Plasma health determination in semiconductor substrate processing reactors

Patent metadata

Field	Value
Publication number	US-2018366378-A1
Application number	US-201715625454-A
Country	US
Kind code	A1
Filing date	Jun 16, 2017
Priority date	Jun 16, 2017
Publication date	Dec 20, 2018
Grant date	—

Abstract

Methods of monitoring a plasma while processing a semiconductor substrate are described. In embodiments, the methods include determining the difference in power between the power delivered from the plasma power supply and the power received by the plasma in a substrate processing chamber. The power received may be determined using a V/I sensor positioned after the matching circuit. The power reflected or the power lost is the difference between the delivered power and the received power. The process may be terminated by removing the delivered power if the reflected power is above a setpoint. The V RF may further be fourier transformed into frequency space and compared to the stored fourier transform of a healthy plasma process. Missing frequencies from the V RF fourier transform may independently or further indicate an out-of-tune plasma process and the process may be terminated.

First claim

1 . A method of forming a plasma, the method comprising:
flowing a precursor into a region, wherein the region is within a substrate processing chamber; turning on an RF power from an RF power supply disposed outside the region; analyzing the RF power in a V/I probe disposed between the RF power supply and the region, wherein analyzing the RF power in the V/I probe determines a time-based voltage spectrum, voltage amplitude, a current amplitude and a voltage-current phase difference; delivering the RF power to region to excite an RF plasma within the region from the precursor; calculating a power delivered to the RF plasma by multiplying the voltage amplitude by the current amplitude and further by a cosine of the voltage-current phase difference; calculating a power difference between the RF power and the power delivered to the RF plasma and then calculating a dimensionless ratio of the power difference to the RF power; calculating a candidate frequency-based voltage spectrum from the time-based voltage spectrum; comparing a frequency-based voltage spectrum difference between the candidate frequency-based voltage spectrum and a known-good frequency-based voltage spectrum to determine whether features present in either frequency-based spectrum are missing from the other frequency-based spectrum; terminating the RF power from the RF power supply if the dimensionless ratio is greater than 0.21 or a feature present in either frequency-based spectrum is missing from the other frequency-based spectrum.

2 . The method of forming the plasma of claim 1 wherein the precursor comprises fluorine.

3 . The method of forming the plasma of claim 1 wherein the RF plasma is between 1 watt and 1,000 watts.

4 . The method of forming the plasma of claim 1 wherein a pressure in the region is between 70 mTorr and 50 Torr.

5 . The method of forming the plasma of claim 1 wherein the region is a substrate processing region housing a substrate.

6 . The method of forming the plasma of claim 1 wherein the region is a remote plasma region separated from a substrate processing region housing a semiconductor substrate and the remote plasma region is separated from the substrate processing region by a showerhead.

7 . The method of forming the plasma of claim 6 wherein the substrate processing region is plasma-free during excitation of the RF plasma in the remote plasma region.

8 . The method of forming the plasma of claim 6 wherein an electron temperature within the substrate processing region is less than 0.5 eV during excitation of the plasma.

9 . The method of forming the plasma of claim 1 wherein an RF frequency of the RF power is less than 200 kHz, between 10 MHz and 15 MHz or greater than 1 GHz during excitation of the RF plasma.

10 . The method of forming the plasma of claim 1 wherein terminating the RF power from the RF power supply comprises applying no RF power to the region before processing a substrate or before completely processing a substrate with the RF plasma.

11 . A method of forming a local plasma, the method comprising:
flowing a precursor into a substrate processing region housing a semiconductor substrate, wherein the substrate processing region is within a substrate processing chamber; turning on a local RF power from an RF power supply disposed outside the substrate processing chamber; analyzing the local RF power in a V/I probe disposed between the RF power supply and the substrate processing region, wherein analyzing the local RF power in the V/I probe determines a voltage amplitude, a current amplitude and a voltage-current phase difference; delivering the local RF power to the substrate processing region to excite a local RF plasma within the substrate processing region from the precursor; calculating a power delivered to the local RF plasma by multiplying the voltage amplitude by the current amplitude and further by a cosine of the voltage-current phase difference; calculating a power difference between the local RF power and the power delivered to the local RF plasma and then calculating a dimensionless ratio of the power difference to the local RF power; terminating the local RF power from the RF power supply if the dimensionless ratio is greater than 0.30.

12 . The method of forming the local plasma of claim 11 wherein the voltage amplitude and the current amplitude are RMS values.

13 . A method of forming a plasma, the method comprising:
flowing a precursor into a substrate processing region housing a semiconductor substrate, wherein the substrate processing region are within a substrate processing chamber; turning on a bias RF power from an RF power supply disposed outside the substrate processing region; acquiring a time-based voltage spectrum of the bias RF power; delivering the bias RF power to the substrate processing region to excite a bias RF plasma within the substrate processing region from the precursor; calculating a candidate frequency-based voltage spectrum from the time-based voltage spectrum; comparing a frequency-based voltage spectrum difference between the candidate frequency-based voltage spectrum and a known-good frequency-based voltage spectrum; terminating the bias RF power from the RF power supply if features present in either frequency-based spectrum are missing from the other frequency-based spectrum.

14 . The method of forming the plasma of claim 13 wherein the frequency-based voltage spectrum difference comprises at least one peak at a frequency which is an integral multiple of a primary frequency of the bias RF power.

15 . The method of forming the plasma of claim 13 wherein the bias RF plasma is capacitively-coupled.

Assignees

• Applied Materials Inc

Inventors

• Kim Junghoon
• Park Soonam
• Cho Tae Seung
• Lubomirsky Dmitry
• Kalnin Nikolai

Classifications

• H10P50/287

  by chemical means · CPC title

• H10P74/20

  characterised by the properties tested or measured, e.g. structural or electrical properties · CPC title

• H10P74/00

  Testing or measuring during manufacture or treatment of wafers, substrates or devices · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H01J37/3244

  Gas supply means · CPC title