Magnetic tunnel junction (mtj) device and forming method thereof
US-2020227471-A1 · Jul 16, 2020 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01F41/308 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 173 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 6 |
| 2016 | 10 |
| 2017 | 9 |
| 2018 | 4 |
| 2019 | 27 |
| 2020 | 31 |
| 2021 | 32 |
| 2022 | 11 |
| 2023 | 20 |
| 2024 | 15 |
| 2025 | 8 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Self-Aligned Encapsulation Hard Mask to Separate Physically Under-Etched MTJ Cells to Reduce Conductive R-Deposition
US-2020066972-A1 · Feb 27, 2020 · US
Ultrasensitive magnetic tunneling junction sensor
US-2020049775-A1 · Feb 13, 2020 · US
Magnetic random access memory and manufacturing method thereof
US-10541361-B2 · Jan 21, 2020 · US
Under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch process
US-10522741-B1 · Dec 31, 2019 · US
MTJ CD variation by HM trimming
US-10522751-B2 · Dec 31, 2019 · US
Method for producing tunnel magnetoresistive element
US-2019393411-A1 · Dec 26, 2019 · US
Sub 60nm Etchless MRAM Devices by Ion Beam Etching Fabricated T-Shaped Bottom Electrode
US-2019386211-A1 · Dec 19, 2019 · US
Under-Cut Via Electrode for Sub 60nm Etchless MRAM Devices by Decoupling the Via Etch Process
US-2019386201-A1 · Dec 19, 2019 · US
Mtj cd variation by hm trimming
US-2019363248-A1 · Nov 28, 2019 · US
Devices for manipulating magnetic particles, and methods of fabricating the devices and the use thereof
US-10478827-B2 · Nov 19, 2019 · US
Reduction of Capping Layer Resistance Area Product for Magnetic Device Applications
US-2019288189-A1 · Sep 19, 2019 · US
Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrode
US-10418547-B1 · Sep 17, 2019 · US
Magnetic memory devices
US-10396277-B2 · Aug 27, 2019 · US
Mtj stack etch using ibe to achieve vertical profile
US-2019259939-A1 · Aug 22, 2019 · US
Method for manufacturing high density magnetic random access memory devices using diamond like carbon hard mask
US-10388860-B2 · Aug 20, 2019 · US
Embedded mask patterning process for fabricating magnetic media and other structures
US-10347467-B2 · Jul 9, 2019 · US
Method for manufacturing high density magnetic random access memory devices using diamond like carbon hard mask
US-2019207106-A1 · Jul 4, 2019 · US
Vertically-strained silicon device for use with a perpendicular magnetic tunnel junction (pmtj)
US-2019206940-A1 · Jul 4, 2019 · US
Method for manufacturing reduced pitch magnetic random access memory pillar
US-2019207107-A1 · Jul 4, 2019 · US
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Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01F41/308?
- CPC H01F41/308 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01F41/308 (Electricity)?
- Our database includes 173 publications tagged with this CPC code.
- Is patent activity under CPC H01F41/308 growing?
- Publication counts under this code: 15 in 2024 vs 8 in 2025 (latest complete years).