Encapsulated magnetic tunnel junction (mtj) structures

Patent metadata

Field	Value
Publication number	US-2020033425-A1
Application number	US-201816044616-A
Country	US
Kind code	A1
Filing date	Jul 25, 2018
Priority date	Jul 25, 2018
Publication date	Jan 30, 2020
Grant date	—

Abstract

Integrated circuits and methods for fabricating integrated circuits with magnetic tunnel junction (MTJ) structures are provided. An exemplary method for fabricating an integrated circuit includes forming a magnetic tunnel junction (MTJ) structure and conformally forming a metal oxide encapsulation layer over and around the MTJ structure. The method further includes removing a portion of the metal oxide encapsulation layer over MTJ structure. Also, the method includes forming a conductive via over and in electrical communication with the top surface of the MTJ structure.

First claim

The invention claimed is:

1 . A method comprising:
forming a passivation layer; forming a dielectric layer over the passivation layer, wherein the dielectric layer has an uppermost surface; forming a trench in the dielectric layer and the passivation layer; forming a conductive contact layer in the trench, wherein the conductive contact layer has an uppermost surface with a central portion and outer portions; forming a magnetic tunnel junction (MTJ) structure on the central portion of the conductive contact layer, wherein the MTJ structure has a first sidewall, a second sidewall, and a top surface extending from the first sidewall to the second sidewall; conformally depositing a titanium oxide encapsulation layer around on the first sidewall, the second sidewall, and the top surface of the MTJ structure, on the uppermost surface of the conductive contact layer, and on the uppermost surface of the dielectric layer, wherein the titanium oxide encapsulation layer includes a bottom surface that is coplanar with the uppermost surface of the conductive contact layer, and the bottom surface of the titanium oxide encapsulation layer directly contacts the outer portions of the uppermost surface of the conductive contact layer; depositing a dielectric material over the MTJ structure; etching the dielectric material to form a trench exposing the metal oxide encapsulation layer on the top surface of the MTJ structure; removing all of titanium oxide encapsulation layer from the top surface of the MTJ structure to expose the top surface of the MTJ structure; and after removing all of the titanium oxide encapsulation layer from the top surface of the MTJ structure to expose the top surface of MTJ structure, forming a conductive via in the trench that is in direct contact with the top surface of the MTJ structure.

2 . (canceled)

3 . The method of claim 1 wherein the titanium oxide encapsulation layer is conformally deposited using a physical vapor deposition (PVD) process.

4 . The method of claim 1 wherein conformally depositing the titanium oxide encapsulation layer on the first sidewall, the second sidewall, and the top surface of the MTJ structure comprises:
alternating depositing layers of titanium by a physical vapor deposition (PVD) process and oxidizing the layers of titanium to form titanium oxide layers.

5 . The method of claim 1 wherein conformally depositing the titanium oxide encapsulation layer on the first sidewall, the second sidewall, and the top surface of the MTJ structure comprises:
sputtering titanium oxide.

6 . The method of claim 1 wherein the titanium oxide encapsulation layer has a thickness of about 5 nm to about 50 nm.

7 - 17 . (canceled)

18 . A structure comprising:
a passivation layer; a dielectric layer on the passivation layer, the dielectric layer having an uppermost surface; a conductive contact layer located in an opening in the dielectric layer and the passivation layer, the conductive contact layer having an uppermost surface including a central portion and outer portions; a magnetic tunnel junction (MTJ) structure overlying the central portion of the conductive contact layer, the MTJ structure having a first sidewall, a second sidewall, and a top surface extending from the first sidewall to the second sidewall; a conductive via over and in direct contact with the central portion of the MTJ structure; and a titanium oxide encapsulation layer on the first sidewall, the second sidewall, and the top surface of the MTJ structure, on the outer portions of the uppermost surface of the conductive contact layer, and on the uppermost surface of the dielectric layer.

19 . The structure of claim 18 wherein the MTJ structure includes a top electrode layer, MTJ layers, and a bottom electrode layer, and the MTJ layers are completely surrounded and directly contacted by the top electrode, the titanium oxide encapsulation layer, and the bottom electrode layer.

20 . The structure of claim 18 , wherein:
the dielectric layer has an uppermost surface coplanar with the uppermost surface of the conductive contact layer; the MTJ structure has opposite sidewalls; and the titanium oxide encapsulation layer directly contacts the sidewalls of the MTJ structure and the uppermost surface of the dielectric layer.

21 . The structure of claim 18 wherein the passivation layer is comprised of a silicon carbide-based passivation material including nitrogen.

22 . The structure of claim 18 wherein the uppermost surface of the conductive contact layer is coplanar with the dielectric layer.

23 . The structure of claim 18 wherein the titanium oxide encapsulation layer has a thickness of about 5 nm to about 50 nm.

24 . The structure of claim 18 wherein the titanium oxide encapsulation layer has a thickness of about 10 nm to about 20 nm.

25 . A structure comprising:
a dielectric layer; a conductive contact layer located in an opening in the dielectric layer, the conductive contact layer having an uppermost surface including a central portion and outer portions; a magnetic tunnel junction (MTJ) structure overlying the central portion of the conductive contact layer, the MTJ structure having a first sidewall, a second sidewall, and a top surface extending from the first sidewall to the second sidewall; a conductive via over and in direct contact with the central portion of the MTJ structure; and a titanium oxide encapsulation layer on the first sidewall, the second sidewall, and the top surface of the MTJ structure, on the outer portions of the uppermost surface of the conductive contact layer, and on the uppermost surface of the dielectric layer, the titanium oxide encapsulation layer including a bottom surface that is coplanar with the uppermost surface of the conductive contact layer, and the bottom surface of the titanium oxide encapsulation layer directly contacting the outer portions of the uppermost surface of the conductive contact layer.

26 . The structure of claim 25 wherein the dielectric layer has an uppermost surface, and the uppermost surface of the conductive contact layer is coplanar with the uppermost surface of the dielectric layer.

27 . The structure of claim 25 wherein the titanium oxide encapsulation layer has a thickness of about 5 nm to about 50 nm.

28 . The structure of claim 25 wherein the titanium oxide encapsulation layer has a thickness of about 10 nm to about 20 nm.

Assignees

• Globalfoundries Sg Pte Ltd

Inventors

• Wang Chenchen Jacob
• Tahmasebi Taiebeh
• Rajan Ganesh Kolliyil
• Houssameddine Dimitri
• Tran Michael Nicolas Albert

Classifications

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title

• B82Y25/00

  Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance · CPC title

• H01F41/308

  lift-off processes, e.g. ion milling, for trimming or patterning · CPC title

• G01R33/098 Primary

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title

• G01R33/0052 Primary

  Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips (devices based on galvano-magnetic effect or the like H10N50/85) · CPC title