Transparent Conductive Film and Fabrication Method Thereof, Display Substrate and Display Device

Patent metadata

Field	Value
Publication number	US-2016042829-A1
Application number	US-201414421643-A
Country	US
Kind code	A1
Filing date	Jun 30, 2014
Priority date	Oct 21, 2013
Publication date	Feb 11, 2016
Grant date	—

Abstract

The present invention provides a transparent conductive film, a fabrication method thereof, a display substrate and a display device. The transparent conductive film includes a seed film layer and a nano-wire film layer, and the fabrication method includes: forming the seed film layer on the substrate by adopting a pulsed laser deposition method, and forming the nano-wire film layer on the seed film layer by adopting the pulsed laser deposition method. The nano-wire film layer has a particular one-dimensional nano-wire structure, thereby increasing the light transmittance of the transparent conductive film to improve the utilization rate of light energy, and quickly collecting charges and directly transmitting the same along one-dimensional channels formed by the one-dimensional nano-wires to improve the collection efficiency of the charges.

First claim

1 - 20 . (canceled)

21 . A fabrication method of a transparent conductive film fabricated on a substrate, wherein the fabrication method comprises:
step S 1 : forming a seed film layer on the substrate by adopting a pulsed laser deposition method, wherein the seed film layer comprises uniformly distributed nano-crystalline grains; and step S 2 : forming a nano-wire film layer on the seed film layer by adopting the pulsed laser deposition method, wherein the nano-wire film layer comprises a plurality of one-dimensional nano-wires arranged in parallel.

22 . The fabrication method of claim 21 , wherein the step S 1 comprises:
step S 11 : performing ultrasonic cleaning for the substrate by using an organic solution;
step S 12 : drying the substrate; and
step S 13 : depositing and forming the seed film layer on the substrate in an oxygen atmosphere and a room temperature environment of a deposition chamber by using the pulsed laser deposition method.

23 . The fabrication method of claim 22 , wherein the step S 2 comprises:
step S 21 : depositing and forming the nano-wire film layer on the seed film layer in an oxygen atmosphere of the deposition chamber by using the pulsed laser deposition method.

24 . The fabrication method of claim 22 , wherein
the step S 11 comprises: cleaning the substrate ultrasonically in an acetone solution and an ethanol solution, each for 30-60 minutes.

25 . The fabrication method of claim 22 , wherein the step S 13 comprises: filling oxygen in the vacuum deposition chamber so that the pressure in the deposition chamber would be within a range of 6-10 Pa.

26 . The fabrication method of claim 23 , wherein the step S 21 comprises: filling oxygen in the deposition chamber so that the pressure in the deposition chamber would be within a range of 25-35 Pa.

27 . The fabrication method of claim 25 , wherein the purity of the filled oxygen is 99.9% to 99.9999%.

28 . The fabrication method of claim 26 , wherein the purity of the filled oxygen is 99.9% to 99.9999%.

29 . The fabrication method of claim 22 , wherein in the pulsed laser deposition method, a pulsed laser transmitter is arranged outside the deposition chamber; a focusing lens is arranged between the pulsed laser transmitter and the deposition chamber; the deposition chamber is provided with a transparent quartz window; a target platform and a base platform are arranged oppositely in the deposition chamber; a target material is arranged on the target platform; the focus of the focusing lens, the center of the quartz window and the center of the target material are located in the same straight line; and the substrate is arranged on the base platform and is parallel to the target material,
wherein, the step S 13 further comprises: adjusting the distance between the focusing lens and the quartz window to focus the focusing lens on the target material; adjusting the distance between the target material and the substrate to be 4.5-5.5 cm; and setting the target platform and the base platform to rotate at the same rotating speed of 5 r/min.

30 . The fabrication method of claim 23 , wherein in the pulsed laser deposition method, a pulsed laser transmitter is arranged outside the deposition chamber; a focusing lens is arranged between the pulsed laser transmitter and the deposition chamber; the deposition chamber is provided with a transparent quartz window; a target platform and a base platform are arranged oppositely in the deposition chamber; a target material is arranged on the target platform; the focus of the focusing lens, the center of the quartz window and the center of the target material are located in the same straight line; and the substrate is arranged on the base platform and is parallel to the target material,
wherein, the step S 21 further comprises: adjusting the distance between the focusing lens and the quartz window to focus the focusing lens on the target material; adjusting the distance between the target material and the substrate to be 4.5-5.5 cm; and setting the target platform and the base platform to rotate at the same rotating speed of 5 r/min.

31 . The fabrication method of claim 29 , wherein in the pulsed laser deposition method, the frequency of laser pulses is 9-11 Hz, the number of the laser pulses is 5000-7000, and the energy of a single laser pulses is 248-252 mJ.

32 . The fabrication method of claim 29 , wherein the target material adopts a transition metal oxide with a purity of 99.99%-99.9999%, and the transition metal oxide comprises zinc oxide, tin oxide or titanium oxide.

33 . The fabrication method of claim 30 , wherein the target material adopts a transition metal oxide with a purity of 99.99%-99.9999%, and the transition metal oxide comprises zinc oxide, tin oxide or titanium oxide.

34 . A transparent conductive film, comprising a seed film layer and a nano-wire film layer, wherein the seed film layer comprises uniformly distributed nano-crystalline grains, the nano-wire film layer comprises a plurality of one-dimensional nano-wires, and the nano-wire film layer is arranged on the seed film layer.

35 . The transparent conductive film of claim 44 , wherein each one of the plurality of one-dimensional nano-wires extends on the seed film layer in a one-dimensional manner and is arranged in parallel to each other to form the nano-wire film layer, and the diameter of each one of the plurality of one-dimensional nano-wires is 60-80 nm.

36 . The transparent conductive film of claim 35 , wherein an included angle between each one of the plurality of one-dimensional nano-wires and the seed film layer is 80-90 degrees.

37 . The transparent conductive film of claim 34 , wherein the seed film layer and the nano-wire film layer are made of a transition metal oxide, and the transition metal oxide comprises zinc oxide, tin oxide or titanium oxide.

38 . The transparent conductive film of claim 34 , wherein the thickness of the seed film layer is 20-50 nm, and the thickness of the nano-wire film layer is 2-3 μm.

39 . A display substrate, comprising the transparent conductive film of claim 34 .

40 . The display substrate of claim 39 , wherein the transparent conductive film is used as a common electrode and/or a pixel electrode of the display substrate.

Assignees

• Boe Technology Group Co Ltd
• Beijing Boe Display Tech Co

Inventors

• Hu Tengteng
• Ren Jinyu
• Song Yongzhi

Classifications

• C23C14/086

  of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title

• C23C14/021

  Cleaning or etching treatments · CPC title

• H01B1/08 Primary

  oxides · CPC title

• C23C14/28

  by wave energy or particle radiation (C23C14/32 - C23C14/48 take precedence) · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title