Semiconducting Layer Production Process

Patent metadata

Field	Value
Publication number	US-2016013434-A1
Application number	US-201414771584-A
Country	US
Kind code	A1
Filing date	Feb 28, 2014
Priority date	Mar 1, 2013
Publication date	Jan 14, 2016
Grant date	—

Abstract

The invention provides a process for producing a layer of a semiconductor material, wherein the process comprises: a) disposing on a substrate: i) a plurality of particles of a semiconductor material, ii) a binder, wherein the binder is a molecular compound comprising at least one metal atom or metalloid atom, and iii) a solvent; and b) removing the solvent. The invention also provides a layer of semiconductor material obtainable by this process. In a preferred embodiment, the particles of a semiconductor material comprise mesoporous particles of the semiconductor material or mesoporous single crystals of the semiconductor material. The invention provides a process for producing a compact layer of a semiconductor material, wherein the process comprises: disposing on a substrate i) a solvent, and ii) a molecular compound comprising at least one metal or metalloid atom and one or more groups of formula OR, wherein each R is the same or different and is an unsubstituted or substituted C 1 -C 8 hydrocarbyl group, and wherein two or more R groups may be bonded to each other; and b) removing the solvent. The invention also provides a compact layer of a semiconductor material obtainable by this process. These processes can be effectively performed at temperatures of less than 300° C. Further provided are semiconductor devices comprising either a layer of a semiconductor material or a compact layer of a semiconductor material obtainable by the processes of the invention. The invention also provides a process for producing a semiconductor device.

First claim

1 . A process for producing a layer of a semiconductor material, wherein the process comprises:
a) disposing on a substrate
i) a plurality of particles of a semiconductor material,
ii) a binder, wherein the binder is a molecular compound comprising at least one metal atom or metalloid atom, and
iii) a solvent; and
b) removing the solvent;
wherein either the layer of a semiconductor material is a compact layer of the semiconductor material and the particles of the semi conductor material are then nanoparticles of the semiconductor material, or the layer of a semiconductor material is a mesoporous layer of the semiconductor material and particles of the semiconductor material then comprise mesoporous particles of the semiconductor material.

2 . The process according to claim 1 wherein the process is carried out at a temperature less than or equal to 300° C., preferably at a temperature less than or equal to 200° C., and more preferably at a temperature less than or equal to 150° C.

3 . The process according to claim 1 wherein the binder is any of:
i) a molecular compound comprising at least one metal or metalloid atom and one or more atoms selected from O, S, Se and Te;
ii) a molecular compound comprising at least one metal or metalloid atom and one or more groups of formula XR, wherein
each X is the same or different and is an atom selected from O, S, Se and Te; and
each R is the same or different and is an unsubstituted or substituted C 1 -C 8 hydrocarbyl group, and wherein two or more R groups may be bonded to each other;

iii) a molecular compound with the formula [M a Y b (XR) c Z d ] wherein:
each M is the same or different and is a metal atom or a metalloid atom;
each X is fee same or different and is an atom selected from Q, S, Se, and Te;
each Y is the same or different and is an atom selected from Q, S, Se, and Te;
each Z is the same or different and is a monodentate group;
each R is the same or different and is an unsubstituted or substituted C 1 -C 8 hydrocarbyl group, wherein two or more R groups may be bonded to each other;
a is an integer from 1 to 4;
b is 0 or an integer from 1 to 7;
c is an integer from 1 to 16;
d is 0 or an integer from 1 to, 15; and
2b+c+d is less than or equal to the total valence of the one or more M atoms;

iv) a molecular compound with the formula [MO c (OR) f ] wherein:
M is a metal atom or a metalloid atom;
each R is the same or different and is an unsubstituted or substituted C 1 -C 8 hydrocarbyl group, wherein two or more R groups maybe bonded to each other;
e is 0 or an integer from 1 to 3;
f is an integer from 1 to 8; and
2e+f is equal to the valence of M; and

v) a molecular compound of formula (1)

wherein
M is a metal atom or a metalloid atom;
each R is the same or different and k an unsubstituted or substituted C 1 -C 8 hydrocarbyl group, wherein two or more R groups may be bonded to each other;
each R′ is the same or different and is H or an unsubstituted or substituted C 1 -C 3 hydrocarbyl group, wherein two or more R′ groups may be bonded to each other;
p is an integer from 1 to 4;
q is 0 or an integer from 1 to 6;
r is 0 or an integer from 1 to 3; and
2p+q+2r is equal Jo the valence of M.

4 . (canceled)

5 . A process according to claim 1 comprises:
a) disposing on the substrate
i) a first composition comprising the plurality of particles of a semiconductor material, and
ii) a second composition comprising the binder,
wherein at least one of the first and the second composition also comprises the solvent; and

b) removing the solvent;
preferably wherein the first composition further comprises the solvent which is a first solvent, and the second composition further comprises a second solvent, wherein the first and second solvents are the same or different and where step b) comprises removing the first and second solvents,
preferably wherein the first composition comprises the plurality of particles of a semiconductor material dispersed in the first solvent and the second composition comprises the binder dissolved in the second solvent.

6 . (canceled)

7 . A process according to claim 1 which comprises:
a) disposing on the substrate a composition comprising the solvent, the binder and the plurality of particles of a semiconductor material; and
b) removing the solvent;
preferably wherein the plurality of particles of a semiconductor material are suspended or dispersed in the solvent and the binder is dissolved in the solvent.

8 . (canceled)

9 . A process according to claim 1 wherein the amount of the plurality of particles of a semiconductor material present is from 0.05 to 20 wt %, and the amount of the binder is from 5 to 40 mol % relative to the amount of the semiconductor material.

10 . (canceled)

11 . A process according to claim 1 wherein the solvent is an organic solvent or, if first and second solvents are present, the first solvent is an organic solvent, the second solvent is an organic solvent, or both the first and second solvents are organic solvents;
preferably wherein the solvent or solvents are selected from an alcohol, a thiol, an ether, a ketone, an aldehyde, an alkane, a cycloalkane, an aromatic hydrocarbon, a heterocyclic compound, an aromatic heterocyclic compound, a halogenated hydrocarbon, or an amine;
optionally wherein the solvent or solvents are selected from methanol, ethanol, propanol, isopropanol, butanol, secbutanol, or tertbutanol.

12 - 13 . (canceled)

14 . A process according to claim 1 wherein the solvent is water or, if first and second solvents are present, the first solvent is water, the second solvent is water or both the first and second solvents are water.

15 - 21 . (canceled)

22 . A process according to claim 1 wherein the binder is selected from: titanium di(C 1 -C 8 -alkoxide) bis(acetylacetonate); niobium ethoxide; a metal compound comprising an acetylacetonate group, wherein the metal is selected from titanium, zirconium, vanadium, niobium, chromium, molybdenum, tungsten, manganese, rhenium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, zinc and aluminium; tetra(C 1 -C 8 -hydrocarbyl) orthosilicates; and tri(C 1 -C 8 -hydrocarbyl) borates;
preferably wherein fee binder is selected from titanium di-isopropoxide bis(acetylacetonate), vanadium acetylacetonate, niobium ethoxide, and tetraethyl orthosilicate.

23 - 24 . (canceled)

25 . A process according to claim 1 wherein the layer of a semiconductor material is a compact layer of the semiconductor material and the compact layer of the semiconductor material is a layer without open porosity;
preferably wherein the compact layer of a semiconductor material is substantially non-porous; and
optionally wherein the compact layer of the semiconductor material has a thickness of from 5 to 500 nm.

26 - 30 . (canceled)

31 . A process according to claim 1 wherein the particles of a semiconductor material are nanoparticles of the semiconductor material and wherein the of the semiconductor material are crystalline;
optionally wherein the nanoparticles of a semiconductor material have an average particle size of less than or equal to 10 nm; and
optionally wherein the particles of a semiconductor material are nanoparticles of anatase TiO 2 .

Assignees

• Isis Innovation

Inventors

• Snaith Henry James
• Crossland Edward James Williams
• Noel Nakita
• Sivaram Varun
• Leijtens Tomas

Classifications

• Y02E10/549

  Organic PV cells · CPC title

• H01G9/204

  comprising zinc oxides, e.g. ZnO (H01G9/2036 takes precedence) · CPC title

• H01G9/2031

  comprising titanium oxide, e.g. TiO2 (H01G9/2036 takes precedence) · CPC title

• H10K85/50

  Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3 · CPC title

• H10K30/50

  Photovoltaic [PV] devices · CPC title