Method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-2019326418-A1
Application number	US-201916456516-A
Country	US
Kind code	A1
Filing date	Jun 28, 2019
Priority date	May 19, 2017
Publication date	Oct 24, 2019
Grant date	—

Abstract

This disclosure relates to the technical field of semiconductors, and discloses a method for manufacturing semiconductor FinFET devices. The method particularly includes pre-removal of a predetermined thickness of a first region of an isolation region on sides of a fin that is not covered by a pseudo gate such that when a layer of second region of the isolation region covered by the pseudo gate is sacrificially removed during a removal of the pseudo gate, the upper surfaces of the remaining first region and the remaining second region of the isolation region are approximately leveled. By using such a method, DC and AC performances of a resulting FinFET device is improved.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
a substrate; a semiconductor fin on the substrate; an isolation region at sides of the semiconductor fin, wherein an upper surface of the isolation region is lower than an upper surface of the semiconductor fin, wherein the isolation region comprises a first region and a second region; and a gate structure covering a portion of the semiconductor fin and the first region of the isolation region, wherein the second region of the isolation region is located at at least one of two sides of the gate structure, and wherein an upper surface of the first region is approximately leveled with an upper surface of the second region.

2 . The semiconductor device according to claim 1 , further comprising:
a spacer layer located at a side wall of the gate structure and at a side wall of a portion of the first region above the second region.

3 . The semiconductor device according to claim 2 , wherein material for the spacer layer comprises a nitride of silicon.

4 . The semiconductor device according to claim 2 , wherein thickness of the spacer layer is 2-5 nm.

5 . The semiconductor device according to claim 1 , further comprising:
active regions that are at sides of the gate structure and that are at least partially located in the semiconductor fin.

Assignees

• Semiconductor Mfg Int Shanghai Corp
• Semiconductor Mfg Int Beijing Corp

Inventors

• Xie Xinyun

Classifications

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014 Primary

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H01L29/7848

  Electricity · mapped topic

• H01L29/6656

  Electricity · mapped topic

• H01L29/0847

  Electricity · mapped topic