Precursors and methods for atomic layer deposition of transition metal oxides

Patent metadata

Field	Value
Publication number	US-2019382887-A1
Application number	US-201916460139-A
Country	US
Kind code	A1
Filing date	Jul 2, 2019
Priority date	Feb 25, 2010
Publication date	Dec 19, 2019
Grant date	—

Abstract

Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

First claim

1 . (canceled)

2 . A method for synthesizing a Zr or Hf compound, comprising:
combining a catalyst and cycloheptatriene in a container comprising magnesium to form a reaction mixture; and adding a transition metal precursor comprising Zr or Hf to the reaction mixture, wherein the Zr or Hf compound comprises a first C-7 ring ligand and at least one additional ligand selected from CHT, substituted CHT, substituted cyclopentadienyl (Cp), cycloheptadienyl (CHD), substituted CHD, mono or bidentate alkyl, cycloalkyl, alkoxy, amide, imido, and acyclic or cyclic dienylone.

3 . The method of claim 2 , wherein the transition metal precursor is a transition metal halide.

4 . The method of claim 3 , wherein the transition metal precursor is a transition metal chloride.

5 . The method of claim 2 , wherein the transition metal precursor is a transition metal halide THF adduct.

6 . The method of claim 2 , wherein the transition metal precursor comprises a Group IVB metal.

7 . The method of claim 2 , wherein the transition metal precursor is in solution with THF.

8 . The method of claim 2 , wherein the transition metal precursor is added to the reaction mixture over a one hour period.

9 . The method of claim 2 , wherein tetrahydrofuran (THF) is combined with the catalyst and cycloheptatriene in forming the reaction mixture.

10 . The method of claim 2 , wherein the catalyst is ferric chloride.

11 . The method of claim 2 , wherein the magnesium is in the form of magnesium chips or turnings.

12 . The method of claim 2 , wherein the Zr of Hf compound is a liquid.

13 . The method of claim 2 , wherein the Zr of Hf compound is a solid.

14 . The method of claim 2 , wherein the Zr or Hf compound has the formula R x Cp-M-CHT, where R x Cp represents substituted cyclopentadienyl, CHT is cycloheptatrienyl and M is Zr or Hf.

15 . The method of claim 14 , wherein the Zr or Hf compound is (MeCp)ZrCHT.

16 . The method of claim 2 , wherein the Zr or Hf compound has the formula (R 1 R 2 R 3 R 4 R 5 R 6 R 7 )CHT-M-Cp(R 8 R 9 R 10 R 11 R 12 ), wherein M is Zr or Hf, CHT is cycloheptatrienyl, Cp is cyclopentadienyl and R 1-12 can independently be H or an alkyl group and at least one of R 1-12 is other than hydrogen.

17 . The method of claim 2 , wherein the Zr or Hf compound has the formula (R 1 R 2 R 3 R 4 R 5 R 6 R 7 )CHT-M-CHT(R 8 R 9 R 10 R 11 R 12 R 13 R 14 ), where M is Zr or Hf, CHT is cycloheptatrienyl, and R 1-14 are independently H or an alkyl group.

18 . The method of claim 17 , wherein the Zr or Hf compound has the formula C7H 7 -M-L or ((CH 3 ) 3 C7H 4 )-M-L.

19 . The method of claim 2 , wherein the Zr or Hf compound has the formula (R 1 R 2 R 3 R 4 R 5 R 6 R 7 )CHT-M-L, where M is Zr or Hf, R 1-7 are independently H or an alkyl group and L is a mono or bidentate alkyl, cycloalkyl, alkoxy, amide or imido group, or an acyclic or cyclic dienyl ligand.

20 . The method of claim 2 , wherein the Zr or Hf compound has the formula (R 1 R 2 R 3 R 4 R 5 R 6 R 7 )CHT-M-CHD(R 8 R 9 R 10 R 11 R 12 R 13 R 14 R 15 R 16 ), where M is Zr or Hf, CHD is cycloheptadienyl, and R 1-16 are independently H or an alkyl group.

21 . The method of claim 2 , wherein the Zr or Hf compound has the formula (R 1 R 2 R 3 R 4 R 5 R 6 R 7 R 8 )X-M-X(R 9 R 10 R 11 R 12 R 13 R 14 R 15 R 16 ), where M is Zr or Hf, R 1-16 are independently H or an alkyl group and X is cycloheptatriene.

Assignees

• Asm Int Nv

Inventors

• Hatanpaa Timo
• Niinisto Jaakko
• Ritala Mikko
• Leskela Markku
• Haukka Suvi

Classifications

• C01G27/02

  Oxides · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C01G25/02

  Oxides · CPC title

• C23C16/45527

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title

• C01P2006/40

  Electric properties · CPC title