Ion beam etching chamber

Patent metadata

Field	Value
Publication number	US-2019371574-A1
Application number	US-201815991029-A
Country	US
Kind code	A1
Filing date	May 29, 2018
Priority date	May 29, 2018
Publication date	Dec 5, 2019
Grant date	—

Abstract

In some embodiments, the present disclosure relates to an ion beam etching apparatus. The ion beam etching apparatus includes a substrate holder disposed within a processing chamber and a plasma source in communication with the processing chamber. A vacuum pump is coupled to the processing chamber by way of an inlet. One or more baffles are arranged between the substrate holder and a lower surface of the processing chamber. A byproduct redistributor is configured to move a byproduct from an etching process from outside of the one or more baffles to directly below the one or more baffles.

First claim

What is claimed is:

1 . An ion beam etching apparatus, comprising:
a substrate holder disposed within a processing chamber; a plasma source in communication with the processing chamber; a vacuum pump coupled to the processing chamber by way of an inlet; one or more baffles arranged between the substrate holder and a lower surface of the processing chamber; and a byproduct redistributor configured to move a byproduct from an etching process from outside of the one or more baffles to directly below the one or more baffles.

2 . The etching apparatus of claim 1 , wherein the one or more baffles comprise sidewalls that are separated by a space that is directly below the substrate holder.

3 . The etching apparatus of claim 1 , wherein the one or more baffles are coupled to a sidewall of the processing chamber.

4 . The etching apparatus of claim 1 ,
wherein the one or more baffles comprise a first lower surface and a second lower surface that is between the first lower surface and the lower surface of the processing chamber; and wherein the second lower surface is arranged along an outermost edge of the one or more baffles.

5 . The etching apparatus of claim 1 , wherein the byproduct redistributor comprises:
a heater arranged outside of the one or more baffles; and a cooler arranged directly below the one or more baffles, wherein the heater and the cooler are configured to generate a temperature gradient that decreases from outside of the one or more baffles to directly below the one or more baffles.

6 . The etching apparatus of claim 5 , wherein the temperature gradient is greater than or equal to approximately 10° C.

7 . The etching apparatus of claim 6 , wherein the heater and the cooler are arranged below the lower surface of the processing chamber.

8 . The etching apparatus of claim 1 , wherein the byproduct redistributor comprises:
one or more additional vacuum pumps coupled to the processing chamber by way of one or more additional inlets that are arranged directly below the one or more baffles, wherein the one or more additional vacuum pumps are configured to generate a pressure gradient that decreases from outside of the one or more baffles to directly below the one or more baffles.

9 . The etching apparatus of claim 1 , wherein the one or more baffles comprise a baffle that continuously extends around a perimeter of the processing chamber.

10 . An etching apparatus, comprising:
a substrate holder disposed within a processing chamber and comprising a workpiece reception area configured to hold a workpiece; a vacuum pump coupled to the processing chamber by way of an inlet; one or more baffles extending outward from a sidewall of the processing chamber at vertical positions between the substrate holder and a lower surface of the processing chamber; and a byproduct redistributor configured to move a byproduct from an etching process to directly below the one or more baffles.

11 . The etching apparatus of claim 10 , further comprising:
a plasma source configured to generate a plasma; and a grid system configured to accelerate ions from the plasma towards the substrate holder as an ion beam.

12 . The etching apparatus of claim 10 , wherein the byproduct redistributor comprises:
a cooler arranged directly below the one or more baffles, wherein the cooler is configured to generate a temperature gradient that decreases from outside of the one or more baffles to directly below the one or more baffles.

13 . The etching apparatus of claim 12 , wherein the byproduct redistributor further comprises:
a heater arranged outside of the one or more baffles.

14 . The etching apparatus of claim 10 , wherein the byproduct redistributor comprises:
one or more additional vacuum pumps coupled to the processing chamber by way of one or more additional inlets that are arranged directly below the one or more baffles, wherein the one or more additional vacuum pumps are configured to generate a pressure gradient that decreases from outside of the one or more baffles to directly below the one or more baffles.

15 . The etching apparatus of claim 10 ,
wherein the one or more baffles comprise a first lower surface and a second lower surface that is between the first lower surface and the lower surface of the processing chamber; and wherein the second lower surface is arranged along an outermost edge of the one or more baffles.

16 . The etching apparatus of claim 10 , wherein the one or more baffles comprise a single baffle coupled to the sidewall of the processing chamber and extending continuously around a perimeter of the processing chamber as an unbroken ring.

17 . A method of performing an etching process, comprising:
generating a plasma within a plasma chamber in communication with a processing chamber; accelerating ions from the plasma toward a workpiece within the processing chamber to generate an ion beam, wherein the ion beam performs an etching process that etches a material on the workpiece; and moving a byproduct from the etching process to directly below one or more baffles within the processing chamber.

18 . The method of claim 17 , wherein moving the byproduct from the etching process to below the one or more baffles comprises:
generating a temperature gradient within the processing chamber extending from a first temperature outside of the one or more baffles to lower second temperatures directly below the one or more baffles.

19 . The method of claim 17 , wherein moving the byproduct from the etching process to below the one or more baffles comprises:
generating a pressure gradient within the processing chamber extending from a first pressure outside of the one or more baffles to lower second pressures directly below the one or more baffles.

20 . The method of claim 17 , further comprising:
introducing a gas into the plasma chamber, wherein the plasma is generated from the gas within the plasma chamber; and venting the processing chamber upon completion of the etching process and after moving the byproduct from the etching process to directly below the one or more baffles.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Hsieh Te-Hsien
• Tseng Lee-Chuan

Classifications

• H10P72/7624

  characterised by the mechanical construction of the susceptor, stage or support · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/267

  using plasmas · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H01J2237/334

  Etching · CPC title