Semiconductor device, method of manufacturing a semiconductor device, solid-state imaging device, and electronic apparatus

Patent metadata

Field	Value
Publication number	US-2019057997-A1
Application number	US-201616074669-A
Country	US
Kind code	A1
Filing date	Nov 2, 2016
Priority date	Feb 9, 2016
Publication date	Feb 21, 2019
Grant date	—

Abstract

A semiconductor device of the present disclosure includes: a semiconductor element disposed on a first surface side of a semiconductor substrate; a through-electrode that is provided through the semiconductor substrate in a thickness direction of the semiconductor substrate and introduces charge obtained in the semiconductor element to a second surface side of the semiconductor substrate; and an amplifier transistor that outputs an electrical signal based on the charge introduced by the through-electrode, the amplifier transistor using the through-electrode as a gate electrode and including a source region and a drain region around the through-electrode.

First claim

1 . A semiconductor device, comprising:
a semiconductor element disposed on a first surface side of a semiconductor substrate; a through-electrode that is provided through the semiconductor substrate in a thickness direction of the semiconductor substrate and introduces charge obtained in the semiconductor element to a second surface side of the semiconductor substrate; and an amplifier transistor that outputs an electrical signal based on the charge introduced by the through-electrode, the amplifier transistor using the through-electrode as a gate electrode and including a source region and a drain region around the through-electrode.

2 . The semiconductor device according to claim 1 , wherein
the through-electrode includes an electric conductor that is provided through the semiconductor substrate, and a separation layer that electrically separates the electric conductor and the semiconductor substrate from each other.

3 . The semiconductor device according to claim 2 , wherein
the separation layer is formed of an insulating film that covers a side wall of the electric conductor.

4 . The semiconductor device according to claim 2 , wherein
a film thickness of the insulating film differs depending on a position of the semiconductor substrate in a depth direction.

5 . The semiconductor device according to claim 1 , wherein
the source region and the drain region of the amplifier transistor are each formed of a diffusion layer, the diffusion layer being present in the vicinity of an insulating film and formed at a part of or over the entire region of the semiconductor substrate in a depth direction.

6 . The semiconductor device according to claim 1 , further comprising
a planar transistor that is formed on a flat surface of the semiconductor substrate, wherein a gate oxide film of the planar transistor and a gate oxide film of the amplifier transistor are different from each other in a film thickness.

7 . The semiconductor device according to claim 1 , further comprising
a planar transistor that is formed on a flat surface of the semiconductor substrate, wherein a gate oxide film of the planar transistor and a gate oxide film of the amplifier transistor are different from each other in a constituent material.

8 . The semiconductor device according to claim 1 , further comprising
a cap electrode that is formed of an electric conductor and provided at a top of the through-electrode, the cap electrode being provided to be extended to the vicinity of the source region, the drain region, or a channel region of the amplifier transistor.

9 . The semiconductor device according to claim 1 , wherein
the electric conductor includes at least one layer in a length direction and is formed of at least one type of electric conductor material.

10 . The semiconductor device according to claim 9 , wherein
the electric conductor includes a first electric conductor and a second electric conductor, the first electric conductor functioning as the gate electrode of the amplifier transistor, the second electric conductor being continuous with the first electric conductor.

11 . The semiconductor device according to claim 10 , wherein
the first electric conductor has a work function that desirably sets an operation range of the amplifier transistor.

12 . The semiconductor device according to claim 11 , wherein
an insulating film that separates the first electric conductor and the semiconductor substrate from each other is thinner than an insulating film that separates the second electric conductor and the semiconductor substrate from each other, and is formed of a material having a higher dielectric constant than a material of the insulating film that separates the second electric conductor and the semiconductor substrate from each other.

13 . The semiconductor device according to claim 10 , wherein
the second electric conductor has a smaller diameter than a diameter of the first electric conductor and is formed of an electrically conductive material.

14 . The solid-state imaging device according to claim 10 , wherein
an insulating film around the first electric conductor and an insulating film around the second electric conductor are different from each other in a film thickness.

15 . The semiconductor device according to claim 14 , wherein
the insulating film around the second electric conductor is formed of a low dielectric constant insulating film.

16 . The semiconductor device according to claim 15 , wherein
the insulating film around the second electric conductor forms a separation structure together with a vacancy that intervenes between the second electric conductor and the insulating film, the separation structure electrically separating the second electric conductor and the semiconductor substrate from each other.

17 . The semiconductor device according to claim 16 , wherein
a fixed charge amount that is applied to the insulating film around the first electric conductor and a fixed charge amount that is applied to the insulating film around the second electric conductor are different from each other.

18 . A method of manufacturing a semiconductor device, the semiconductor device including
a semiconductor element disposed on a first surface side of a semiconductor substrate, a through-electrode that is provided through the semiconductor substrate in a thickness direction of the semiconductor substrate and introduces charge obtained in the semiconductor element to a second surface side of the semiconductor substrate, and an amplifier transistor that outputs an electrical signal based on the charge introduced by the through-electrode, the method comprising: using the through-electrode as a gate electrode of the amplifying transistor; and forming a source region and a drain region of the amplifier transistor around the through-electrode.

19 . A solid-state imaging device, comprising:
a photoelectric converter element disposed on a first surface side of a semiconductor substrate; a through-electrode that is provided through the semiconductor substrate in a thickness direction of the semiconductor substrate and introduces charge obtained by photoelectric conversion of the photoelectric converter element to a second surface side of the semiconductor substrate; and an amplifier transistor that outputs an electrical signal based on the charge introduced by the through-electrode, the amplifier transistor using the through-electrode as a gate electrode and including a source region and a drain region around the through-electrode.

20 . An electronic apparatus, comprising
a solid-state imaging device including
a photoelectric converter element disposed on a first surface side of a semiconductor substrate,
a through-electrode that is provided through the semiconductor substrate in a thickness direction of the semiconductor substrate and introduces charge obtained by photoelectric conversion of the photoelectric converter element to a second surface side of the semiconductor substrate, and
an amplifier transistor that outputs an electrical signal based on the charge introduced by the through-electrode, the amplifier transistor using the through-electrode as a gate electrode and including a source region and a drain region around the through-electrode.

Assignees

• Sony Corp

Inventors

• Togashi Hideaki
• Nakanishi Kosuke

Classifications

• H10W20/20

  Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] · CPC title

• H10W20/481

  on the rear surfaces of the wafers or substrates · CPC title

• H10W20/2128

  Coaxial through-semiconductor vias · CPC title

• H01L27/14636 Primary

  Electricity · mapped topic

• H01L29/4236

  Electricity · mapped topic