Chemical mechanical polishing method
US-2015375361-A1 · Dec 31, 2015 · US
US2019308294A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2019308294-A1 |
| Application number | US-201916415464-A |
| Country | US |
| Kind code | A1 |
| Filing date | May 17, 2019 |
| Priority date | Apr 25, 2014 |
| Publication date | Oct 10, 2019 |
| Grant date | — |
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A chemical mechanical polishing pad is provided containing a polishing layer having a polishing surface, wherein the polishing layer comprises a reaction product of ingredients, including: an isocyanate terminated urethane prepolymer; and, a curative system, containing a high molecular weight polyol curative; and, a difunctional curative.
Opening claim text (preview).
We claim: 1 . A chemical mechanical polishing pad, comprising: a polishing layer having a polishing surface, wherein the polishing layer comprises a reaction product of ingredients, comprising: an isocyanate terminated urethane prepolymer having 8.75 to 9.25 wt % unreacted NCO groups; and, a curative system consisting essentially of: 10 to 60 wt % of a high molecular weight polyol curative, wherein the high molecular weight polyol curative has a number average molecular weight, M N , of 7,500 to 12,000; and wherein the high molecular weight polyol curative has an average of 5 to 7 hydroxyl groups per molecule; and, 40 to 90 wt % of a difunctional curative wherein the polishing layer exhibits a density of greater than 0.6 g/cm 3 ; a Shore D hardness of 40 to 60; an elongation to break of 125 to 300%; a G 30/90 ratio of 1.5 to 4; a tensile modulus of 100 to 300 (MPa); a wet cut rate of 4 to 10 μm/min; and, a 300 mm TEOS removal rate to Shore D hardness ratio (TEOS 300-RR /Shore D hardness) of ≥28. 2 . The chemical mechanical polishing pad of claim 1 , wherein the polishing surface is adapted for polishing a substrate selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate. 3 . The chemical mechanical polishing pad of claim 1 , wherein the curative system has a plurality of reactive hydrogen groups and the isocyanate terminated urethane prepolymer has a plurality of unreacted NCO groups; and, wherein a stoichiometric ratio of the reactive hydrogen groups to the unreacted NCO groups is 0.85 to 1.15. 4 . The chemical mechanical polishing pad of claim 1 , wherein the isocyanate terminated urethane prepolymer has 8.95 to 9.25 unreacted NCO groups. 5 . The chemical mechanical polishing pad of claim 2 , wherein the polishing surface has a spiral groove pattern formed therein.
involving a dielectric removal step · CPC title
of semiconductor materials · CPC title
characterised by the composition or properties of the pad materials · CPC title
Electricity · mapped topic
Electricity · mapped topic
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