Reconstituted interposer semiconductor package

US2018233440A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2018233440-A1
Application numberUS-201815911500-A
CountryUS
Kind codeA1
Filing dateMar 5, 2018
Priority dateMay 21, 2014
Publication dateAug 16, 2018
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A reconstituted semiconductor package and a method of making a reconstituted semiconductor package are described. An array of die-attach substrates is formed onto a carrier. A semiconductor device is mounted onto a first surface of each of the die-attach substrates. An interposer substrate is mounted over each of the semiconductor devices. The interposer substrates are electrically connected to the first surface of the respective die-attach substrates. A molding compound is filled in open spaces within and between the interposer substrates mounted to their respective die-attach substrates to form an array of reconstituted semiconductor packages. Electrical connections are mounted to a second surface of the die-attach substrates. The array of reconstituted semiconductor packages is singulated through the molding compound between each of the die-attach substrates and respective mounted interposer substrates.

First claim

Opening claim text (preview).

1 . A reconstituted interposer package comprising: an interposer substrate electrically mounted to a first surface of a reconstituted die-attach substrate and straddling an integrated circuit mounted on the first surface of the reconstituted die-attach substrate; a molding compound filled within open spaces between the interposer substrate and the first surface of the reconstituted die-attach substrate, wherein singulated surfaces of the molding compound reside along edges of the interposer substrate and the reconstituted die-attach substrate; and external electrical connections formed in a grid array on a second surface of the reconstituted die-attach substrate. 2 . The reconstituted interposer package of claim 1 , wherein one or more of the reconstituted interposer packages are assembled into one of a baseband microprocessor, a set-top-box microprocessor, a server message block microprocessor, or an encryption/security microprocessor. 3 . The reconstituted semiconductor package of claim 1 , wherein the molding compound covers side walls of the reconstituted die-attach substrate and the interposer substrate. 4 . The reconstituted semiconductor package of claim 1 , wherein neither the reconstituted die-attach substrate nor the interposer substrate are traversed during singulation. 5 . The reconstituted semiconductor package of claim 1 , further comprising an interposer package-on-package. 6 . The reconstituted semiconductor package of claim 1 , wherein a size of the interposer substrate is different from a size of the reconstituted die-attach substrate. 7 . A reconstituted interposer package comprising: an interposer substrate electrically mounted to a first surface of a reconstituted die-attach substrate and straddling an integrated circuit mounted on the first surface of the reconstituted die-attach substrate; a molding compound filled within open spaces between the interposer substrate and the first surface of the reconstituted die-attach substrate; and electrical connections formed in a grid array on a second surface of the reconstituted die-attach substrate. 8 . The reconstituted semiconductor package of claim 7 , wherein the molding compound covers side walls of the reconstituted die-attach substrate and the interposer substrate. 9 . The reconstituted semiconductor package of claim 7 , wherein one or more of the reconstituted interposer packages are assembled into one of a baseband microprocessor, a set-top-box microprocessor, a server message block microprocessor, or an encryption/security microprocessor. 10 . The reconstituted semiconductor package of claim 7 , further comprising an interposer package-on-package. 11 . The reconstituted semiconductor package of claim 7 , wherein a size of the interposer substrate is different from a size of the reconstituted die-attach substrate. 12 . A method of forming a semiconductor package, comprising: forming an array of die-attach substrates; mounting a semiconductor device onto a first surface of each of the die-attach substrates; forming solder ball or conductor post connections to a plurality of interposer substrates; mounting each interposer substrate over a respective semiconductor device; electrically connecting the interposer substrates to the first surface of the respective die-attach substrates, via the solder ball or conductor post connections; filling a molding compound in open spaces within and between the interposer substrates mounted to their respective die-attach substrates to form an array of reconstituted semiconductor packages; mounting electrical connections to a second surface of the die-attach substrates; and singulating the array of reconstituted semiconductor packages through the molding compound between each of the die-attach substrates and respective mounted interposer substrates. 13 . The method of claim 12 , wherein the array of reconstituted semiconductor packages comprises a gap between each of the die-attach substrates and their respective mounted interposer substrates. 14 . The method of claim 13 , wherein the singulation does not cut through either the die-attach substrates or the mounted interposer substrates. 15 . The reconstituted semiconductor package of claim 13 , wherein the molding compound fills the gaps between each of the die-attach substrates and their respective mounted interposer substrates. 16 . The reconstituted semiconductor package of claim 12 , wherein the singulation cuts through the die-attach substrates. 17 . The reconstituted semiconductor package of claim 12 , wherein the singulation cuts through the interposer substrates. 18 . The method of claim 12 , further comprising: forming the array of die-attach substrates onto an adhesive tape carrier. 19 . The method of claim 18 , further comprising: exposing portions of the adhesive tape carrier through a solder mask to form a solder stencil. 20 . The method of claim 19 , further comprising: forming solder electrical connections within the exposed portions of the solder stencil.

Assignees

Inventors

Classifications

  • Cutting or separating of wafers, substrates or parts of devices · CPC title

  • between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

  • between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

  • between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

  • between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

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What does patent US2018233440A1 cover?
A reconstituted semiconductor package and a method of making a reconstituted semiconductor package are described. An array of die-attach substrates is formed onto a carrier. A semiconductor device is mounted onto a first surface of each of the die-attach substrates. An interposer substrate is mounted over each of the semiconductor devices. The interposer substrates are electrically connected to…
Who is the assignee on this patent?
Avago Technologies General Ip
What technology area does this patent fall under?
Primary CPC classification H10W90/701. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Aug 16 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).