Indium containing magnetic garnet materials

US2018330854A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2018330854-A1
Application numberUS-201815972617-A
CountryUS
Kind codeA1
Filing dateMay 7, 2018
Priority dateMay 10, 2017
Publication dateNov 15, 2018
Grant date

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  1. Title

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Abstract

Official abstract text for this publication.

Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of gadolinium can be added into specific sites in the crystal structure of the synthetic garnet by incorporating indium, a trivalent element. By including both indium and increased amounts of gadolinium, the dielectric constant can be improved. Thus, embodiments of the disclosed material can be advantageous in both above and below resonance applications, such as for isolators and circulators.

First claim

Opening claim text (preview).

What is claimed is: 1 . A synthetic garnet material comprising a structure including bismuth, gadolinium, iron, and indium, the synthetic garnet material having a dielectric constant value of at least 35. 2 . The synthetic garnet material of claim 1 wherein the synthetic garnet material has the chemical formula Bi x Ca s+y Gd z Y 3-s-x-y-z Fe 5-r-y In r Hf s Zr y O 12 , 0<x≤2.5, 0≤y≤1.0, 0≤s≤1.0, 0<r≤1.0, and 0<z≤1.0. 3 . The synthetic garnet material of claim 2 wherein 1.0≤x≤2.0, 0.3≤r≤0.7, 0.2≤s+y≤0.7, and 0<z≤1.0. 4 . The synthetic garnet material of claim 2 wherein s=0 and y=0. 5 . The synthetic garnet material of claim 1 wherein the synthetic garnet material has a composition of Bi 1.68 Gd 1.32 In 0.8 Fe 4.18 O 11.97 , Bi 1.68 Gd 1.11 Ca 0.21 In 0.39 Zr 0.21 Fe 4.38 O 11.97 , Bi 1.68 Gd 1.08 Ca 0.24 In 0.36 Zr 0.24 Fe 4.38 O 11.97 , Bi 1.68 Gd 1.05 Ca 0.27 In 0.33 Zr 0.27 Fe 4.38 O 11.97 , or Bi 1.68 Gd 1.02 Ca 0.3 In 0.3 Zr 0.3 Fe 4.38 O 11.97 . 6 . The synthetic garnet material of claim 1 wherein the synthetic garnet material has the chemical formula Bi 1-x Gd x Fe 5-y In y O 1 , 0<x<2.0, 0<y<1.0. 7 . The synthetic garnet material of claim 1 wherein the synthetic garnet material does not include calcium or zirconium. 8 . The synthetic garnet material of claim 1 wherein the synthetic garnet material has a dielectric constant of at least 40. 9 . The synthetic garnet material of claim 1 wherein the synthetic garnet material has a dielectric loss below 0.00250. 10 . A method of manufacturing a synthetic garnet material having a dielectric constant of at least 35, the method comprising: blending a raw material including oxides and/or carbonites; and calcining the blended materials to form a synthetic garnet material having a crystal structure including bismuth, gadolinium, iron, and indium and having a dielectric constant of at least 35. 11 . The method of claim 10 further comprising forming an isolator or circulator from the synthetic garnet material. 12 . The method of claim 10 wherein the synthetic garnet material has a dielectric constant of at least 40. 13 . The method of claim 10 wherein the synthetic garnet material has the chemical formula Bi x Ca s+y Gd z Y 3-s-x-y-z Fe 5-r-s-y In r Hf s Zr y O 12 , 0<x≤2.5, 0≤y≤1.0, 0≤s≤1.0, 0<r≤1.0, and 0<z≤1.0. 14 . The method of claim 13 wherein 1.0≤x≤2.0, 0.3≤r≤0.7, 0.2≤s+y≤0.7, and 0<z≤1.0. 15 . A radiofrequency device comprising: a synthetic garnet material including a structure including bismuth, gadolinium, iron, and indium, the synthetic garnet material having a dielectric constant value of at least 35. 16 . The radiofrequency device of claim 15 wherein the radiofrequency device is incorporated into an antenna. 17 . The radiofrequency device of claim 15 wherein the radiofrequency device is an isolator or circulator. 18 . The radiofrequency device of claim 15 wherein the synthetic garnet material has the chemical formula Bi x Ca s+y Gd z Y 3-s-x-y-z Fe 5-r-s-y In r Hf s Zr y O 12 , 0<x≤2.5, 0≤y≤1.0, 0≤s≤1.0, 0<r≤1.0, and 0<z≤1.0. 19 . The radiofrequency device of claim 18 wherein 1.0≤x≤2.0, 0.3≤r≤0.7, 0.2≤s+y≤0.7, and 0<z≤1.0. 20 . The radiofrequency device of claim 15 wherein the synthetic garnet material has a dielectric constant of at least 40.

Assignees

Inventors

Classifications

  • H01F1/10Primary

    non-metallic substances, e.g. ferrites {, e.g. [(Ba,Sr)O(Fe2O3)6] ferrites with hexagonal structure} · CPC title

  • Isolators · CPC title

  • containing one alkaline earth metal, magnesium or lead · CPC title

  • containing one rare earth metal, yttrium or scandium · CPC title

  • containing zinc · CPC title

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What does patent US2018330854A1 cover?
Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of gadolinium can be added into specific sites in the crystal structure of the synthetic garnet by incorporating indium, a trivalent element. By including both indium and increased amounts of gadolinium, the dielectric constant can be improved. Thus, embodiments…
Who is the assignee on this patent?
Skyworks Solutions Inc
What technology area does this patent fall under?
Primary CPC classification H01F1/10. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Nov 15 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).