Epitaxial wafer and method for manufacturing same
US-2016326668-A1 · Nov 10, 2016 · US
Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device
US2018277635A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018277635-A1 |
| Application number | US-201615762147-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 23, 2016 |
| Priority date | Nov 24, 2015 |
| Publication date | Sep 27, 2018 |
| Grant date | — |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A silicon carbide epitaxial substrate has a silicon carbide single-crystal substrate and a silicon carbide layer. An average value of carrier concentration in the silicon carbide layer is not less than 1×1015 cm−3 and not more than 5×1016 cm−3. In-plane uniformity of the carrier concentration is not more than 2%. The second main surface has: a groove 80 extending in one direction along the second main surface, a width of the groove in the one direction being twice or more as large as a width thereof in a direction perpendicular to the one direction, and a maximum depth of the groove from the second main surface being not more than 10 nm; and a carrot defect. A value obtained by dividing a number of the carrot defects by a number of the grooves is not more than 1/500.
First claim
Opening claim text (preview).
1 . A silicon carbide epitaxial substrate comprising: a silicon carbide single-crystal substrate including a first main surface; and a silicon carbide layer on the first main surface, the silicon carbide layer including a second main surface opposite to a surface thereof in contact with the silicon carbide single-crystal substrate, an average value of carrier concentration in the silicon carbide layer being not less than 1×10 15 cm −3 and not more than 5×10 16 cm −3 , in-plane uniformity of the carrier concentration being not more than 2%, the second main surface having a groove extending in one direction along the second main surface, a width of the groove in the one direction being twice or more as large as a width thereof in a direction perpendicular to the one direction, and a maximum depth of the groove from the second main surface being not more than 10 nm, and a carrot defect, a value obtained by dividing a number of the carrot defects by a number of the grooves being not more than 1/500. 2 . The silicon carbide epitaxial substrate according to claim 1 , wherein the groove includes a first groove portion and a second groove portion provided continuously with the first groove portion, the first groove portion is at one end portion of the groove in the one direction, and the second groove portion extends from the first groove portion along the one direction to the other end portion opposite to the one end portion, and has a depth from the second main surface which is smaller than a maximum depth of the first groove portion. 3 . The silicon carbide epitaxial substrate according to claim 1 , wherein the value is not more than 1/1000. 4 . The silicon carbide epitaxial substrate according to claim 3 , wherein the value is not more than 1/5000. 5 . The silicon carbide epitaxial substrate according to claim 1 , wherein a density of the carrot defects in the second main surface is not more than 1 cm −2 . 6 . The silicon carbide epitaxial substrate according to claim 5 , wherein the density is not more than 0.5 cm −2 . 7 . The silicon carbide epitaxial substrate according to claim 6 , wherein the density is not more than 0.1 cm −2 . 8 . A method of manufacturing a silicon carbide semiconductor device, comprising: preparing the silicon carbide epitaxial substrate according to claim 1 ; and processing the silicon carbide epitaxial substrate.
Assignees
Inventors
Classifications
N-type · CPC title
Silicon carbide · CPC title
Crystal orientations · CPC title
Silicon carbide · CPC title
using chemical vapour deposition [CVD] · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US2018277635A1 cover?
- A silicon carbide epitaxial substrate has a silicon carbide single-crystal substrate and a silicon carbide layer. An average value of carrier concentration in the silicon carbide layer is not less than 1×1015 cm−3 and not more than 5×1016 cm−3. In-plane uniformity of the carrier concentration is not more than 2%. The second main surface has: a groove 80 extending in one direction along the seco…
- Who is the assignee on this patent?
- Sumitomo Electric Industries
- What technology area does this patent fall under?
- Primary CPC classification C30B25/20. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Sep 27 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).