Semiconductor device
US-2024421048-A1 · Dec 19, 2024 · US
Copper paste for joining, method for producing joined body, and method for producing semiconductor device
US2018250751A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018250751-A1 |
| Application number | US-201615757790-A |
| Country | US |
| Kind code | A1 |
| Filing date | Sep 7, 2016 |
| Priority date | Sep 7, 2015 |
| Publication date | Sep 6, 2018 |
| Grant date | — |
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Abstract
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Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 μm to 0.8 μm, and micro copper particles having a volume-average particle size of 2 μm to 50 μm, a sum of the amount of the sub-micro copper particles contained and the amount of the micro copper particles contained is 80% by mass or greater on the basis of a total mass of the metal particles, and the amount of the sub-micro copper particles contained is 30% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the micro copper particles.
First claim
Opening claim text (preview).
1 . Copper paste for joining, comprising: metal particles; and a dispersion medium, wherein the metal particles include sub-micro copper particles having a volume-average particle size of 0.12 μm to 0.8 μm, and micro copper particles having a volume-average particle size of 2 μm to 50 μm, a sum of the amount of the sub-micro copper particles contained and the amount of the micro copper particles contained is 80% by mass or greater on the basis of a total mass of the metal particles, and the amount of the sub-micro copper particles contained is 30% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the micro copper particles. 2 . The copper paste for joining according to claim 1 , wherein the micro copper particles have a flake shape. 3 . The copper paste for joining according to claim 1 , wherein the copper paste for joining is used without pressurization. 4 . A method for manufacturing a joined body, comprising: a process of preparing a laminated body in which a first member, and the copper paste for joining according to claim 1 and a second member that are disposed on a side whereon a weight of the first member acts, are laminated in this order; and sintering the copper paste for joining in a state of receiving the weight of the first member, or the weight of the first member and a pressure of 0.01 MPa or lower. 5 . A method for manufacturing a semiconductor device, comprising: a process of preparing a laminated body in which a first member, and the copper paste for joining according to claim 1 and a second member that are disposed on a side whereon a weight of the first member acts, are laminated in this order; and sintering the copper paste for joining in a state of receiving the weight of the first member, or the weight of the first member and a pressure of 0.01 MPa or lower, wherein at least one of the first member and the second member is a semiconductor element. 6 . A joined body, comprising: a first member; a second member; and a sintered body of the copper paste for joining according to claim 1 , the sintered body joining the first member and the second member. 7 . The joined body according to claim 6 , wherein at least one of the first member and the second member includes at least one metal selected from the group consisting of copper, nickel, silver, gold, and palladium on a surface that is in contact with the sintered body. 8 . A semiconductor device, comprising: a first member; a second member; and a sintered body of the copper paste for joining according to claim 1 , the sintered body joining the first member and the second member, wherein at least one of the first member and the second member is a semiconductor element. 9 . The copper paste for joining according to claim 2 , wherein the copper paste for joining is used without pressurization.
Assignees
Inventors
Classifications
between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
between laterally-adjacent chips · CPC title
between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
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- What does patent US2018250751A1 cover?
- Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 μm to 0.8 μm, and micro copper particles having a volume-average particle size of 2 μm to 50 μm, a sum of the amount of the sub-micro copper particles contained and the amount of the micro copper particles c…
- Who is the assignee on this patent?
- Hitachi Chemical Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10W70/417. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Sep 06 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).