Modular array of vertically integrated superconducting qubit devices for scalable quantum computing
US-2016364653-A1 · Dec 15, 2016 · US
US2020035902A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2020035902-A1 |
| Application number | US-201816047192-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 27, 2018 |
| Priority date | Jul 27, 2018 |
| Publication date | Jan 30, 2020 |
| Grant date | — |
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Techniques for a quantum device with modular quantum building blocks are provided. In one embodiment, a device is provided that comprises a substrate that is coupled with a plurality of qubit pockets, where at least one qubit pocket of the plurality of qubit pockets is coupled with a qubit. In one implementation, the device can further comprise a plurality of connectors coupled to the substrate and positioned around at least a portion of the substrate, where the plurality of connectors comprising a connecting element. In one or more implementations, the device can further comprise a plurality of transmission lines formed on the substrate and connect at least one connector of the plurality of connectors to at least one qubit pocket of the plurality of qubit pockets.
Opening claim text (preview).
What is claimed is: 1 . A device, comprising: a substrate having a plurality of qubit pockets, wherein at least one qubit pocket of the plurality of qubit pockets is provided with a qubit; a plurality of connectors coupled to the substrate and positioned around at least a portion of the substrate, wherein the plurality of connectors comprising a connecting element; and a plurality of transmission lines formed on the substrate and connect at least one connector of the plurality of connectors to at least one qubit pocket of the plurality of qubit pockets. 2 . The device of claim 1 , wherein the plurality of connectors are arranged on the substrate with a separation gap to maintain crosstalk below −50 decibels. 3 . The device of claim 1 , wherein the plurality of connectors are arranged on the substrate with a separation gap of at least 3 millimeters between the connecting element of the plurality of connectors. 4 . The device of claim 1 , wherein the connecting element is a wire bond. 5 . The device of claim 1 , wherein the connecting element is a vertical interconnect access. 6 . The device of claim 1 , wherein the substrate is composed of a dielectric material selected from the group consisting of Sapphire and Silicon and Gallium Arsenide. 7 . The device of claim 1 , wherein at least one transmission line of the plurality of transmission lines is a coplanar waveguide. 8 . The device of claim 1 , wherein at least one transmission line of the plurality of transmission lines is comprised of a microstrip material. 9 . The device of claim 1 , wherein at least one qubit pocket of the plurality of qubit pockets is coupled to the substrate using a coplanar waveguide. 10 . A method, comprising: providing a substrate with a plurality of qubit pockets; providing at least one qubit pocket of the plurality of qubit pockets with a qubit; coupling a plurality of connectors to the substrate and positioning the plurality of connectors around at least a portion of the substrate, wherein the plurality of connectors comprising a connecting element; and forming a plurality of transmission lines on the substrate and arranging the plurality of transmission lines to connect at least one connector of the plurality of connectors to at least one qubit pocket of the plurality of qubit pockets. 11 . The method of claim 10 , further comprising: arranging the plurality of connectors on the substrate with a separation gap between the plurality of connectors to maintain crosstalk below −50 decibels. 12 . The method of claim 10 , further comprising: arranging the plurality of connectors on the substrate with a separation gap of at least 3 millimeters between the connecting element of the plurality of connectors. 13 . The method of claim 10 , wherein the connecting element is a wire bond. 14 . The method of claim 10 , wherein the connecting element is a vertical interconnect access. 15 . The method of claim 10 , wherein the substrate is composed of a dielectric material selected from the group consisting of sapphire and silicon and gallium arsenide. 16 . The method of claim 10 , wherein at least one transmission line of the plurality of transmission lines is a coplanar waveguide. 17 . The method of claim 10 , wherein at least one transmission line of the plurality of transmission lines is comprised of a microstrip material. 18 . The method of claim 10 , further comprising: using a coplanar waveguide to couple the plurality of qubit pockets to the substrate. 19 . A structure, comprising: a device that is assembled with a plurality of quantum building blocks, wherein the plurality of quantum building blocks comprise a substrate, a plurality of connectors, a plurality of qubit pockets and a plurality of transmission lines; and a plurality of connecting elements coupled to the plurality of connectors, wherein the plurality of connecting elements transport quantum signals between the plurality of quantum building blocks. 20 . The structure of claim 19 , wherein at least one qubit pocket of the plurality of qubit pockets is coupled with a qubit. 21 . The structure of claim 19 , wherein the plurality of connecting elements are arranged with a separation gap between the plurality of connecting elements to maintain crosstalk below −50 decibels. 22 . A method, comprising: assembling a plurality of quantum building blocks comprising a substrate, a plurality of connectors, a plurality of qubits and a plurality of transmission lines; determining resistance levels of the plurality of qubits to determine communication frequencies of the plurality of qubits; and forming a quantum device by modularly connecting the plurality of quantum building blocks and arranging the plurality of quantum building blocks such that communication frequencies of the plurality of qubits are different for the plurality of quantum building blocks. 23 . The method of claim 22 , wherein forming the quantum device comprises using a plurality of connecting elements arranged with a separation gap of at least 3 millimeters between the plurality of connecting elements. 24 . A method, comprising: assembling a device with a plurality of quantum building blocks, wherein the plurality of quantum building blocks comprise a substrate, a plurality of connectors, a plurality of qubit pockets and a plurality of transmission lines; and coupling a plurality of connecting elements to the plurality of connectors, wherein the plurality of connecting elements transport quantum signals between the plurality of quantum building blocks. 25 . The method of claim 24 , further comprising: arranging the plurality of connecting elements with a separation gap between the plurality of connecting elements to maintain crosstalk below −50 decibels.
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