Back-illuminated photoelectrochemical cell
US-2020291533-A1 · Sep 17, 2020 · US
Silicon photoanode comprising a thin and uniform protective layer made of transition metal dichalcogenide and method of manufacturing same
US2020002825A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2020002825-A1 |
| Application number | US-201916453010-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 26, 2019 |
| Priority date | Jun 27, 2018 |
| Publication date | Jan 2, 2020 |
| Grant date | — |
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Abstract
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There is described a silicon photoanode generally having a silicon-based substrate; and a protective layer covering the silicon-base substrate, the protective layer having a transition metal dichalcogenide (TMDC) material, being uniform and having a thickness below about 8 nm.
First claim
Opening claim text (preview).
What is claimed is: 1 . A silicon photoanode comprising: a silicon-based substrate; and a protective layer covering the silicon-base substrate, the protective layer having a transition metal dichalcogenide (TMDC) material, being uniform and having a thickness below about 8 nm. 2 . The silicon photoanode of claim 1 wherein the TMDC material is MoSe 2 . 3 . The silicon photoanode of claim 1 wherein the thickness is preferably below about 5 nm. 4 . The silicon photoanode of claim 3 wherein the thickness is most preferably below about 4 nm. 5 . The silicon photoanode of claim 1 wherein the thickness is above about 2 nm. 6 . The silicon photoanode of claim 1 wherein the protective layer has been deposited using a molecular beam epitaxy (MBE) technique. 7 . A method for manufacturing a silicon photoanode, the method comprising: applying a layer of transition metal dichalcogenide (TMDC) material on a silicon-based substrate using a molecular beam epitaxy (MBE) technique. 8 . The method of claim 7 , wherein said TMDC material is MoSe 2 , said applying comprising heating the silicon-based substrate to temperatures in the range of 200-450° C., introducing a Mo molecular beam under Se-rich conditions for about 18-180 minutes, with a deposition rate of about 0.01 Å/s for MoSe 2 .
Assignees
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Classifications
of semiconductor materials · CPC title
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
- C25B11/0421Primary
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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Frequently asked questions
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- What does patent US2020002825A1 cover?
- There is described a silicon photoanode generally having a silicon-based substrate; and a protective layer covering the silicon-base substrate, the protective layer having a transition metal dichalcogenide (TMDC) material, being uniform and having a thickness below about 8 nm.
- Who is the assignee on this patent?
- The Royal Institution For The Advancement Of Learning/Mcgill Univ
- What technology area does this patent fall under?
- Primary CPC classification C25B11/0421. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Jan 02 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).