High electron mobility transistors and methods for fabricating the same

Patent metadata

Field	Value
Publication number	US-2018374944-A1
Application number	US-201816017833-A
Country	US
Kind code	A1
Filing date	Jun 25, 2018
Priority date	Jun 23, 2017
Publication date	Dec 27, 2018
Grant date	—

Abstract

A high electron mobility transistor (HEMT) and method of producing the same are provided. The HEMT includes a barrier layer formed on a GaN layer. The HEMT also includes a ZrO2 gate dielectric layer formed by either a ZTB precursor, a TDMA-Zr precursor, or both. The HEMT may also include a recess in the barrier layer in the gate region of the HEMT. The HEMTs may operate in an enhancement mode.

First claim

What is claimed is:

1 . A high electron mobility transistor, comprising:
a source; a drain; a GaN layer; a barrier layer disposed on the GaN layer; a gate metal; and a zirconium oxide dielectric layer at least partially surrounding the gate metal, wherein the zirconium oxide dielectric layer is formed from a zirconium (IV) tert-butoxide precursor.

2 . The transistor according to claim 1 , further comprising:
a recess in the barrier layer in the a region of the gate metal, wherein the zirconium oxide dielectric layer is disposed in the recess in the barrier layer.

3 . The transistor according to claim 2 , wherein the recess in the barrier layer extends to the GaN layer.

4 . The transistor according to claim 2 , wherein a current conducting channel is formed in the GaN layer when a threshold voltage is applied to the gate metal.

5 . The transistor according to claim 4 , wherein the current conducting channel is a two-dimensional electron gas.

6 . A method forming a high electron mobility transistor, comprising:
forming a barrier layer on a GaN substrate; forming a source and a drain; removing a portion of the barrier layer; forming a zirconium oxide dielectric in a region corresponding to the removed portion of the barrier layer, wherein the zirconium oxide dielectric is formed from a zirconium (IV) tert-butoxide precursor; and forming a gate metal, wherein the gate metal is at least partially surrounded by the zirconium oxide dielectric.

Assignees

• Us Gov Sec Navy

Inventors

• Anderson Travis J
• Wheeler Virginia D
• Hobart Karl D
• Kub Francis J

Classifications

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/668

  the materials being characterised by the deposition precursor materials · CPC title