Method of manufacturing a package-on-package type semiconductor package
US-10290621-B2 · May 14, 2019 · US
US2018233440A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018233440-A1 |
| Application number | US-201815911500-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 5, 2018 |
| Priority date | May 21, 2014 |
| Publication date | Aug 16, 2018 |
| Grant date | — |
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A reconstituted semiconductor package and a method of making a reconstituted semiconductor package are described. An array of die-attach substrates is formed onto a carrier. A semiconductor device is mounted onto a first surface of each of the die-attach substrates. An interposer substrate is mounted over each of the semiconductor devices. The interposer substrates are electrically connected to the first surface of the respective die-attach substrates. A molding compound is filled in open spaces within and between the interposer substrates mounted to their respective die-attach substrates to form an array of reconstituted semiconductor packages. Electrical connections are mounted to a second surface of the die-attach substrates. The array of reconstituted semiconductor packages is singulated through the molding compound between each of the die-attach substrates and respective mounted interposer substrates.
Opening claim text (preview).
1 . A reconstituted interposer package comprising: an interposer substrate electrically mounted to a first surface of a reconstituted die-attach substrate and straddling an integrated circuit mounted on the first surface of the reconstituted die-attach substrate; a molding compound filled within open spaces between the interposer substrate and the first surface of the reconstituted die-attach substrate, wherein singulated surfaces of the molding compound reside along edges of the interposer substrate and the reconstituted die-attach substrate; and external electrical connections formed in a grid array on a second surface of the reconstituted die-attach substrate. 2 . The reconstituted interposer package of claim 1 , wherein one or more of the reconstituted interposer packages are assembled into one of a baseband microprocessor, a set-top-box microprocessor, a server message block microprocessor, or an encryption/security microprocessor. 3 . The reconstituted semiconductor package of claim 1 , wherein the molding compound covers side walls of the reconstituted die-attach substrate and the interposer substrate. 4 . The reconstituted semiconductor package of claim 1 , wherein neither the reconstituted die-attach substrate nor the interposer substrate are traversed during singulation. 5 . The reconstituted semiconductor package of claim 1 , further comprising an interposer package-on-package. 6 . The reconstituted semiconductor package of claim 1 , wherein a size of the interposer substrate is different from a size of the reconstituted die-attach substrate. 7 . A reconstituted interposer package comprising: an interposer substrate electrically mounted to a first surface of a reconstituted die-attach substrate and straddling an integrated circuit mounted on the first surface of the reconstituted die-attach substrate; a molding compound filled within open spaces between the interposer substrate and the first surface of the reconstituted die-attach substrate; and electrical connections formed in a grid array on a second surface of the reconstituted die-attach substrate. 8 . The reconstituted semiconductor package of claim 7 , wherein the molding compound covers side walls of the reconstituted die-attach substrate and the interposer substrate. 9 . The reconstituted semiconductor package of claim 7 , wherein one or more of the reconstituted interposer packages are assembled into one of a baseband microprocessor, a set-top-box microprocessor, a server message block microprocessor, or an encryption/security microprocessor. 10 . The reconstituted semiconductor package of claim 7 , further comprising an interposer package-on-package. 11 . The reconstituted semiconductor package of claim 7 , wherein a size of the interposer substrate is different from a size of the reconstituted die-attach substrate. 12 . A method of forming a semiconductor package, comprising: forming an array of die-attach substrates; mounting a semiconductor device onto a first surface of each of the die-attach substrates; forming solder ball or conductor post connections to a plurality of interposer substrates; mounting each interposer substrate over a respective semiconductor device; electrically connecting the interposer substrates to the first surface of the respective die-attach substrates, via the solder ball or conductor post connections; filling a molding compound in open spaces within and between the interposer substrates mounted to their respective die-attach substrates to form an array of reconstituted semiconductor packages; mounting electrical connections to a second surface of the die-attach substrates; and singulating the array of reconstituted semiconductor packages through the molding compound between each of the die-attach substrates and respective mounted interposer substrates. 13 . The method of claim 12 , wherein the array of reconstituted semiconductor packages comprises a gap between each of the die-attach substrates and their respective mounted interposer substrates. 14 . The method of claim 13 , wherein the singulation does not cut through either the die-attach substrates or the mounted interposer substrates. 15 . The reconstituted semiconductor package of claim 13 , wherein the molding compound fills the gaps between each of the die-attach substrates and their respective mounted interposer substrates. 16 . The reconstituted semiconductor package of claim 12 , wherein the singulation cuts through the die-attach substrates. 17 . The reconstituted semiconductor package of claim 12 , wherein the singulation cuts through the interposer substrates. 18 . The method of claim 12 , further comprising: forming the array of die-attach substrates onto an adhesive tape carrier. 19 . The method of claim 18 , further comprising: exposing portions of the adhesive tape carrier through a solder mask to form a solder stencil. 20 . The method of claim 19 , further comprising: forming solder electrical connections within the exposed portions of the solder stencil.
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between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
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