Polishing apparatus
US-9522453-B2 · Dec 20, 2016 · US
Polishing method
US2018369984A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018369984-A1 |
| Application number | US-201615777745-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 29, 2016 |
| Priority date | Dec 10, 2015 |
| Publication date | Dec 27, 2018 |
| Grant date | — |
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- Title
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Abstract
Official abstract text for this publication.
A polishing method including polishing to polish a surface of a wafer by sliding the wafer held by a polishing head on a surface of a polishing pad while supplying a polishing slurry to the polishing pad attached to a turntable, the method including correlation derivation to obtain a correlation between a surface temperature of the polishing pad and a haze level of a wafer polished with the use of the polishing pad in advance before performing the polishing, and also the wafer is polished in the polishing while controlling the surface temperature of the polishing pad based on the correlation between the surface temperature of the polishing pad and the haze level of the wafer polished with the use of the polishing pad. Consequently, the polishing method can control a haze in polishing a wafer and thereby prolong the service life of the polishing pad.
First claim
Opening claim text (preview).
1 .- 6 . (canceled) 7 . A polishing method comprising polishing to polish a surface of a wafer by sliding the wafer held by a polishing head on a surface of a polishing pad while supplying a polishing slurry to the polishing pad attached to a turntable, wherein the method comprises correlation derivation to obtain a correlation between a surface temperature of the polishing pad and a haze level of a wafer polished with the use of the polishing pad in advance before performing the polishing, and the wafer is polished in the polishing while controlling the surface temperature of the polishing pad based on the correlation between the surface temperature of the polishing pad and the haze level of the wafer polished with the use of the polishing pad. 8 . The polishing method according to claim 7 , wherein the correlation derivation is performed by carrying out test polishing on a plurality of test wafers with the use of polishing pads having different surface temperatures, measuring a haze level of each of the wafers after the test polishing, and thereby obtaining the correlation between the surface temperature of the polishing pad and the haze level of the wafer polished with the use of the polishing pad. 9 . The polishing method according to claim 7 , wherein, in the polishing, the surface temperature of the polishing pad is controlled by adjusting at least one of a temperature of the polishing slurry supplied to the polishing pad, the number of revolutions of the polishing head, and the number of revolutions of the turntable. 10 . The polishing method according to claim 8 , wherein, in the polishing, the surface temperature of the polishing pad is controlled by adjusting at least one of a temperature of the polishing slurry supplied to the polishing pad, the number of revolutions of the polishing head, and the number of revolutions of the turntable. 11 . The polishing method according to claim 7 , wherein, in the polishing, the surface temperature of the polishing pad is controlled by heating the surface of the polishing pad with the use of a heater and/or cooling the surface of the polishing pad based on injection of cold air. 12 . The polishing method according to claim 8 , wherein, in the polishing, the surface temperature of the polishing pad is controlled by heating the surface of the polishing pad with the use of a heater and/or cooling the surface of the polishing pad based on injection of cold air. 13 . The polishing method according to claim 9 , wherein, in the polishing, the surface temperature of the polishing pad is controlled by heating the surface of the polishing pad with the use of a heater and/or cooling the surface of the polishing pad based on injection of cold air. 14 . The polishing method according to claim 10 , wherein, in the polishing, the surface temperature of the polishing pad is controlled by heating the surface of the polishing pad with the use of a heater and/or cooling the surface of the polishing pad based on injection of cold air. 15 . The polishing method according to claim 7 , wherein the correlation is obtained by periodically performing the correlation derivation, and the surface temperature of the polishing pad is controlled based on the periodically obtained correlation. 16 . The polishing method according to claim 8 , wherein the correlation is obtained by periodically performing the correlation derivation, and the surface temperature of the polishing pad is controlled based on the periodically obtained correlation. 17 . The polishing method according to claim 9 , wherein the correlation is obtained by periodically performing the correlation derivation, and the surface temperature of the polishing pad is controlled based on the periodically obtained correlation. 18 . The polishing method according to claim 11 , wherein the correlation is obtained by periodically performing the correlation derivation, and the surface temperature of the polishing pad is controlled based on the periodically obtained correlation. 19 . The polishing method according to claim 7 , wherein the polishing is final polishing after rough polishing. 20 . The polishing method according to claim 8 , wherein the polishing is final polishing after rough polishing. 21 . The polishing method according to claim 9 , wherein the polishing is final polishing after rough polishing. 22 . The polishing method according to claim 11 , wherein the polishing is final polishing after rough polishing. 23 . The polishing method according to claim 15 , wherein the polishing is final polishing after rough polishing.
Assignees
Inventors
Classifications
comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title
of semiconductor materials · CPC title
Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US2018369984A1 cover?
- A polishing method including polishing to polish a surface of a wafer by sliding the wafer held by a polishing head on a surface of a polishing pad while supplying a polishing slurry to the polishing pad attached to a turntable, the method including correlation derivation to obtain a correlation between a surface temperature of the polishing pad and a haze level of a wafer polished with the use…
- Who is the assignee on this patent?
- Shinetsu Handotai Kk
- What technology area does this patent fall under?
- Primary CPC classification B24B37/015. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Thu Dec 27 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).