Semiconducting Layer Production Process
US-2016013434-A1 · Jan 14, 2016 · US
US2020028099A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2020028099-A1 |
| Application number | US-201816117290-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 30, 2018 |
| Priority date | Nov 26, 2013 |
| Publication date | Jan 23, 2020 |
| Grant date | — |
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Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes, the active layer having perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.
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1 - 30 . (canceled) 31 . A photovoltaic device comprising: a first electrode; a second electrode comprising carbon; an active layer disposed at least partially between the first and second electrodes, the active layer comprising: photoactive material comprising a perovskite material; and an interfacial layer comprising NiO; and wherein the second electrode is disposed adjoining the perovskite material. 32 . The photovoltaic device of claim 31 , wherein the carbon comprises carbon allotropes selected from the group consisting of graphite, graphene, fullerenes, carbon nanotubes, and combinations thereof. 33 . The photovoltaic device of claim 31 , wherein the perovskite material has the formula CMX 3 , wherein C comprises one or more cations each selected from the group consisting of Group 1 metals, Group 2 metals, organic cations, and combinations thereof; wherein M comprises one or more metals each selected from the group consisting of Fe, Co, Ni, Cu, Sn, Pb, Bi, Ge, Ti, Zn, and combinations thereof; and wherein X comprises one or more anions each selected from the group consisting of halides, group 16 anions, and combinations thereof. 34 . The photovoltaic device of claim 31 , wherein the second electrode comprises graphite. 35 . The photovoltaic device of claim 31 , wherein the second electrode comprises graphene. 36 . The photovoltaic device of claim 31 , wherein the second electrode comprises fullerenes. 37 . The photovoltaic device of claim 31 , wherein the second electrode comprises carbon nanotubes. 38 . The photovoltaic device of claim 31 , wherein the second electrode further comprises a second electrode material. 39 . The photovoltaic device of claim 31 , wherein the second electrode further comprises one or more materials selected from the group consisting of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), cadmium oxide (CdO), zinc indium tin oxide (ZITO), aluminum zinc oxide (AZO), aluminum (Al), gold (Au), calcium (Ca), magnesium (Mg), titanium (Ti), steel, and combinations thereof. 40 . The photovoltaic device of claim 31 , wherein the second electrode further comprises indium tin oxide (ITO). 41 . The photovoltaic device of claim 31 , wherein the second electrode further comprises aluminum (Al). 42 . The photovoltaic device of claim 31 , wherein the second electrode further comprises aluminum zinc oxide (AZO). 43 . The photovoltaic device of claim 31 , wherein the second electrode further comprises zinc indium tin oxide (ZITO). 44 . The photovoltaic device of claim 31 , wherein the second electrode further comprises fluorine-doped tin oxide (FTO). 45 . The photovoltaic device of claim 31 , wherein the perovskite material is disposed at least partially between and in contact with each of the interfacial layer and the second electrode. 46 . The photovoltaic device of claim 31 , wherein the active layer further comprises a second interfacial layer disposed between the second electrode and the perovskite material. 47 . The photovoltaic device of claim 46 , wherein the perovskite material is disposed at least partially between and in contact with the first interfacial layer and the second interfacial layer. 48 . A photovoltaic device comprising: a first electrode; a second electrode comprising carbon; an active layer disposed at least partially between the first and second electrodes, the active layer comprising NiO interfacial layer and a perovskite material, wherein the perovskite material has the formula CMX 3 , and is disposed between the NiO interfacial layer and the second electrode; wherein C comprises one or more cations each selected from the group consisting of Group 1 metals, Group 2 metals, organic cations, and combinations thereof; wherein M comprises one or more metals each selected from the group consisting of Fe, Co, Ni, Cu, Sn, Pb, Bi, Ge, Ti, Zn, and combinations thereof; and wherein X comprises one or more anions each selected from the group consisting of halides, group 16 anions, and combinations thereof; and wherein the second electrode is disposed adjoining the perovskite material. 49 . The photovoltaic device of claim 48 , wherein the carbon comprises carbon allotropes selected from the group consisting of graphite, graphene, fullerenes, carbon nanotubes, and combinations thereof. 50 . The photovoltaic device of claim 48 , wherein the second electrode comprises graphite. 51 . The photovoltaic device of claim 48 , wherein the second electrode comprises graphene. 52 . The photovoltaic device of claim 48 , wherein the second electrode comprises fullerenes. 53 . The photovoltaic device of claim 48 , wherein the second electrode comprises carbon nanotubes. 54 . The photovoltaic device of claim 48 , wherein the second electrode further comprises a second electrode material. 55 . The photovoltaic device of claim 48 , wherein the second electrode further comprises one or more materials selected from the group consisting of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), cadmium oxide (CdO), zinc indium tin oxide (ZITO), aluminum zinc oxide (AZO), aluminum (Al), gold (Au), calcium (Ca), magnesium (Mg), titanium (Ti), steel, and combinations thereof. 56 . The photovoltaic device of claim 48 , wherein the second electrode further comprises indium tin oxide (ITO). 57 . The photovoltaic device of claim 48 , wherein the second electrode further comprises aluminum (Al). 58 . The photovoltaic device of claim 48 , wherein the second electrode further comprises aluminum zinc oxide (AZO). 59 . The photovoltaic device of claim 48 , wherein the active layer further comprises a second interfacial layer disposed between and in contact with the second electrode and the perovskite material. 60 . The photovoltaic device of claim 60 , wherein the perovskite material is at least partially between and in contact with each of the first interfacial layer and second interfacial layer.
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