Device layer thin-film transfer to thermally conductive substrate

Patent metadata

Field	Value
Publication number	US-2019148564-A1
Application number	US-201916246637-A
Country	US
Kind code	A1
Filing date	Jan 14, 2019
Priority date	Dec 18, 2015
Publication date	May 16, 2019
Grant date	—

Abstract

A semiconductor structure includes a thin-film device layer, an optoelectronic device disposed in the thin-film device layer, and a surrogate substrate permanently attached to the thin film device layer. The optoelectronic device is excitable by light at an application wavelength. The surrogate substrate is optically transparent and has a thermal conductivity of at least 300 W/m-K. The surrogate substrate has a volume of substrate removed therefrom to form a via. Light passes through the via and at least some of the surrogate substrate prior to reaching the optoelectronic device.

First claim

What is claimed is:

1 . A semiconductor structure, comprising:
a thin-film device layer; an optoelectronic device disposed in the thin-film device layer, the optoelectronic device excitable by light at an application wavelength; and a surrogate substrate permanently attached to the thin film device layer, wherein the surrogate substrate has a volume of substrate removed therefrom to form a via, the via aligned with a location of the optoelectronic device, a cross-sectional area of the via being about equal to an active area of the optoelectronic device, and a depth of the via being substantially less than a thickness of the surrogate substrate, wherein the light passes through the via and at least some of the surrogate substrate prior to reaching the optoelectronic device.

2 . The semiconductor structure of claim 1 , wherein:
the surrogate substrate includes a plurality of small vias aligned with the via, wherein a combined depth of the via and the small vias is equal to, or virtually equal to, the thickness of the surrogate substrate such that the light passes through none or virtually none of the surrogate substrate prior to reaching the optoelectronic device.

3 . The semiconductor structure of claim 1 , wherein the thin-film device layer is silicon carbide.

4 . The semiconductor structure of claim 3 , wherein the surrogate substrate is permanently attached to the thin film device layer by a polymeric thermal interface material that is optically transparent at the application wavelength and has a thermal conductivity of at least 300 W/m-K.

5 . The semiconductor structure of claim 4 , wherein the surrogate substrate is permanently attached to the thin film device layer by polyimide with aluminum nitride nanoparticles.

6 . The semiconductor structure of claim 4 , wherein the surrogate substrate is permanently attached to the thin film device layer by a layer of a metal, wherein the layer has a thickness such that the layer is effectively transparent at the application wavelength.

7 . The semiconductor structure of claim 3 , wherein the surrogate substrate is silicon carbide.

8 . The semiconductor structure of claim 3 , wherein the surrogate substrate is one of diamond, sapphire, zinc oxide, magnesium oxide and polycrystalline silicon carbide.

9 . The semiconductor structure of claim 3 , wherein surrogate substrate is one of diamond, sapphire, zinc oxide, magnesium oxide and polycrystalline silicon carbide with an epitaxial layer of silicon carbide on a surface of the surrogate substrate that bonds with the thin-film device layer.

10 . The semiconductor structure of claim 3 , wherein the surrogate substrate includes a via that extends at least partly through the surrogate substrate, wherein a location of the via in the surrogate substrate is selected to coincide with a location of the optoelectronic device in the thin-film device layer to facilitate light reaching the optoelectronic device.

11 . The semiconductor structure of claim 1 , wherein the application wavelength is between 500 nm and 800 nm.

12 . The semiconductor structure of claim 1 , wherein an area of the optical via is about equal to an active area of the optoelectronic device.

13 . The semiconductor structure of claim 1 , wherein a diameter of the optical via is at least 1 μm.

14 . The semiconductor structure of claim 1 , wherein a diameter of the optical via is not more than 35 μm.

Assignees

• IBM

Inventors

• Dang Bing
• Knickerbocker John U
• Wright Steven Lorenz
• Tsang Yang Cornelia

Classifications

• H01J1/30

  Cold cathodes, e.g. field-emissive cathode · CPC title

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H01L31/1892

  Electricity · mapped topic

• H01L31/024 Primary

  Electricity · mapped topic

• H01L31/1896

  Electricity · mapped topic