Formation of encapsulated nanoribbons in dielectric nanotubes
US-12435221-B2 · Oct 7, 2025 · US
US2019177550A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2019177550-A1 |
| Application number | US-201816211622-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 6, 2018 |
| Priority date | Dec 7, 2017 |
| Publication date | Jun 13, 2019 |
| Grant date | — |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
The present disclosure relates to a composition that includes a metal chalcogenide having a surface and a ligand, where the ligand is covalently bound to the surface. In some embodiments of the present disclosure, the metal chalcogenide may be defined by MXz, where Z is between 1 and 3, inclusively, M (a metal) includes at least one of Sc, Zr, Hf, Zr, Ti, Nb, Ta, V, Mo, Cr, Re, W, S, Pt, Fe, Cu, Sb, In, Zn, Cd, P, and/or Mn, and X (a chalcogenide) includes at least one of S, Se, and/or Te.
Opening claim text (preview).
What is claimed is: 1 . A composition comprising: a metal chalcogenide having a surface; and a ligand, wherein: the ligand is covalently bound to the surface. 2 . The composition of claim 1 , wherein: the metal chalcogenide is defined by MXz, Z is between 1 and 3, inclusively, M comprises at least one of Sc, Zr, Hf, Zr, Ti, Nb, Ta, V, Mo, Cr, Re, W, S, Pt, Fe, Cu, Sb, In, Zn, Cd, P, or Mn, and X comprises at least one of S, Se, or Te. 3 . The composition of claim 2 , wherein the metal chalcogenide comprises at least one of WTe 2 , WSe 2 , WS 2 , MoS 2 , MoSe 2 , or MoTe 2 . 4 . The composition of claim 3 , wherein the metal chalcogenide comprises at least one of ScS 2 , ScSe 2 , SeTe 2 , ZrS 2 , ZrSe 2 , HfS 2 , HFSe 2 , HfS 3 , HfSe 3 , ZrS 3 , ZrSe 3 , ZrTe 3 , TiS 2 , TiS 3 , TiSe 3 , NbS 2 , NbSe 2 , NbS 3 , TaS 2 , TaSe 2 , TaS 3 , TaSe 3 , VS 2 , VSe 2 , MoReS 2 , CrS 2 , WSSe 2 , MoSSe, MoWSe 2 , MoTe 2 , WTe 2 , WS 2 , MoS 2 , MoSe 2 , MoTe 2 , ReS 2 , ReSe 2 , ReNbS 2 , ReNbSe 2 , PtS 2 , PtSe 2 , PtTe 2 , FeSe, CuS, CuSbS 2 , CuInS 2 , CuInSe 2 , ZnS, ZnSe, CdS, CdSe, FePS 3 , FePSe 3 , MnPS 3 , MnPSe 3 , CdPS 3 , or CdPSe 3 . 5 . The composition of claim 1 , wherein the metal chalcogenide is in a form comprising at least one of a sheet or a particle. 6 . The composition of claim 5 , wherein the sheet comprises at least one monolayer of the metal chalcogenide. 7 . The composition of claim 5 , wherein the sheet has a thickness between 5.0 nm and 30 nm. 8 . The composition of claim 5 , wherein the particle has a characteristic length between 5.0 nm and 50,000 nm. 9 . The composition of claim 1 , wherein the ligand comprises at least one of an electron donating functional group or an electron withdrawing functional group, as measured by at least one of a Hammett parameter or a workfunction. 10 . The composition of claim 1 , wherein the ligand comprises a moiety comprising at least one of a halogen, an amine, an amide, a ketone, thiol, or a nitro group. 11 . The composition of claim 10 , wherein the ligand further comprises an intermediate group comprising at least one of an aromatic group, a saturated hydrocarbon chain, or an unsaturated hydrocarbon chain. 12 . The composition of claim 11 , wherein the aromatic group is a phenyl ring (Ph). 13 . The composition of claim 12 , wherein: the ligand comprises at least one of NO 2 Ph, ClPh, BrPh, OCH 3 Ph, or (CH 3 CH 2 ) 2 NPh, and the moiety is in at least one of the ortho position, the meta position, or the para position of the phenyl ring. 14 . The composition of claim 13 , wherein the ligand comprises at least one of p-NO 2 Ph, 3,5-Cl 2 Ph, p-BrPh, p-OCH 3 Ph, or p-(CH 3 CH 2 ) 2 NPh 15 . The composition of claim 1 , wherein the metal chalcogenide is in a substantially crystalline phase. 16 . The composition of claim 15 , wherein at least a portion of the crystalline phase comprises a 1 T metallic phase. 17 . The composition of claim 9 , wherein the Hammett parameter is between −0.5 and 1.0. 18 . The composition of claim 9 , wherein the workfunction is between 3.0 eV and 6.0 eV. 19 . The composition of claim 1 , wherein: the composition catalyzes the hydrogen evolution reaction (HER), and the composition generates a HER catalytic current density of at least 10 mA/cm 2 when provided with an overpotential of less than 1000 mV. 20 . A composition comprising: MoS 2 in a form of at least one of a particle or a sheet; and a ligand covalently bound to the MoS 2 , wherein: the ligand comprises at least one of p-NO 2 Ph-, 3,5-Cl 2 Ph-, p-BrPh-, p-OCH 3 Ph-, and p-(CH 3 CH 2 ) 2 NPh-, the MoS 2 is it least partially in a 1 T crystalline phase and maintains the 1 T crystalline phase for at least two hours, the form has a characteristic length between 5.0 nm and 50,000 nm, the composition is characterized by a Hammett parameter between −0.5 and 1.0, the composition catalyzes the hydrogen evolution reaction (HER), and the composition generates a HER catalytic current density of about 10 mA/cm 2 when provided with an overpotential of less than 1000 mV.
obtained by optical microscopy · CPC title
obtained by SEM · CPC title
by XPS, EDX or EDAX data · CPC title
by IR- or Raman-data · CPC title
Electric properties · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.