Semiconductor device manufacturing method and semiconductor device manufactured using the same
US-2024395745-A1 · Nov 28, 2024 · US
Photoelectric conversion device
US2018301495A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018301495-A1 |
| Application number | US-201715770742-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 22, 2017 |
| Priority date | Feb 29, 2016 |
| Publication date | Oct 18, 2018 |
| Grant date | — |
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Abstract
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An off-leakage current of a photodiode is reduced in a photoelectric conversion device. A photoelectric conversion device (100) includes: an oxide semiconductor layer (5) provided on a substrate (1); a passivation film (6) and a planarizing film (7) which are stacked on the oxide semiconductor layer; and a photodiode (9) including a lower electrode (91), a photoelectric conversion layer (92), and an upper electrode (93). The lower electrode is connected to a source electrode (4) via a contact hole provided in the passivation film and the planarizing film. No photoelectric conversion layer is provided directly above the contact hole.
First claim
Opening claim text (preview).
1 . A photoelectric conversion device, comprising: a substrate; a thin film transistor provided on the substrate; a first insulating layer stacked on the thin film transistor; and a photodiode including an upper electrode, a lower electrode, and a photoelectric conversion layer which is provided between the upper electrode and the lower electrode, the lower electrode of the photodiode being connected to a drain electrode of the thin film transistor, via a first contact hole secured in the first insulating layer, no photoelectric conversion layer being provided directly above the first contact hole. 2 . The photoelectric conversion device as set forth in claim 1 , wherein: a source electrode of the photodiode is provided directly above the first contact hole. 3 . The photoelectric conversion device as set forth in claim 2 , wherein: the first contact hole and. the source electrode of the photodiode are provided in a center of adjacent drain electrodes of the thin film transistor.
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Classifications
SSIS architectures; Circuits associated therewith · CPC title
Electricity · mapped topic
- H01L27/14636Primary
Electricity · mapped topic
Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title
Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)} · CPC title
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- What does patent US2018301495A1 cover?
- An off-leakage current of a photodiode is reduced in a photoelectric conversion device. A photoelectric conversion device (100) includes: an oxide semiconductor layer (5) provided on a substrate (1); a passivation film (6) and a planarizing film (7) which are stacked on the oxide semiconductor layer; and a photodiode (9) including a lower electrode (91), a photoelectric conversion layer (92), a…
- Who is the assignee on this patent?
- Sharp Kk
- What technology area does this patent fall under?
- Primary CPC classification H01L27/14636. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Oct 18 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).