Manufacturing Method of Light Emitting Diode Device and Light Emitting Diode Device

Patent metadata

Field	Value
Publication number	US-2018269352-A1
Application number	US-201715813803-A
Country	US
Kind code	A1
Filing date	Nov 15, 2017
Priority date	Mar 15, 2017
Publication date	Sep 20, 2018
Grant date	—

Abstract

A manufacturing method of a light emitting diode device and a light emitting diode device are provided. The manufacturing method of the light emitting diode device includes: forming a light emitting lamination layer on a base substrate, the light emitting lamination layer including a first semiconductor layer, a first light emitting layer, a second semiconductor layer, a second light emitting layer and a third semiconductor layer sequentially formed on the base substrate; dividing the light emitting lamination layer to form a plurality of light emitting units spaced from each other, each light emitting unit including a first area and a second area spaced from each other; and removing the third semiconductor layer and the second light emitting layer in the first area to form a first sub light emitting unit, and the second area being used for forming a second sub light emitting unit.

First claim

1 . A manufacturing method of a light emitting diode (LED) device, comprising:
forming a light emitting lamination layer on a base substrate, the light emitting lamination layer comprising a first semiconductor layer with a first conductive type, a first light emitting layer, a second semiconductor layer with a second conductive type, a second light emitting layer and a third semiconductor layer with the first conductive type sequentially formed on the base substrate; dividing the light emitting lamination layer to form a plurality of light emitting units spaced from each other, each light emitting unit comprising a first area and a second area spaced from each other; and removing the third semiconductor layer and the second light emitting layer in the first area to form a first sub light emitting unit, and the second area being used for forming a second sub light emitting unit.

2 . The manufacturing method of the light emitting diode device according to claim 1 , further comprising:
etching the second semiconductor layer and the first light emitting layer of the first sub light emitting unit to expose a portion of the first semiconductor layer; and etching the third semiconductor layer and the second light emitting layer of the second sub light emitting unit to expose a portion of the second semiconductor layer.

3 . The manufacturing method of the light emitting diode device according to claim 2 , further comprising:
in the first sub light emitting unit, forming a first electrode and a second electrode respectively on an exposed portion of the first semiconductor layer and the second semiconductor layer; and in the second sub light emitting unit, forming a third electrode and a fourth electrode respectively on the third semiconductor layer and an exposed portion of the second semiconductor layer.

4 . The manufacturing method of the light emitting diode device according to claim 3 , wherein,
the light emitting lamination layer further comprises a third light emitting layer and a fourth semiconductor layer with the second conductive type sequentially formed on the third semiconductor layer; each light emitting unit further comprises a third area spaced apart from the first area and the second area; the manufacturing method comprises:
removing the fourth semiconductor layer, the third light emitting layer, the third semiconductor layer and the second light emitting layer in the first area to form the first sub light emitting unit, and
removing the fourth semiconductor layer and the third light emitting layer in the second area to form the second sub light emitting unit, and the third area being used for forming a third sub light emitting unit.

5 . The manufacturing method of the light emitting diode device according to claim 4 , further comprising:
etching the fourth semiconductor layer and the third light emitting layer of the third sub light emitting unit to expose a portion of the third semiconductor layer.

6 . The manufacturing method of the light emitting diode device according to claim 5 , further comprising:
in the third sub light emitting unit, forming a fifth electrode and a sixth electrode respectively on an exposed portion of the third semiconductor layer and the fourth semiconductor layer.

7 . The manufacturing method of the light emitting diode device according to claim 3 , further comprising:
providing a substrate; forming a plurality of contact electrodes insulated from each other on the substrate; and bonding each light emitting unit to the substrate, each light emitting unit being electrically connected with corresponding contact electrodes.

8 . The manufacturing method of the light emitting diode device according to claim 6 , further comprising:
providing a substrate; forming a plurality of contact electrodes insulated from each other on the substrate; and bonding each light emitting unit to the substrate, each light emitting unit being electrically connected with corresponding contact electrodes.

9 . The manufacturing method of the light emitting diode device according to claim 1 , further comprising: forming a buffer layer on the base substrate,
wherein, the light emitting lamination layer is formed on the buffer layer.

10 . The manufacturing method of the light emitting diode device according to claim 3 , further comprising: forming a buffer layer on the base substrate,
wherein, the light emitting lamination layer is formed on the buffer layer.

11 . A light emitting diode (LED) device, comprising:
a plurality of light emitting units, each light emitting unit comprising a first sub light emitting unit and a second light emitting unit spaced apart from each other; wherein, the first sub light emitting unit comprises a first semiconductor layer with a first conductive type, a first light emitting layer and a second semiconductor layer with a second conductive type, which are sequentially disposed; and the second sub light emitting unit comprises the first semiconductor layer, the first light emitting layer, the second semiconductor layer, a second light emitting layer and a third semiconductor layer with the first conductive type, which are sequentially disposed.

12 . The light emitting diode device according to claim 11 , wherein,
in the first sub light emitting unit, the first light emitting layer and the second semiconductor layer partially cover the first semiconductor layer, a first electrode is disposed on an exposed portion of the first semiconductor layer, and a second electrode is disposed on the second semiconductor layer; and in the second sub light emitting unit, the second light emitting layer and the third semiconductor layer partially cover the second semiconductor layer, a fourth electrode is disposed on an exposed portion of the second semiconductor layer, and a third electrode is disposed on the third semiconductor layer.

13 . The light emitting diode device according to claim 12 , wherein,
each light emitting unit further comprises a third sub light emitting unit spaced apart from the first sub light emitting unit and the second light emitting unit, the third sub light emitting unit comprises the first semiconductor layer, the first light emitting layer, the second semiconductor layer, the second light emitting layer, the third semiconductor layer, a third light emitting layer and a fourth semiconductor layer with the second conductive type, which are sequentially disposed.

14 . The light emitting diode device according to claim 13 , wherein,
in the third sub light emitting unit, the third light emitting layer and the fourth semiconductor layer partially cover the third semiconductor layer, a fifth electrode is disposed on an exposed portion of the third semiconductor layer, and a sixth electrode is disposed on the fourth semiconductor layer.

15 . The light emitting diode device according to claim 12 , further comprising: a substrate, the substrate comprising a plurality of contact electrodes insulated from each other;
wherein, each light emitting unit is bonded to the substrate, and each light emitting unit is electrically connected with corresponding contact electrodes.

16 . The light emitting diode device according to claim 14 , further comprising: a substrate, the substrate comprising a plurality of contact electrodes insulated from each other;
wherein, each light emitting unit is bonded to the substrate, and each light emitting unit is electrically connected with corresponding contact electrodes.

17 . The light emitting diode device according to claim 11 , wherein, each l

Assignees

• Boe Technology Group Co Ltd
• Beijing Boe Optoelectronics Tech Co Ltd

Inventors

• Tian Ting
• Zhai Ming
• Dou Shuqian
• Zhou Dayong
• Cheng Jun
• Fu Xiaoliang
• Fan Zhiqiang
• Kang Taesung

Classifications

• H10W90/00

  Package configurations · CPC title

• H01L2933/0066

  Electricity · mapped topic

• H01L33/12

  Electricity · mapped topic

• H01L33/0095 Primary

  Electricity · mapped topic

• H01L33/30

  Electricity · mapped topic