Apparatus for manufacturing semiconductor device and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-2019360105-A1
Application number	US-201916406062-A
Country	US
Kind code	A1
Filing date	May 8, 2019
Priority date	May 28, 2018
Publication date	Nov 28, 2019
Grant date	—

Abstract

There is provided a technique capable of forming a plating film excellent in film thickness and quality uniformity on a to-be-plated surface of a semiconductor wafer while suppressing an increase in costs of facilities. An apparatus for manufacturing a semiconductor device includes: a reaction bath; a supply pipe provided inside the reaction bath and including a plurality of ejection holes for ejecting the reaction solution, the ejecting holes being arranged in a longitudinal direction of the supply pipe; and an outer bath serving as a reservoir bath provided adjacent to the reaction bath on a first end side of the supply pipe and storing therein the reaction solution overflowed the reaction bath. The aperture ratio of part of the ejection holes more distant from the outer bath is at least partially higher than that of part of the ejection holes closer to the outer bath.

First claim

What is claimed is:

1 . An apparatus for manufacturing a semiconductor device, comprising:
a reaction bath for immersing a semiconductor wafer in a reaction solution stored therein to form a plating film on the semiconductor wafer; at least one supply pipe provided inside the reaction bath and including a plurality of ejection holes for ejecting the reaction solution, the ejecting holes being arranged in a longitudinal direction of the supply pipe; and a first reservoir bath provided adjacent to the reaction bath and storing therein the reaction solution overflowed the reaction bath, wherein the aperture ratio of part of the ejection holes more distant from the first reservoir bath is at least partially higher than that of part of the ejection holes closer to the first reservoir bath.

2 . The apparatus according to claim 1 , wherein
the supply pipe extends away from the first reservoir bath.

3 . The apparatus according to claim 2 , wherein
the at least one supply pipe includes a plurality of supply pipes, and the supply pipes are arranged in a direction intersecting a longitudinal direction of the supply pipes.

4 . The apparatus according to claim 2 , further comprising
a second reservoir bath different from the first reservoir bath, wherein: the first reservoir bath is provided on a first end side of the supply pipe; the second reservoir bath is provided on a second end side of the supply pipe; and the aperture ratio of part of the ejection holes more distant from the second reservoir bath is at least partially higher than that of part of the ejection holes closer to the second reservoir bath.

5 . The apparatus according to claim 1 , wherein
the at least one supply pipe includes a plurality of supply pipes, and the supply pipes are arranged away from the first reservoir bath and in a direction intersecting a longitudinal direction of the supply pipes.

6 . The apparatus according to claim 1 , wherein
the diameter of part of the ejection holes more distant from the first reservoir bath is at least partially greater than that of part of the ejection holes closer to the first reservoir bath or the density of part of the ejection holes more distant from the first reservoir bath is at least partially higher than that of part of the ejection holes closer to the first reservoir bath.

7 . The apparatus according to claim 2 , wherein:
the reaction bath is rectangular in shape as seen in plan view; the first reservoir bath is provided adjacent to one short edge of the rectangular shape of the reaction bath; and the supply pipe extends parallel to the long edges of the rectangular shape of the reaction bath.

8 . The apparatus according to claim 5 , wherein:
the reaction bath is rectangular in shape as seen in plan view; the first reservoir bath is provided adjacent to one long edge of the rectangular shape of the reaction bath; and the supply pipes extend parallel to the long edges of the rectangular shape of the reaction bath.

9 . A method of manufacturing a semiconductor device, comprising the steps of:
(a) cleaning a to-be-plated surface of a semiconductor wafer; and (b) supplying the reaction solution to the to-be-plated surface of the semiconductor wafer to form the plating film thereon in an apparatus as recited in claim 1 .

10 . The method according to claim 9 , wherein
the step (a) is the step of performing a plasma cleaning process, and plasma used in the plasma cleaning process is oxygen plasma or argon plasma.

11 . The method according to claim 9 , wherein
the step (b) is the step of using an electroless plating process.

Assignees

• Mitsubishi Electric Corp

Inventors

• Nakamura Shotaro

Classifications

• H10P72/04

  Apparatus for manufacture or treatment · CPC title

• H10P70/27 Primary

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P14/46

  using a liquid · CPC title

• C23C18/1664

  with additional means during the plating process · CPC title

• C23C18/34

  using reducing agents · CPC title