Method for manufacturing semiconductor device, substrate-processing apparatus, and recording medium

Patent metadata

Field	Value
Publication number	US-2018233351-A1
Application number	US-201815950879-A
Country	US
Kind code	A1
Filing date	Apr 11, 2018
Priority date	Jun 25, 2014
Publication date	Aug 16, 2018
Grant date	—

Abstract

There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.

First claim

What is claimed is:

1 . A method for manufacturing a semiconductor device, comprising:
preparing a substrate with an oxide film formed on a surface of the substrate; performing a pre-processing to form a nitride layer containing oxygen and carbon on a surface of the oxide film by using the oxide film as an oxygen source, and by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate;
supplying a carbon-containing gas to the substrate; and
supplying a nitrogen-containing gas to the substrate, or
by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate; and
supplying a gas containing carbon and nitrogen to the substrate, or
by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas containing carbon to the substrate; and
supplying a nitrogen-containing gas to the substrate; and
forming a nitride film containing carbon on the surface of the oxide film on which the pre-processing has been performed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate;
supplying a carbon-containing gas to the substrate; and
supplying a nitrogen-containing gas to the substrate, or
by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate; and
supplying a gas containing carbon and nitrogen to the substrate, or
by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas containing carbon to the substrate; and
supplying a nitrogen-containing gas to the substrate.

2 . The method of claim 1 , wherein the act of performing the pre-processing and the act of forming the nitride film containing carbon are performed in a state where the substrate is accommodated in a process chamber, and
wherein the method further comprises forming a cap layer on a surface of the nitride film containing carbon in the same process chamber, after the act of forming the nitride film containing carbon.

3 . The method of claim 1 , wherein a thickness of the nitride film containing carbon is equal to or greater than 0.2 nm, and is equal to or smaller than 10 nm.

4 . The method of claim 1 , wherein a concentration of carbon in the nitride film containing carbon is equal to or higher than 3 atomic %, and is equal to or lower than 10 atomic %.

5 . The method of claim 1 , further comprising performing an etching process to the substrate on which the nitride film containing carbon is formed.

6 . The method of claim 1 , wherein a concave portion is formed in the surface of the substrate, and the oxide film is formed on an inner surface of the concave portion,
wherein, in the act of forming the nitride film containing carbon, the nitride film containing carbon is formed to fill an interior of the concave portion in which the oxide film is formed, and wherein the method further comprises, after the act of forming the nitride film containing carbon, heat-processing the substrate under a temperature higher than a temperature of the substrate in the act of forming the nitride film containing carbon.

7 . A substrate-processing apparatus, comprising:
a process chamber in which a substrate is processed; a supply system configured to supply gases to the substrate in the process chamber; and a controller configured to control the supply system so as to:
after the substrate with an oxide film formed on a surface of the substrate is prepared, perform a pre-processing to form a nitride layer containing oxygen and carbon on a surface of the oxide film by using the oxide film as an oxygen source, and by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate;
supplying a carbon-containing gas to the substrate; and
supplying a nitrogen-containing gas to the substrate, or

by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate; and
supplying a gas containing carbon and nitrogen to the substrate, or

by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas containing carbon to the substrate; and
supplying a nitrogen-containing gas to the substrate; and

form a nitride film containing carbon on the surface of the oxide film on which the pre-processing has been performed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate;
supplying a carbon-containing gas to the substrate; and
supplying a nitrogen-containing gas to the substrate, or

by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate; and
supplying a gas containing carbon and nitrogen to the substrate, or

by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas containing carbon to the substrate; and
supplying a nitrogen-containing gas to the substrate.

8 . A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform, in a process chamber of the substrate processing apparatus, a process of:
preparing a substrate with an oxide film formed on a surface of the substrate; performing a pre-processing to form a nitride layer containing oxygen and carbon on a surface of the oxide film by using the oxide film as an oxygen source, and by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate;
supplying a carbon-containing gas to the substrate; and
supplying a nitrogen-containing gas to the substrate, or
by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate; and
supplying a gas containing carbon and nitrogen to the substrate, or
by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas containing carbon to the substrate; and
supplying a nitrogen-containing gas to the substrate; and
forming a nitride film containing carbon on the surface of the oxide film on which the pre-processing has been performed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate;
supplying a carbon-containing gas to the substrate; and
supplying a nitrogen-containing gas to the substrate, or
by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate; and
supplying a gas containing carbon and nitrogen to the substrate, or
by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas containing carbon to the substrate; and
supplying a nitrogen-containing gas to the substrate.

Assignees

• Hitachi Int Electric Inc

Inventors

• Nakamura Yoshinobu
• Maeda Kiyohiko
• Hirose Yoshiro
• HORIIKE Ryota
• Hashimoto Yoshitomo

Classifications

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/642

  Chemical etching · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title