Glass substrate for chemical strengthening and method for chemically strengthening with controlled curvature

Patent metadata

Field	Value
Publication number	US-2018370852-A1
Application number	US-201616061677-A
Country	US
Kind code	A1
Filing date	Dec 1, 2016
Priority date	Dec 18, 2015
Publication date	Dec 27, 2018
Grant date	—

Abstract

The invention relates to a glass substrate for chemical strengthening where a side is treated by ion implantation so as to reduce the extent of ion exchange upon chemical strengthening. Other embodiments relate to a method for making a chemically strengthened glass substrate with controlled curvature comprising: providing a substrate having first and second opposing sides, wherein the substrate presents in the surface layer of at least part of the first side a first ion implantation profile that reduces the extent of ion exchange upon chemical strengthening and chemically strengthening the ion implantation treated glass substrate. The parameters of the ion implantation are chosen such that a controlled curvature is obtained upon chemical strengthening.

First claim

1 . A glass substrate for chemical strengthening having first and second major opposing sides where at least a part of the first side of the substrate is provided with first implanted ions that reduce the extent of ion exchange upon chemical strengthening, and where the first implantation profile of the first implanted ions is such that the part of the first side provided with the first implanted ions shows a first controlled curvature upon chemical strengthening and where:
i) at least a part of the first side of the substrate is provided with second implanted ions that reduce the extent of ion exchange upon chemical strengthening and where the second implantation profile of the second implanted ions is different from the first implantation profile and where the second implantation profile is such that the part of the first side provided with the second implanted ions shows a second controlled curvature upon chemical strengthening, and/or ii) at least part of the second side of the substrate is provided with third implanted ions that reduce the extent of ion exchange upon chemical strengthening, and where the third implantation profile of the third implanted ions is such that the part of the second side provided with the third implanted ions shows a third controlled curvature upon chemical strengthening.

2 . The glass substrate according to claim 1 wherein where the first, second and/or third implanted ions are ions of O, Ar, N or He.

3 . The glass substrate according to claim 1 , wherein the first, second and/or third implanted ions are single charge ions or a mixture of single charge ions and multicharge ions.

4 . The glass substrate according to claim 1 , wherein the first, second and/or third implantation profile has a depth comprised between 0.1 μm and 1 μm.

5 . The glass substrate according to claim 1 , wherein the first, second and/or third implantation profile has an ion dosage comprised between 10 12 ions/cm 2 .

6 . The glass substrate according to claim 1 , wherein the first, second and/or third implanted ions have been implanted with an implantation energy comprised between n×5 keV and n×1000 keV.

7 . The glass substrate according to claim 1 , wherein the glass substrate is chosen among a soda-lime glass substrate and an alumino-silicate glass substrate.

8 . The glass substrate according to claim 1 , wherein the glass substrate's thickness is comprised between 0.1 mm and 3 mm.

9 . A method for making a chemically strengthened glass substrate comprising the following operations:
a) providing a substrate having first and second major opposing sides where at least a part of the first side of the substrate is provided with first implanted ions selected among the ions of O, Ar, N or He that reduce the extent of ion exchange upon chemical strengthening, b) chemically strengthening the ion implanted glass substrate.

10 . The method according to claim 9 , wherein at least a part of the first side of the substrate is provided with second implanted ions that reduce the extent of ion exchange upon chemical strengthening, and where the implantation profile of the second implanted ions is different from the first implantation profile.

11 . The method according to claim 9 , wherein at least part of the second side of the substrate has been provided with third implanted ions that reduce extent of ion exchange upon chemical strengthening.

12 . The method according to claim 9 , wherein the first, second and/or third ion implantation profiles are such that a first, second and/or third controlled curvature is obtained upon chemical strengthening.

13 . The method according to claim 9 , wherein the substrate's first and second opposing sides have differing ion exchange properties in their non-ion implanted state, the first being a high ion exchange side and the second being a low ion exchange side.

14 . The method according to claim 9 , wherein the substrate is provided with first implanted ions on the entirety of the first side.

15 . The method according to claim 13 , wherein the first ion implantation profile is such that a first controlled curvature comprised between −0.04×1/m and 0.04×1/m is obtained upon chemical strengthening.

16 . The method according to claim 11 , wherein the second and/or third implanted ions are selected among the ions of O, Ar, N or He.

17 . The method according to claim 11 , wherein the first, second and/or third implanted ions are single charge ions or a mixture of single charge ions and multicharge ions.

18 . The method according to claim 11 , wherein the implantation depth of the first, second and/or third ion implantation profiles is comprised between 0.1 μm and 1 μm.

19 . The method according to claim 11 , wherein the ion dosage of the first, second and/or third ion implantation profiles is comprised between 10 12 ions/cm 2 and 10 18 ions/cm 2 .

20 . The method according to claim 9 , wherein the glass substrate is chosen among a soda-lime glass substrate and an alumino-silicate glass substrate.

21 . The method according to claim 9 , wherein the glass substrate's thickness is comprised between 0.1 mm and 3 mm.

22 . A chemically strengthened glass substrate having first and second major opposing sides with differing ion exchange properties in their non-ion implanted state before chemical strengthening, the first being a high ion exchange side and the second being a low ion exchange side, having a thickness comprised between 0.1 mm and 3 mm, having a curvature comprised between −0.04×1/m and 0.04×1/m and wherein a first ion implantation profile is present on at least part of the first side and wherein the ions of the first ion implantation profile are selected among the ions of O, Ar, N or He.

23 . The chemically strengthened glass substrate according to claim 22 , having a curvature between −0.01×1/m and 0.01×1/m.

24 . The chemically strengthened glass substrate according to claim 22 having a thickness comprised between 0.1 mm and 1.6 mm.

25 . The chemically strengthened glass substrate according to claim 22 , having on both sides a compressive surface stress comprised between 300 and 1300 MPa and a depth of compressive layer comprised between 6 and 40 μm.

26 . The chemically strengthened glass substrate according to claim 22 , wherein the glass substrate is chosen among a soda-lime glass substrate and an alumino-silicate glass substrate.

27 . A method, comprising employing an ion implantation profile in a glass substrate for reducing the extent of ion exchange upon chemical strengthening of the glass substrate, wherein the ions of the ion implantation profile are selected among the ions of O, Ar, N or He.

28 . A method, comprising employing an ion implantation profile that reduces the extent of ion exchange upon chemical strengthening in a glass substrate to control the glass substrate curvature upon chemical strengthening wherein the ions of the ion implantation profile are selected among the ions of O, Ar, N or He.

29 . The method according to claim 27 , wherein the ions of the ion implantation profile are single charge ions or a mixture of single charge ions and multicharge ions.

30 . The method according to claim 27 , wherein the implantation depth of the ion implantation profile is comprised between 0.1 μm and 1 μm.

31 . The method a

Assignees

• Agc Glass Europe
• Asahi Glass Co Ltd

Inventors

• Navet Benjamine
• Boulanger Pierre

Classifications

• C03C23/0055 Primary

  by ion implantation · CPC title

• C03C3/091

  containing aluminium · CPC title

• C03C21/002 Primary

  to perform ion-exchange between alkali ions (C03C21/005 takes precedence) · CPC title

• C03C3/087

  containing calcium oxide, e.g. common sheet or container glass · CPC title