Microchip charge patterning

Patent metadata

Field	Value
Publication number	US-2018294232-A1
Application number	US-201816008961-A
Country	US
Kind code	A1
Filing date	Jun 14, 2018
Priority date	Oct 15, 2012
Publication date	Oct 11, 2018
Grant date	—

Abstract

A method of forming a charge pattern on a microchip includes depositing a material on the surface of the microchip, and immersing the microchip in a fluid to develop charge in or on the material through interaction with the surrounding fluid.

First claim

What is claimed is:

1 . A method of forming a charge pattern on a microchip, comprising:
depositing a material on the surface of the microchip; and immersing the microchip in a non-polar solution to develop charge in or on the material through interaction with the surrounding non-polar solution.

2 . The method of claim 1 , wherein depositing a material on the surface comprises depositing a thin film of the material.

3 . The method of claim 2 , wherein depositing the thin film comprises one of spin-coating, printing, dip-coating, self-assembly, or vapor deposition.

4 . The method of claim 1 , wherein depositing the material comprises surface deposition of a material having at least one of sulfonic acid, phosphonic acid, and carboxyllic acid functionality.

5 . The method of claim 1 , wherein depositing the material comprises depositing a material having at least one of amine and imidizole functionality.

6 . The method of claim 1 , wherein the non-polar solution is one of an isopar series of liquids, a hydrocarbon liquids, or dodecane.

7 . The method of claim 1 , where the non-polar solution contains a charge-director added to the fluid, wherein the charge-director comprises one of an amphiphilic material, lecithin, span-80, alohas, OLOA, or AOT.

8 . The method of claim 2 , wherein the material is one of either an anionic or cationic polyelectrolyte, a metal oxide, has the capability of forming a self-assembled monolayer, a non-iconic polymer, or an organometallic salt.

9 . The method of claim 8 , wherein the material is one of polystyrenesulfonic acid, poly(diallyldimethylammonium chloride), silicon dioxide, aluminum oxide, polyethylene, polyvinylalcohol, aluminum stearate, zinc stearate.

10 . The method of claim 1 , further comprising singulating the wafer into microchips before charging.

11 . The method of claim 1 , further comprising singulating the wafer into microchips after charging.

12 . A method of forming a charge pattern on a microchip, comprising:
depositing an oxide on an insulator surface of the microchip; depositing a self-assembled monolayer on the oxide material on the insulator surface of the microchip; patterning the self-assembled monolayer to reveal a portion of the oxide; and immersing the microchip in fluid to develop charges on at least of the oxide or the self-assembled monolayer through dissociation of surface molecules of the oxide and the self-assembled monolayer.

13 . The method of claim 12 , wherein the self-assembled monolayer is formed from at least one of octadecyltrichlorosilane, phenethyltrichlorosilane, hexamethyldisilazane, allyltrimethoxysilane, or perfluorooctyltrichlorosilane.

14 . The method of claim 12 , wherein patterning the self-assembled monolayer includes using photolithography and etching of the self-assembled monolayer.

15 . The method of claim 12 , wherein the fluid is a non-polar solution.

16 . The method of claim 12 , wherein the fluid is air.

17 . A method of forming a charge pattern on a microchip, comprising:
depositing an oxide on an insulator surface of the microchip; patterning a sacrificial blocking material onto a portion of the oxide; depositing a self-assembled monolayer on the oxide material on the insulator surface of the microchip and the sacrificial blocking material; removing the sacrificial blocking material after depositing the self-assembled monolayer to reveal the oxide; and immersing the microchip in fluid to develop charges on the oxide and the self-assembled monolayer through dissociation of surface molecules of at least one of the oxide and the self-assembled monolayer.

18 . The method of claim 12 , wherein the self-assembled monolayer is formed from at least one of octadecyltrichlorosilane, phenethyltrichlorosilane, hexamethyldisilazane, allyltrimethoxysilane or perfluorooctyltrichlorosilane.

19 . The method of claim 12 , wherein the sacrificial blocking material is a photoresist.

20 . The method of claim 12 , wherein the fluid is a non-polar solution.

Assignees

• Palo Alto Res Ct Inc

Inventors

• Chow Eugene M
• Lu Jenping
• Volkel Armin R
• Hsieh Bing R
• Whiting Gregory L
• Doris Sean E

Classifications

• H10W72/0198

  batch processes · CPC title

• H10W46/401

  for identification or tracking · CPC title

• H10W46/301

  for alignment · CPC title

• H10W46/101

  characterised by the type of information, e.g. logos or symbols · CPC title

• H10W46/00 Primary

  Marks applied to devices, e.g. for alignment or identification · CPC title