Germanium- and zirconium-containing compositions for vapor deposition of zirconium-containing films
US-9499571-B2 · Nov 22, 2016 · US
US2018346494A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018346494-A1 |
| Application number | US-201815994110-A |
| Country | US |
| Kind code | A1 |
| Filing date | May 31, 2018 |
| Priority date | Jun 1, 2017 |
| Publication date | Dec 6, 2018 |
| Grant date | — |
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A novel compound chlorosilylarylgermane, a method for preparing the compound, and the use of the compound are described. A method for preparing trichlorosilyltrichlorogermane and the use of trichlorosilyltrichlorogermane are also described.
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1 . A chlorosilylarylgermane of formula (I): XGe(Y 2 )—SiCl 3 (I), where X=Y or X=[—Ge(Y 2 )—SiCl 3 ] and each Y is independently a phenyl group. 2 . The chlorosilylarylgermane according to claim 1 , which is selected from the group consisting of trichlorosilyltriphenylgermane and 1,2-bis(trichlorosilyl)-1,1,2,2-tetraphenyldigermane. 3 . A method for preparing the chlorosilylarylgermane according to claim 1 , the method comprising: (a) dissolving an arylchlorogermane with hexachlorodisilane in a solvent and (b) reacting in the presence of a catalyst at a temperature of 5 to 40° C., wherein the aryl groups of the arylchlorogermane are each independently phenyl. 4 . The method according to claim 3 , wherein the reacting (b) is carried out at room temperature. 5 . The method according to claim 3 , wherein the arylchlorogermane is at least one selected from the group consisting of a triarylchlorogermane and a diaryldichlorogermane, a molar ratio of the triarylchlorogermane, when present, to hexachlorodisilane is 1:1, and a molar ratio of the diaryldichlorogermane, when present, to hexachlorodisilane is 1:2. 6 . The method according to claim 3 , wherein the arylchlorogermane is at least one selected from the group consisting of triphenylchlorogermane and diphenyldichlorogermane. 7 . The method according to claim 3 , wherein the solvent is dichloromethane. 8 . The method according to claim 3 , wherein the catalyst comprises a phosphonium chloride [R 4 P]Cl or an ammonium chloride salt [R 4 N]Cl, where each R is independently Me, Et, iPr, nBu, Ph. 9 . The method according to claim 3 , wherein the catalyst is used in an amount of 0.001 to 1 mol per mole of hexachlorodisilane. 10 . The method according to claim 3 , wherein at least 5 mol of the solvent is used per mole of hexachlorodisilane. 11 . The method according to claim 3 , wherein the reacting (b) is carried out with thorough mixing and over a period of 1 to 24 hours, the solvent is subsequently removed, and the chlorosilylarylgermane is obtained as a crystalline product. 12 . A method for generating a GeSi layer, the method comprising: preparing the GeSi layer from the chlorosilylarylgermane according to claim 1 . 13 . A method for preparing trichlorosilyltrichlorogermane, the method comprising: dissolving GeCl 4 with hexachlorodisilane in a solvent and reacting in the presence of a catalyst at a temperature of 5 to 40° C. 14 . A method for generating a GeSi layer, the method comprising: preparing the GeSi layer from trichlorosilyltrichlorogermane obtained by the method according to claim 13 .
Silicon, silicon germanium or germanium · CPC title
using solutions · CPC title
Crystalline forms, e.g. polymorphs · CPC title
Germanium compounds · CPC title
Compounds of germanium · CPC title
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