direction, and wherein the overlay metrology target diffracts incident x-ray radiation from multiple, different angles of incidence and multiple, different azimuth angles such that a measured intensity associated with each x-ray diffraction order of a plurality of diffraction orders is modulated. 13 . The overlay metrology target of claim 12 , further comprising: a third structure disposed in a third layer fabricated at a third height above the surface of the planar substrate such that the third structure is offset from the first structure and the second structure in the first direction parallel to the surface of the planar substrate by a second overlay parameter value and and a third overlay parameter value, respectively, wherein a first separation distance between the first and second heights, a second separation distance between the first and third heights, and a third separation distance between the second and third heights are each different, independent distances. 14 . The overlay metrology target of claim 12 , wherein the first structure is periodic with a first periodicity, and wherein the second structure is periodic with a second periodicity, wherein the first periodicity is a first integer multiple of a constant value and the second periodicity is a second integer multiple of the constant value. 15 . The overlay metrology target of claim 12 , wherein the overlay metrology target is a design rule target. 16 . The overlay metrology target of claim 12 , wherein the overlay metrology target is disposed in-die. 17 . The overlay metrology target of claim 12 , wherein the first structure, the second structure, or both, is spatially periodic in two directions. 18 . The overlay metrology target of claim 17 , wherein the two directions are orthogonal. 19 . An overlay metrology target comprising: a first structure disposed in a first layer fabricated at a first height above a surface of a planar substrate; and a second structure disposed in a second layer fabricated at a second height above the surface of the planar substrate such that the second structure is offset from the first structure in a first direction parallel to the surface of the planar substrate by a first overlay parameter value, wherein the first structure is spatially periodic with a first periodicity that is a first integer multiple of a constant value, wherein the second structure is spatially periodic with a second periodicity that is a second integer multiple of the constant value, and wherein the overlay metrology target diffracts incident x-ray radiation from multiple, different angles of incidence and multiple, different azimuth angles such that a measured intensity associated with each x-ray diffraction order of a plurality of diffraction orders is modulated. 20 . The overlay metrology target of claim 19 , further comprising: a third structure disposed in a third layer fabricated at a third height above the surface of the planar substrate such that the third structure is offset from the first structure and the second structure in the first direction parallel to the surface of the planar substrate by a second overlay parameter value and a third overlay parameter value, respectively, wherein a first separation distance between the first and second heights, a second separation distance between the first and third heights, and a third separation distance between the second and third heights are each different, independent distances.

Assignees

Inventors

Classifications

  • patterned objects; electronic devices · CPC title

  • G01N23/207Primary

    Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions · CPC title

  • Constructional details of analysers, e.g. characterised by X-ray source, detector or optical system; Accessories therefor; Preparing specimens therefor (monochromators for X- rays using crystals G21K1/06) · CPC title

  • Devices having a multilayer structure · CPC title

  • Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching · CPC title

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What does patent US2020116655A1 cover?
Methods and systems for performing overlay and edge placement errors of device structures based on x-ray diffraction measurement data are presented. Overlay error between different layers of a metrology target is estimated based on the intensity variation within each x-ray diffraction order measured at multiple, different angles of incidence and azimuth angles. The estimation of overlay involve…
Who is the assignee on this patent?
Kla Corp
What technology area does this patent fall under?
Primary CPC classification G01N23/207. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu Apr 16 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).