Dummy assist features for pattern support

Patent metadata

Field	Value
Publication number	US-2018337045-A1
Application number	US-201715597277-A
Country	US
Kind code	A1
Filing date	May 17, 2017
Priority date	May 17, 2017
Publication date	Nov 22, 2018
Grant date	—

Abstract

Methods of forming printed patterns and structures formed using printed patterns. A first line and a second line are lithographically printed in a first layer composed of photoimageable material with a space arranged between the first line and the second line. A dummy assist feature is also lithographically printed in the photoimageable material of the first layer. A second layer underlying the first layer is etched with the first line, the second line, and the dummy assist feature present as an etch mask. The dummy assist feature is arranged on a portion of the space adjacent to the first line and supports the photoimageable material of the first line during etching.

First claim

1 . A method comprising:
lithographically printing, in a first layer composed of photoimageable material, a first line, a second line, and a space between the first line and the second line; lithographically printing a first dummy assist feature in the photoimageable material of the first layer; and etching a second layer underlying the first layer with the first line, the second line, and the first dummy assist feature present as an etch mask, wherein the first dummy assist feature is arranged on a first portion of the space adjacent to the first line and supports the photoimageable material of the first line during etching.

2 . The method of claim 1 wherein the first line has a sidewall, the second line has a sidewall, and the first dummy assist feature extends across the space from the sidewall of the first line to the sidewall of the second line.

3 . The method of claim 2 wherein the first line is arranged parallel to the second line.

4 . The method of claim 1 wherein the first line has a sidewall, the second line has a sidewall, and the first dummy assist feature extends partially across the space from the sidewall of the first line toward the sidewall of the second line.

5 . The method of claim 4 wherein the first line is arranged parallel to the second line.

6 . The method of claim 1 comprising:
printing a second dummy assist feature in the photoimageable material of the first layer,
wherein the second dummy assist feature is arranged on a second portion of the space adjacent to the second line and supports the photoimageable material of the second line during etching.

7 . The method of claim 6 wherein the second dummy assist feature is spaced along a length of the second line from the first dummy assist feature.

8 . The method of claim 6 wherein the first line has a sidewall, the second line has a sidewall, the first dummy assist feature extends partially across the space from the sidewall of the first line toward the sidewall of the second line, and the second dummy assist feature extends partially across the space from the sidewall of the second line toward the sidewall of the first line.

9 . The method of claim 1 wherein, before etching, the space is an area located on a top surface of the second layer.

10 . The method of claim 7 wherein the first line, the second line, the space, and the first dummy assist feature comprise a pattern formed in the photoimageable material of the first layer, and etching the second layer underlying the first layer comprises:
transferring the pattern from the first layer to the second layer to form a pattern in the second layer that includes a first line, a second line, and a feature underlying the first dummy assist feature of the first layer.

11 . The method of claim 10 wherein the feature is located between a section of the first line of the second layer and a section of the second line of the second layer, and comprising:
removing the feature of the second layer, the section of the first line of the second layer, and the section of the second line of the second layer.

12 . The method of claim 10 wherein the first line includes a first section and a second section, the first portion of the space is arranged adjacent to the first section, and comprising:
cutting the first line to isolate the first section of the first line from the second section of the first line.

13 . The method of claim 1 wherein the second layer is comprised of a low-k dielectric material, and etching the second layer underlying the first layer comprises:
forming a trench in the low-k dielectric material between the first line and the second line during etching,
wherein the first dummy assist feature masks the low-k dielectric material over an area when the trench is formed.

14 . The method of claim 13 further comprising:
filling the trench with a conductor to form an interconnect,
wherein the interconnect includes a notch at the area masked by the first dummy assist feature.

15 . The method of claim 13 wherein the first line has a sidewall, the second line has a sidewall, and the first dummy assist feature extends partially across the space from the sidewall of the first line toward the sidewall of the second line.

16 . The method of claim 1 wherein the second layer is composed of a semiconductor material, and etching the second layer underlying the first layer comprises:
forming a first semiconductor fin correlated in position with the first line and a second semiconductor fin correlated in position with the second line,
wherein a feature is located in the space between the first semiconductor fin and the second semiconductor fin and is correlated in position with the first dummy assist feature.

17 . The method of claim 1 wherein the first dummy assist feature is transferred during etching to the second layer and forms a feature in the second layer over an area of the first portion of the space.

18 . A structure comprising:
a first linear feature; a second linear feature arranged relative to the first linear feature and separated from the first linear feature by a space; and a dummy assist feature is associated with a first portion of the space adjacent to the first linear feature, wherein the first linear feature and the second linear feature are semiconductor fins or interconnects.

19 . The structure of claim 18 wherein the first line has a sidewall, the second line has a sidewall, and the dummy assist feature extends across the space from the sidewall of the first line to the sidewall of the second line.

20 . The structure of claim 18 wherein the first line has a sidewall, the second line has a sidewall, and the dummy assist feature extends partially across the space from the sidewall of the first line toward the sidewall of the second line.

Assignees

• Globalfoundries Inc

Inventors

• Sun Lei
• Xie Ruilong
• Wang Wenhui
• Chen Yulu
• Verduijn Erik
• Qi Zhengqing John
• Ning Guoxiang
• Dechene Daniel J

Classifications

• H10P76/2043 Primary

  using an anti-reflective coating · CPC title

• H10P50/693

  characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10W20/089

  using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning · CPC title