Method of forming semiconductor device using titanium-containing layer and device formed

Patent metadata

Field	Value
Publication number	US-2019148152-A1
Application number	US-201816231836-A
Country	US
Kind code	A1
Filing date	Dec 24, 2018
Priority date	Dec 14, 2016
Publication date	May 16, 2019
Grant date	—

Abstract

A method of forming a semiconductor device includes depositing a titanium-containing material over a source/drain (S/D), wherein an energy of depositing the titanium-containing material is sufficient to cause re-deposition of a material of the S/D along sidewalls of a dielectric layer adjacent the S/D to form protrusions extending from a top surface of the S/D. The method further includes annealing the semiconductor device to form a silicide layer in the S/D and in the protrusions.

First claim

What is claimed is:

1 . A method of forming a semiconductor device, the method comprising:
depositing a titanium-containing material over a source/drain (S/D), wherein an energy of depositing the titanium-containing material is sufficient to cause re-deposition of a material of the S/D along sidewalls of a dielectric layer adjacent the S/D to form protrusions extending from a top surface of the S/D; and annealing the semiconductor device to form a silicide layer in the S/D and in the protrusions.

2 . The method of claim 1 , wherein the depositing comprises performing a sputtering process using a bias power ranging from about 50 Watts (W) to 1000 W.

3 . The method of claim 1 , wherein the depositing comprises using a plasma power ranging from about 50 W to about 10,000 W.

4 . The method of claim 1 , wherein the annealing is performed at a temperature ranging from about 500° C. to about 600° C.

5 . The method of claim 1 , wherein the annealing is performed for a duration ranging from about 20 seconds to about 60 seconds.

6 . A device comprising:
a source/drain (S/D) in a substrate and adjacent to a gate structure, wherein the S/D comprises a protrusion extending from a top surface of the S/D, and the protrusion has a tapered profile; a silicide layer in the protrusion, wherein the silicide layer comprises titanium; and a contact plug electrically connected to the protrusion through the silicide layer.

7 . The device of claim 6 , wherein a height of the protrusion above the top surface of the S/D ranges from about 3 nanometers (nm) to about 7 nm.

8 . The device of claim 6 , wherein a width of the protrusion closest to the top surface of the S/D ranges from about 4 nm to about 6 nm.

9 . The device of claim 6 , wherein a width of the protrusion farthest to the top surface of the S/D ranges from about 0.5 nm to about 1.5 nm.

10 . The device of claim 6 , wherein the silicide layer extends along the top surface of the S/D.

11 . A device comprising:
a gate structure over a substrate; a source/drain (S/D) in the substrate adjacent to the gate structure, wherein the S/D comprises at least one protrusion extending from a top surface of the S/D; a silicide layer extending along the at least one protrusion and along the top surface of the S/D; and a contact plug electrically connected to the at least one protrusion and the S/D through the silicide layer.

12 . The device of claim 11 , wherein a width of the at least one protrusion is constant as a distance from the S/D increases.

13 . The device of claim 11 , wherein the at least one protrusion comprises a plurality of protrusions, and the silicide layer extends along each protrusion of the plurality of protrusions.

14 . The device of claim 11 , further comprising an inter-layer dielectric (ILD) over the S/D.

15 . The device of claim 14 , wherein the top surface of the S/D contacting the silicide layer is recessed with respect to a top surface of the S/D under the ILD.

16 . The device of claim 14 , wherein the at least one protrusion extends along the ILD.

17 . The device of claim 11 , wherein a height of the protrusion above the top surface of the S/D ranges from about 3 nanometers (nm) to about 7 nm.

18 . The device of claim 11 , wherein the S/D comprises germanium.

19 . The device of claim 11 , wherein the at least one protrusion has a tapered profile.

20 . The device of claim 11 , wherein a concentration of germanium in the S/D varies along a direction parallel to a top surface of the substrate.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Wu Chia-Yang
• Jangjian Shiu-Ko
• Chang Keng-Chuan
• Su Ting-Siang

Classifications

• H10P14/44

  Physical vapour deposition [PVD] · CPC title

• H10P14/42

  using a gas or vapour · CPC title

• H10W20/083

  the openings being via holes penetrating underlying conductors · CPC title

• H10W20/069

  by forming self-aligned vias or self-aligned contact plugs · CPC title

• H10W20/047

  by introducing additional elements therein · CPC title