Semiconductor device
US-2017092559-A1 · Mar 30, 2017 · US
Semiconductor device
US2019229103A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2019229103-A1 |
| Application number | US-201916257722-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 25, 2019 |
| Priority date | Oct 12, 2016 |
| Publication date | Jul 25, 2019 |
| Grant date | — |
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Abstract
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A semiconductor device includes: a first switching element that is provided on a high side; a first diode element that is connected in parallel to the first switching element; a second switching element that is provide on a low side and connected in series to the first switching element; and a second diode element that is connected in parallel to the second switching element, wherein the first switching element and one of the first diode element and the second diode element are stacked adjacently to each other in a vertical direction of respective electrode surfaces thereof via a conductive electrode, the second switching element and the other of the first diode element and the second diode element that is different from the diode element adjacent to the first switching element are stacked adjacently to each other in a vertical direction of respective electrode surfaces thereof via a conductive electrode, and the first switching element and the second switching element are not adjacent in a vertical direction of respective electrode surfaces thereof.
First claim
Opening claim text (preview).
1 . A semiconductor device comprising: a first switching element that is provided on a high side; a first diode element that is connected in parallel to the first switching element; a second switching element that is provide on a low side and connected in series to the first switching element; and a second diode element that is connected in parallel to the second switching element, wherein the first switching element and one of the first diode element and the second diode element are stacked adjacently to each other in a vertical direction of respective electrode surfaces thereof via a conductive electrode, the second switching element and the other of the first diode element and the second diode element that is different from the diode element adjacent to the first switching element are stacked adjacently to each other in a vertical direction of respective electrode surfaces thereof via a conductive electrode, and the first switching element and the second switching element are not adjacent in a vertical direction of respective electrode surfaces thereof. 2 . The semiconductor device according to claim 1 , further comprising: a heat radiation plate that radiates heat generated in the first switching element and the second switching element, wherein either one of electrode surfaces of the first switching element and/or either one of electrode surfaces of the second switching element is adjacent to the heat radiation plate. 3 . The semiconductor device according to claim 1 , wherein the first diode element and the second diode element are formed of a silicon carbide (SiC) or gallium nitride (GaN) substrate. 4 . The semiconductor device according to claim 1 , wherein the first switching element, the first diode element, the second switching element, and the second diode element are electrically connected to the conductive electrode by a conductive paste or plating. 5 . The semiconductor device according to claim 4 , wherein a melting point T of the conductive paste, a material of the plating, and a metal of the electrode surface satisfies T/2>500 (K).
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between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title
between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title
changes in dispositions · CPC title
changes in dispositions · CPC title
changes in structures or sizes · CPC title
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Frequently asked questions
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- What does patent US2019229103A1 cover?
- A semiconductor device includes: a first switching element that is provided on a high side; a first diode element that is connected in parallel to the first switching element; a second switching element that is provide on a low side and connected in series to the first switching element; and a second diode element that is connected in parallel to the second switching element, wherein the first …
- Who is the assignee on this patent?
- Univ Waseda, Mitsui High Tec, Toyota Motor Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10W90/00. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Jul 25 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).