Gate Charge Measurements Using Two Source Measure Units

Patent metadata

Field	Value
Publication number	US-2019346501-A1
Application number	US-201916403387-A
Country	US
Kind code	A1
Filing date	May 3, 2019
Priority date	May 9, 2018
Publication date	Nov 14, 2019
Grant date	—

Abstract

A testing environment includes a first measuring unit connected to a gate of a MOSFET device and a second measuring unit connected to a drain of the MOSFET device. The testing environment is particularly useful for testing gate charge for MOSFET devices. In a first phase, the gate of the device is driven with electrical current while the drain is driven with a constant voltage. As the MOSFET device turns on, the second measuring unit switches from providing the constant voltage to providing a constant current to the drain of the MOSFET, while measuring the drain voltage. The switching of modes is automatic and occurs without user intervention. After the MOSFET device has been driven to VgsMax by the gate current, all of the relevant data is stored, which may be analyzed and presented to a user in a User Interface or presented in other manner.

First claim

We claim:

1 . A testing system for testing one or more values of a MOSFET device, the testing system comprising:
a first source measure unit connected to a gate of the MOSFET device and programmed to drive a pre-determined electrical current to the gate of the MOSFET device; and a second source measure unit connected to a drain of the MOSFET device, the second source measure unit configured to:
drive a pre-determined electrical voltage to the drain of the MOSFET device,
measure a current of the drain of the MOSFET device,
detect if the drain current exceeds a compliance current, and
measure drain voltage of the MOSFET device over time.

2 . The testing system according to claim 1 , in which one of the source measure units derives and stores data including MOSFET gate charge over a time period and MOSFET gate voltage over the same time period.

3 . The testing system according to claim 2 , in which one of the source measure units measures and outputs the gate voltage over the time period, and derives a gate charge of the MOSFET over the time period.

4 . The testing system according to claim 2 , in which one of the source measure units outputs the gate charge over the time period and MOSFET gate voltage over the time period to a user.

5 . The testing system according to claim 4 , in which one of the source measure units outputs the gate charge over the time period and MOSFET gate voltage over the time period in a user interface.

6 . The testing system according to claim 4 , in which one of the source measure units outputs the gate charge over the time period and MOSFET gate voltage over the time period in a data file.

7 . The testing system according to claim 4 , in which one of the source measure units is structured to automatically switch modes of operation when the drain current exceeds the compliance current without user intervention.

8 . A method in a testing environment in which a first source/measuring unit is connected to a gate of a MOSFET device and in which a second source/measuring unit is connected to a drain of the MOSFET device, comprising:
driving a pre-determined electrical current to the gate of the MOSFET device; driving a pre-determined electrical voltage to the drain of the MOSFET device, measuring a current of the drain of the MOSFET device, based on the measured drain current, determine whether the measured drain current is at a compliance limit; and measuring a voltage of the drain of the MOSFET device over time.

9 . The method according to claim 8 , further comprising storing data including MOSFET gate charge over a time period and MOSFET gate voltage over the same time period.

10 . The method according to claim 9 , further comprising deriving a gate charge of the MOSFET from the gate charge over the time period and the gate voltage over the time period.

11 . The method according to claim 9 , further comprising outputting the gate charge over the time period and MOSFET gate voltage over the time period to a user.

12 . The method according to claim 11 , in which outputting the gate charge over the time period comprises displaying gate charge data and gate voltage data on a user interface, or providing gate charge data and gate voltage data in a data file.

13 . The method according to claim 8 , further comprising, in response to the current level reaching the compliance limit, automatically switching modes of operation without user intervention.

14 . One or more computer-readable storage media comprising instructions, which, when executed by one or more processors of a testing environment in which a first measuring unit is connected to a gate of a MOSFET device and in which a second measuring unit is connected to a drain of the MOSFET device, cause at least one of the first measuring unit and second measuring unit to:
drive a pre-determined electrical current to the gate of the MOSFET device; drive a pre-determined electrical voltage to the drain of the MOSFET device, measure a current of the drain of the MOSFET device, based on the measured drain current, determine whether the drain current has reached a compliance current; and measure a voltage of the drain of the MOSFET device over time.

15 . The one or more computer-readable storage media according to claim 14 , further comprising instructions configured to cause the at least one of the first measuring unit and second measuring unit to store data including MOSFET gate charge over a time period and MOSFET gate voltage over the same time period.

16 . The one or more computer-readable storage media according to claim 14 , further comprising instructions configured to cause the at least one of the first measuring unit and second measuring unit to derive a gate charge of the MOSFET from the gate charge over the time period and the gate voltage over the time period.

17 . The one or more computer-readable storage media according to claim 14 , further comprising instructions configured to cause the at least one of the first measuring unit and second measuring unit to output the gate charge over the time period and MOSFET gate voltage over the time period to a user.

18 . The one or more computer-readable storage media according to claim 17 , in which outputting the gate charge over the time period comprises displaying gate charge data and gate voltage data on a user interface.

19 . The one or more computer-readable storage media according to claim 14 , further comprising instructions configured to cause the at least one of the first measuring unit and second measuring unit to, in response to the drain current level reaching the compliance limit, automatically switch modes of operation without user intervention.

Assignees

• Keithley Instruments

Inventors

• Pronin Alexander N
• Tupta Mary Anne

Classifications

• G01R31/2621 Primary

  for testing field effect transistors, i.e. FET's · CPC title

• G01R31/2601

  Apparatus or methods therefor (G01R31/2607, G01R31/2642 take precedence) · CPC title

• G01R31/14

  Circuits therefor {, e.g. for generating test voltages, sensing circuits (G01R31/1209 - G01R31/1227 take precedence; for testing switches G01R31/327)} · CPC title

• G01R31/26

  Testing of individual semiconductor devices (testing of photovoltaic devices H02S50/10; testing or measuring during manufacture or treatment {H10P74/00}) · CPC title

• G01R31/2607

  Circuits therefor (G01R31/2642 takes precedence) · CPC title