Systems and methods for binary single-crystal growth

Patent metadata

Field	Value
Publication number	US-2020024767-A1
Application number	US-201816040035-A
Country	US
Kind code	A1
Filing date	Jul 19, 2018
Priority date	Jul 19, 2018
Publication date	Jan 23, 2020
Grant date	—

Abstract

Systems and methods for growth of multi-component single crystals are described. A first solution is flowed over a surface of a seed crystal coupled to a nozzle such that a plurality of first ions solvated in the first solution and a plurality of second ions in a second solution combine on the surface of the seed crystal to grow the single-crystal thereon. The first solution and the second solution are immiscible. A feed tank is fluidly coupled to the at least one nozzle and includes the first solution. In some aspects, the nozzle is configured to flow both the first solution and the second solution over the seed crystal.

First claim

What is claimed is:

1 . A system comprising:
a feed tank fluidly storing therein a first solution with a plurality of first ions solvated in the first solution; a crystal-growth vessel including at least one nozzle therein, the at least one nozzle being fluidly coupled to the feed tank, the at least one nozzle configured to flow the first solution over a surface of a seed crystal coupled to the at least one nozzle such that the plurality of first ions solvated in the first solution and a plurality of second ions in a second solution combine on the surface of the seed crystal to grow a binary single-crystal thereon, the first solution and the second solution being immiscible; and a pump configured to flow the first solution from the feed tank to the crystal-growth vessel via the at least one nozzle.

2 . The system of claim 1 , wherein the pump is a vacuum pump fluidly coupled to the crystal-growth vessel.

3 . The system of claim 1 , wherein the binary single-crystal is gallium nitride.

4 . The system of claim 1 , wherein the crystal-growth vessel includes therein a pool of the second solution, wherein the second solution wets the surface of the seed crystal through capillary action, and wherein the binary single-crystal grows via combining the plurality of first ions with the plurality of second ions at an interface between the first solution, the second solution, and the surface of the seed crystal.

5 . The system of claim 1 , wherein the feed tank includes therein the second solution, wherein the at least one nozzle is further configured to flow the second solution over the surface of the seed crystal simultaneously with flow of the first solution, and wherein growth of the binary single-crystal is via combining the plurality of first ions with the plurality of second ions at an interface between the first solution, the second solution, and the surface of the seed crystal through preferential vaporization of one of the first solution and the second solution.

6 . The system of claim 1 , wherein system is configured to maintain a temperature less than about 300° C. proximate the binary single-crystal.

7 . A method for growth of a binary single-crystal, the method comprising:
providing a seed crystal; supplying a first solution to a surface of the seed crystal, the first solution containing a plurality of first ions solvated therein; wetting the seed crystal with a second solution, the second solution containing a plurality of second ions solvated therein, the first solution and the second solution being immiscible; and growing the binary single-crystal via combining the plurality of first ions with the plurality of second ions at an interface between the first solution, the second solution, and the surface of the seed crystal.

8 . The method of claim 7 , wherein wetting includes contacting an end of the seed crystal with a pool of the second solution, the second solution having a second density that is less than a density of the first solution.

9 . The method of claim 7 , wherein the binary single-crystal is gallium nitride.

10 . The method of claim 7 , wherein the first solution includes an ionic solution and the second solution includes an organic solvent.

11 . The method of claim 7 , wherein the seed crystal is provided within a crystal-growth vessel under vacuum.

12 . The method of claim 7 , wherein growing the binary single-crystal is carried out at less than about 300° C.

13 . A method for binary single-crystal growth, the method comprising:
providing a seed crystal; flowing a two-component mixture over a surface of the seed crystal, the two-component mixture including a first solution and a second solution, the first solution and the second solution being immiscible, the first solution containing a plurality of first ions solvated therein, the second solution containing a plurality of second ions solvated therein, the first solution and the second solution having different vapor pressures; and growing a binary single-crystal via preferential vaporization of one of the first solution and the second solution to thereby combining the plurality of first ions with the plurality of second ions at an interface between the first solution, the second solution, and the surface of the seed crystal.

14 . The method of claim 13 , wherein the binary single-crystal is gallium nitride.

15 . The method of claim 13 , wherein the first solution includes an ionic liquid and the second solution includes an organic solvent.

16 . The method of claim 13 , wherein the seed crystal is provided within a crystal-growth vessel under vacuum.

17 . The method of claim 13 , wherein growing the binary single-crystal is carried out at less than about 300° C.

18 . A binary single-crystal precursor mixture comprising:
a first solution including: an ionic liquid including an azolium salt, and a metallic nitride solvated within the ionic liquid; and a second solution including an organic liquid with gallium cations solvated therein.

19 . The mixture of claim 18 , wherein the azolium salt has a diazolium cation.

20 . The mixture of claim 18 , wherein the azolium salt has a 1-butyl-3-methylimidazolium cation.

21 . The mixture of claim 18 , wherein the azolium salt has a superhalogen anion.

22 . The mixture of claim 18 , wherein the azolium salt has a fluorine-containing superhalogen anion.

23 . The mixture of claim 18 , wherein the first solution further includes an organic solvent, the organic solvent and the ionic liquid are miscible, and the organic solvent has a boiling point below 300° C.

24 . The mixture of claim 18 , wherein the first solution further includes a glycol ether configured to solvate a cation of the metallic nitride, the glycol ether being miscible within the ionic liquid.

Assignees

• Gm Global Tech Operations Llc

Inventors

• Liu Zhongyi
• Hector Jr Louis G
• Huang Xiaosong
• Pieczonka Nicholas P
• Rousseau Ingrid A
• Carpenter Michael K

Classifications

• C30B29/406 Primary

  Gallium nitride · CPC title

• C30B7/14 Primary

  the crystallising materials being formed by chemical reactions in the solution · CPC title

• C01B21/0632 Primary

  with gallium, indium or thallium · CPC title