Etching method and etching apparatus

Patent metadata

Field	Value
Publication number	US-2018076051-A1
Application number	US-201715698823-A
Country	US
Kind code	A1
Filing date	Sep 8, 2017
Priority date	Sep 9, 2016
Publication date	Mar 15, 2018
Grant date	—

Abstract

A method for etching a titanium nitride film includes a first process of supplying reactive species, which include hydrogen and fluorine, to a base material including a titanium nitride film on at least a part of a surface, and a second process of vacuum-heating the base material to remove the surface reaction layer that is generated on the surface of the titanium nitride film in the first process.

First claim

What is claimed is:

1 . An etching method for etching a titanium nitride film, comprising:
a first process of supplying reactive species, which include hydrogen and fluorine, to a base material that includes a titanium nitride film on at least a part of a surface; and a second process of vacuum-heating the base material to remove a surface reaction layer that is formed on a surface of the titanium nitride film in the first process.

2 . The etching method according to claim 1 ,
wherein a combination of the first process and the second process is set as one cycle, and a plurality of the cycles are repeated.

3 . The etching method according to claim 1 ,
wherein the reactive species are generated by plasma of a processing gas that includes a material including hydrogen as a constituent element, and a material including fluorine as a constituent element.

4 . An etching method, comprising:
repeating a cycle of a combination of a first process and a second process a plurality of times, the first process being configured to supply reactive species, which include hydrogen, oxygen, and fluorine, to a base material that includes a titanium nitride film on at least a part of a surface, and the second process being configured to vacuum-heat the base material to remove a surface reaction layer that is formed on a surface of the titanium nitride film in the first process.

5 . The etching method according to claim 4 ,
wherein the reactive species are generated by plasma of a processing gas that includes a material including hydrogen as a constituent element, a material including oxygen as a constituent element, and a material including fluorine as a constituent element.

6 . The etching method according to claim 1 ,
wherein the reactive species are generated by plasma of a processing gas that does not include a material including chlorine as a constituent element.

7 . The etching method according to claim 1 ,
wherein the reactive species are generated by plasma of processing gas that does not include a material including nitrogen as a constituent element.

8 . The etching method according to claim 1 ,
wherein the surface reaction layer mainly contains nitrogen that is bonded to hydrogen, and titanium that is bonded to fluorine.

9 . The etching method according to claim 1 ,
wherein the surface reaction layer contains ammonium fluorotitanate as a main component.

10 . The etching method according to claim 1 ,
wherein a temperature of the base material in vacuum heating is 100° C. or higher.

11 . The etching method according to claim 1 ,
wherein a degree of vacuum of the base material in vacuum heating is 100 Pa or lower.

12 . The etching method according to claim 1 ,
wherein a generation amount of the surface reaction layer has a saturation property with respect to processing time of the first process.

13 . An etching apparatus that etches a titanium nitride film, comprising:
a processing chamber; a workpiece that is provided in the processing chamber, and includes the titanium nitride film on at least a part of a surface; a stage on which the workpiece is loaded; a plasma source that supplies radicals, which include hydrogen and fluorine, into the processing chamber; a vacuum pump that reduces a pressure of the processing chamber; and a heating unit that heats the workpiece so as to remove a surface reaction layer that is formed on a surface of the titanium nitride film with the radicals including hydrogen and fluorine.

14 . The etching apparatus according to claim 13 ,
wherein the heating unit that heats the workpiece is an infrared lamp.

15 . The etching apparatus according to claim 13 ,
wherein the radicals include an oxygen radical, and do not include a chlorine radical and a nitrogen radical.

Assignees

• Hitachi High Tech Corp

Inventors

• Shinoda Kazunori
• Sakai Satoshi
• Izawa Masaru
• MIYOSHI Nobuya
• Kobayashi Hiroyuki
• Kouzuma Yutaka
• Ishikawa Kenji
• Hori Masaru

Classifications

• H10P72/0436

  mainly by radiation · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/267 Primary

  using plasmas · CPC title

• H01L21/67069

  Electricity · mapped topic